CLA50E1200TC

CLA50E1200TC High Efficiency Thyristor VRRM = 1200 V I TAV = 50 A VT = 1,27 V Single Thyristor Part number CLA50E1200TC Marking on Product: CLA50E1200TC Backside: anode 2 1 3 Features / Advantages: Applications: Package: TO-268AA (D3Pak) ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212d CLA50E1200TC Ratings Thyristor Conditions Definition min. typ. max. Unit 1300 V Symbol VRSM/DSM max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1200 I R/D reverse current, drain current VR/D = 1200 V TVJ = 25°C 50 µA VR/D = 1200 V TVJ = 125 °C 4 mA TVJ = 25°C 1,32 V 1,60 V 1,27 V VT IT = forward voltage drop 50 A I T = 100 A IT = TVJ = 125 °C 50 A I T = 100 A I TAV average forward current TC = 125 °C 180° sine I T(RMS) RMS forward current VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only RthCH thermal resistance case to heatsink Ptot total power dissipation I TSM max. forward surge current I²t value for fusing V 1,65 V T VJ = 150 °C 50 A 79 A TVJ = 150 °C 0,88 V 7,7 mΩ 0,25 K/W 0,15 K/W TC = 25°C 500 W t = 10 ms; (50 Hz), sine TVJ = 45°C 650 A t = 8,3 ms; (60 Hz), sine VR = 0 V 700 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 555 A A t = 8,3 ms; (60 Hz), sine VR = 0 V 595 t = 10 ms; (50 Hz), sine TVJ = 45°C 2,12 kA²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 2,04 kA²s TVJ = 150 °C 1,54 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 1,48 kA²s 25 t P = 300 µs pF 10 W 5 W 0,5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = 150 A t P = 200 µs; di G /dt = 0,3 A/µs; (dv/dt) cr critical rate of rise of voltage VD = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C 1,5 TVJ = -40 °C 1,6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 50 mA TVJ = -40 °C 80 mA TVJ = 150°C 0,2 V 3 mA TVJ = 25 °C 125 mA IG = 0,3 A; VD = ⅔ VDRM non-repet., I T = 150 A/µs 50 A 500 A/µs TVJ = 150°C 1000 V/µs R GK = ∞; method 1 (linear voltage rise) VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = ⅔ VDRM tp = 10 µs IG = 0,3 A; di G /dt = V 0,3 A/µs IH holding current VD = 6 V RGK = ∞ TVJ = 25 °C 100 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0,3 A; di G /dt = VR = 100 V; I T = 0,3 A/µs 50A; VD = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 200 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20190212d CLA50E1200TC Package Ratings TO-268AA (D3Pak) Symbol I RMS Definition Conditions RMS current per terminal TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 min. typ. max. 70 Unit A -40 150 °C -40 125 °C 150 °C 5 Weight FC 20 mounting force with clip Product Marking C L A 50 E 1200 TC Part No. Date Code Assembly Line 120 N Part description IXYS Logo + ESD g = = = = = = = Thyristor (SCR) High Efficiency Thyristor (up to 1200V) Current Rating [A] Single Thyristor Reverse Voltage [V] TO-268AA (D3Pak) (2) yywwL 123456 Assembly Code Ordering Standard Alternative Ordering Number CLA50E1200TC-TUB CLA50E1200TC-TRL Similar Part CLA50E1200HB Equivalent Circuits for Simulation I V0 R0 Marking on Product CLA50E1200TC CLA50E1200TC Package TO-247AD (3) * on die level Delivery Mode Tube Tape & Reel Code No. 502708 502737 Voltage class 1200 T VJ = 150°C Thyristor V 0 max threshold voltage 0,88 V R0 max slope resistance * 5,2 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 30 400 Data according to IEC 60747and per semiconductor unless otherwise specified 20190212d CLA50E1200TC Outlines TO-268AA (D3Pak) Dim. A A1 A2 b b2 C C2 D D1 E E1 e H L L1 L2 L3 L4 2 Millimeter min max 4.90 5.10 2.70 2.90 0.02 0.25 1.15 1.45 1.90 2.10 0.40 0.65 1.45 1.60 13.80 14.00 12.40 12.70 15.85 16.05 13.30 13.60 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches min max 0.193 0.201 0.106 0.114 0.001 0.100 0.045 0.057 0.075 0.083 0.016 0.026 0.057 0.063 0.543 0.551 0.488 0.500 0.624 0.632 0.524 0.535 0.215 BSC 0.736 0.752 0.094 0.106 0.047 0.055 0.039 0.045 0.100 BSC 0.150 0.161 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212d CLA50E1200TC Thyristor 150 10000 600 VR = 0 V 50 Hz, 80% VRRM 120 500 90 400 IT TVJ = 45°C 2 ITSM 60 1000 TVJ = 125°C 300 [A] TVJ = 45°C It [A2s] TVJ = 125°C [A] TVJ = 125°C 30 200 TVJ = 25°C 0 0.0 100 0.5 1.0 1.5 2.0 100 2.5 0.01 0.1 VT [V] 1 1 t [s] Fig. 3 I t versus time (1-10 s) 80 1: IGD, TVJ = 150°C 70 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 6 4 5 60 TVJ = 125°C 100 23 1 dc = 1 0.5 0.4 0.33 0.17 0.08 50 tgd IT(AV)M [µs] [A] 40 1 [V] 10 lim. 100 1000 10000 10 typ. 1 10 0.1 10 30 20 4: PGAV = 0.5 W 5: PGM = 1 W 6: PGM = 10 W 1 4 5 6 7 8 910 t [ms] 1000 10 3 2 Fig. 2 Surge overload current ITSM: crest value, t: duration Fig. 1 Forward characteristics VG 2 0 100 1000 0 40 IG [mA] IG [mA] Fig. 4 Gate voltage & gate current Fig. 5 Gate controlled delay time tgd 100 80 120 160 Tcase [°C] Fig. 6 Max. forward current at case temperature 0.3 RthHA 0.4 0.6 0.8 1.0 2.0 4.0 dc = 1 0.5 0.4 0.33 0.17 0.08 80 P(AV) 60 [W] 0.2 ZthJC 0.1 i Rthi (K/W) 1 0.0075 2 0.0170 3 0.0570 4 0.1580 5 0.0105 [K/W] 40 0.0 20 ti (s) 0.0011 0.0019 0.0115 0.1200 0.5000 0 0 20 40 60 IT(AV) [A] 0 50 100 150 Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 0.001 0.01 0.1 1 10 t [s] Tamb [°C] Fig. 7 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20190212d