CLA30MT1200NPB

CLA30MT1200NPB High Efficiency Thyristor VRRM = 1200 V I TAV = 15 A VT = 1.35 V Three Quadrants operation: QI - QIII 1~ Triac Part number CLA30MT1200NPB Backside: anode/cathode Three Quadrants Operation T2 Positive Half Cycle + (-) IGT T2 (+) IGT T1 REF IGT - 4 T2 T1 QII QI QIII QIV REF + IGT (-) IGT 3 1 T1 REF Negative Half Cycle Note: All Polarities are referenced to T1 Features / Advantages: Applications: Package: TO-220 ● Triac for line frequency ● Three Quadrants Operation - QI - QIII ● Planar passivated chip ● Long-term stability of blocking currents and voltages ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● High creepage distance between terminals Disclaimer Notice Information furnished is believed to be accurate and reliable. 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IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200121c CLA30MT1200NPB Ratings Rectifier Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C I R/D reverse current, drain current VT forward voltage drop 10 µA 1.5 mA TVJ = 25°C 1.35 V 1.68 V 1.35 V IT = 15 A IT = 30 A IT = 15 A IT = 30 A I RMS 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 °C for power loss calculation only total power dissipation I TSM max. forward surge current value for fusing V TVJ = 25°C RMS forward current per phase thermal resistance case to heatsink 1200 TVJ = 125°C TC = 120 °C RthCH max. Unit 1300 V VR/D = 1200 V average forward current Ptot typ. VR/D = 1200 V I TAV I²t min. 1.79 V T VJ = 150 °C 15 A 33 A TVJ = 150 °C 0.89 V 30 mΩ 0.95 K/W 0.5 K/W TC = 25°C 130 W t = 10 ms; (50 Hz), sine TVJ = 45°C 170 A t = 8,3 ms; (60 Hz), sine VR = 0 V 185 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 145 A t = 8,3 ms; (60 Hz), sine VR = 0 V 155 A t = 10 ms; (50 Hz), sine TVJ = 45°C 145 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 140 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 105 A²s 100 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 9 t P = 300 µs PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = t P = 200 µs; di G /dt = 0.3 A/µs; 45 A IG = 15 A (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage I GT gate trigger current VGD gate non-trigger voltage I GD gate non-trigger current IL latching current 0.3 A; V = ⅔ VDRM non-repet., I T = pF 5 W 1 W 0.2 W 150 A/µs 500 A/µs TVJ = 150°C 500 V/µs VD = 6 V TVJ = 25 °C 1.3 TVJ = -40 °C 1.6 V VD = 6 V TVJ = 25 °C ± 40 mA TVJ = -40 °C ± 60 mA TVJ = 150°C 0.2 V ±1 mA TVJ = 25 °C 70 mA R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs IG = 0.3 A; di G /dt = V 0.3 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 50 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.3 A; di G /dt = VR = 100 V; I T = 0.3 A/µs 15A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20200121c CLA30MT1200NPB Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 35 Unit A -40 150 °C -40 125 °C 150 °C 2 Weight MD mounting torque FC mounting force with clip Product Marking Part Number Logo Date Code Lot # g 0.4 0.6 Nm 20 60 N Part description C L A 30 MT 1200 N PB XXXXXX = = = = = = = = Thyristor (SCR) High Efficiency Thyristor (up to 1200V) Current Rating [A] 1~ Triac Reverse Voltage [V] Three Quadrants operation: QI - QIII TO-220AB (3) yywwZ 123456 Location Ordering Standard Ordering Number CLA30MT1200NPB Similar Part CLA30MT1200NPZ Equivalent Circuits for Simulation I V0 R0 Package TO-263AB (D2Pak) (2HV) * on die level Delivery Mode Tube Quantity 50 Code No. 517031 Voltage class 1200 T VJ = 150°C Thyristor V 0 max threshold voltage 0.89 R0 max slope resistance * 27 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Marking on Product CLA30MT1200NPB V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20200121c CLA30MT1200NPB Outlines TO-220 A = supplier option H1 ØP D 4 3 L 3x b2 2 L1 1 3x b 2x e Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 2.54 5.85 10.66 BSC 6.85 0.390 0.100 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A1 Q E Dim. C A2 4 3 1 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200121c CLA30MT1200NPB Thyristor 50 140 TVJ = 125°C 40 1000 50 Hz, 80% VRRM TVJ = 150°C VR = 0 V 120 ITSM IT 30 2 It TVJ = 45°C 100 [A] 20 TVJ = 45°C 100 [A] 2 [A s] TVJ = 125°C 80 10 TVJ = 125°C TVJ = 25°C 0 0,5 60 1,0 1,5 2,0 10 2,5 0,01 0,1 VT [V] Fig. 1 Forward characteristics 4 1 IGD: TVJ = -40°C IGD: TVJ = 25°C 2 [V] IGD: TVJ = 0°C B B 2 3 4 5 6 7 8 910 t [s] t [ms] Fig. 2 Surge overload current Fig. 3 I t versus time (1-10 ms) 2 40 dc = 1 0.5 0.4 0.33 0.17 0.08 C B VG 1 1000 IGD: TVJ = 125°C 3 1 30 100 typ. tgd IT(AV)M Limit 20 [µs] [A] 10 TVJ = 125°C 10 IGD: TVJ = 25°C A 1 10 0 0 25 50 75 0 100 20 50 75 100 125 150 175 Fig. 6 Max. forward current at case temperature 1,0 dc = 1 0.5 0.4 0.33 0.17 0.08 P(AV) 25 TC [°C] Fig. 5 Gate controlled delay time Fig. 4 Gate trigger characteristics 25 0 IG [mA] IG [mA] 30 1000 RthHA 0.4 0.6 0.8 1.0 2.0 4.0 0,8 ZthJC 0,6 15 [K/W] [W] 0,4 Rthi [K/W] t i [s] 0.120 0.0100 0.100 0.220 0.0011 0.0250 0.245 0.265 0.3200 0.0900 10 0,2 5 0 0 10 IT(AV) [A] 0 50 100 0,0 100 150 Tamb [°C] © 2020 IXYS all rights reserved 102 103 104 t [ms] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. 101 Fig. 8 Transient thermal impedance Data according to IEC 60747and per semiconductor unless otherwise specified 20200121c