CLA30E1200PC-TUB

CLA30E1200PC High Efficiency Thyristor VRRM = 1200 V I TAV = 30 A VT = 1.27 V Single Thyristor Part number CLA30E1200PC Marking on Product: CLA30E1200PC Backside: anode 4/2 1 3 Features / Advantages: Applications: Package: TO-263 (D2Pak) ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212f CLA30E1200PC Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1200 I R/D reverse current, drain current VT forward voltage drop TVJ = 25°C 10 µA 2 mA TVJ = 25°C 1.30 V 1.59 V 1.27 V IT = 30 A IT = 60 A IT = 30 A IT = 60 A I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 °C for power loss calculation only thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing V TVJ = 125°C TC = 115 °C RthCH max. Unit 1300 V VR/D = 1200 V average forward current Ptot typ. VR/D = 1200 V I TAV I²t min. 1.65 V T VJ = 150 °C 30 A 47 A TVJ = 150 °C 0.86 V 13.2 mΩ 0.5 K/W 0.25 K/W TC = 25°C 250 W t = 10 ms; (50 Hz), sine TVJ = 45°C 300 A t = 8,3 ms; (60 Hz), sine VR = 0 V 325 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 255 A t = 8,3 ms; (60 Hz), sine VR = 0 V 275 A t = 10 ms; (50 Hz), sine TVJ = 45°C 450 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 440 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 325 A²s 315 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 13 t P = 300 µs PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = t P = 200 µs; di G /dt = 0.3 A/µs; 90 A IG = 30 A (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage I GT gate trigger current VGD gate non-trigger voltage I GD gate non-trigger current IL latching current 0.3 A; V = ⅔ VDRM non-repet., I T = pF 10 W 5 W 0.5 W 150 A/µs 500 A/µs TVJ = 150°C 500 V/µs VD = 6 V TVJ = 25 °C 1.3 TVJ = -40 °C 1.6 V VD = 6 V TVJ = 25 °C 30 mA TVJ = -40 °C 50 mA TVJ = 150°C 0.2 V 1 mA TVJ = 25 °C 90 mA R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs IG = 0.3 A; di G /dt = V 0.3 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 60 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.3 A; di G /dt = VR = 100 V; I T = 0.3 A/µs 30A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20190212f CLA30E1200PC Package Ratings TO-263 (D2Pak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 35 Unit A -40 150 °C -40 125 °C 150 °C 1.5 Weight FC 20 mounting force with clip Product Marking C L A 30 E 1200 PC IXYS yywwZ Logo Date Code Location 60 N Part description XXXXXXXXX Part Number g = = = = = = = Thyristor (SCR) High Efficiency Thyristor (up to 1200V) Current Rating [A] Single Thyristor Reverse Voltage [V] TO-263AB (D2Pak) (2) 123456 Lot# Ordering Standard Alternative Ordering Number CLA30E1200PC-TRL CLA30E1200PC-TUB Similar Part CLA30E1200PB CLA30E1200HB CS22-12io1M CS22-08io1M Package TO-220AB (3) TO-247AD (3) TO-220ABFP (3) TO-220ABFP (3) CMA30E1600PN CMA30E1600PB TO-220ABFP (3) TO-220AB (3) Equivalent Circuits for Simulation I V0 R0 * on die level Delivery Mode Tape & Reel Tube Quantity 800 50 Code No. 508235 523595 Voltage class 1200 1200 1200 800 1600 1600 T VJ = 150°C Thyristor V 0 max threshold voltage 0.86 R0 max slope resistance * 10 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Marking on Product CLA30E1200PC CLA30E1200PC V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20190212f CLA30E1200PC Outlines TO-263 (D2Pak) Dim. W A A1 H D E Supplier Option D1 L1 c2 4 L L2 1 2 3 c 2x e 3x b2 10.92 (0.430) mm (Inches) 2x b E1 9.02 (0.355) W Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.098 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.5 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 4/2 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212f CLA30E1200PC Thyristor 60 280 50 1000 50 Hz, 80% VRRM VR = 0 V 240 40 IT TVJ = 45°C ITSM 200 2 It TVJ = 45°C 30 [A] [A] 160 20 [A2s] TVJ = 125°C TVJ = 150°C 125°C 10 TVJ = 125°C 100 120 TVJ = 25°C 0 0,5 1,0 1,5 80 0,001 2,0 0,01 VT [V] B IGT: TVJ = 25°C 2 [V] 1 3 4 5 6 7 8 910 t [ms] Fig. 3 I t versus time (1-10 s) 40 C IGT: TVJ = -40°C IGT: TVJ = 0°C B 2 2 102 B VG 1 Fig. 2 Surge overload current ITSM: crest value, t: duration IGD: TVJ = 125°C 3 1 t [s] Fig. 1 Forward characteristics 4 0,1 30 TVJ = 125°C 101 tgd IT(AV)M [µs] [A] dc = 1 0.5 0.4 0.33 0.17 0.08 20 lim. 100 10 IGD: TVJ = 25°C typ. A 10-1 10-2 0 0 25 50 75 10-1 100 0 101 0 40 IG [A] IG [mA] Fig. 4 Gate voltage & gate current Fig. 5 Gate controlled delay time tgd Triggering: A = no; B = possible; C = safe 60 80 120 160 Tcase [°C] Fig. 6 Max. forward current at case temperature 0,6 dc = 1 0.5 0.4 0.33 0.17 0.08 50 40 P(AV) RthHA 0.6 0.8 1.0 2.0 4.0 8.0 0,5 0,4 ZthJC 30 0,3 [W] i Rthi (K/W) 1 0.08 2 0.06 3 0.2 4 0.05 5 0.11 [K/W] 20 0,2 10 0,1 0 ti (s) 0.01 0.001 0.02 0.2 0.11 0,0 0 10 20 30 40 0 IT(AV) [A] 50 100 150 Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Tamb [°C] Fig. 7 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20190212f