CLA5E1200UC-TRL

CLA5E1200UC High Efficiency Thyristor VRRM = 1200 V I TAV = 5A VT = 1.31 V Single Thyristor Part number CLA5E1200UC Marking on Product: C5TLUE Backside: anode 2 1 3 Features / Advantages: Applications: Package: TO-252 (DPak) ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212d CLA5E1200UC Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1200 I R/D reverse current, drain current VT forward voltage drop TVJ = 25°C 10 µA 1 mA IT = 5A TVJ = 25°C 1.33 V IT = 10 A 1.62 V IT = 5A 1.31 V IT = 10 A I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 °C for power loss calculation only thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing V TVJ = 125°C TC = 135 °C RthCH max. Unit 1300 V VR/D = 1200 V average forward current Ptot typ. VR/D = 1200 V I TAV I²t min. 1.72 V T VJ = 150 °C 5 A 7.8 A TVJ = 150 °C 0.89 V 85 mΩ 1.5 K/W K/W 0.50 TC = 25°C 85 W t = 10 ms; (50 Hz), sine TVJ = 45°C 70 A t = 8,3 ms; (60 Hz), sine VR = 0 V 76 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 60 A t = 8,3 ms; (60 Hz), sine VR = 0 V 64 A t = 10 ms; (50 Hz), sine TVJ = 45°C 25 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 24 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 18 A²s 17 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C µs tP = PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = t P = 200 µs; di G /dt = 0.1 A/µs; (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage I GT gate trigger current VGD gate non-trigger voltage I GD gate non-trigger current IL latching current IG = 2 0.1 A; V = ⅔ VDRM non-repet., I T = 10 A pF 5 W 2.5 W 0.25 W 150 A/µs 5A 500 A/µs TVJ = 150°C 500 V/µs VD = 6 V TVJ = 25 °C 1.8 TVJ = -40 °C 1.9 V VD = 6 V TVJ = 25 °C 30 mA TVJ = -40 °C 50 mA TVJ = 150°C 0.2 V 1 mA TVJ = 25 °C 45 mA R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs IG = 0.1 A; di G /dt = V 0.1 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 30 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.1 A; di G /dt = VR = 100 V; I T = 0.1 A/µs 5 A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20190212d CLA5E1200UC Package Ratings TO-252 (DPak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 20 Unit A -40 150 °C -40 125 °C 150 °C 0.3 Weight FC typ. 20 mounting force with clip Product Marking Logo Part number Assembly Line 60 N Part description C L A 5 E 1200 UC IXYS abcdefg Z YY g = = = = = = = Thyristor (SCR) High Efficiency Thyristor (up to 1200V) Current Rating [A] Single Thyristor Reverse Voltage [V] TO-252AA (DPak) WW Date Code Ordering Standard Alternative Ordering Number CLA5E1200UC-TRL CLA5E1200UC-TUB Similar Part CLA5E1200PZ Equivalent Circuits for Simulation I V0 R0 Package TO-263AB (D2Pak) (2HV) * on die level Delivery Mode Tape & Reel Tube Quantity 2500 70 Code No. 509799 523428 Voltage class 1200 T VJ = 150 °C Thyristor V 0 max threshold voltage 0.89 R0 max slope resistance * 82 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Marking on Product C5TLUE C5TLUE V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20190212d CLA5E1200UC Outlines TO-252 (DPak) 2 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212d CLA5E1200UC Thyristor 20 100 100 VR = 0 V 50 Hz, 80% VRRM TVJ = 150°C TVJ = 125°C 15 IT ITSM 10 50 [A] TVJ = 45°C 2 It 10 TVJ = 45°C [A] TVJ = 125°C [A2s] TVJ = 125°C 5 0 0,0 TVJ = 25°C 0,5 1,0 1,5 2,0 0 2,5 1 3,0 0,01 0,1 VT [V] 1 1 2 t [s] t [ms] Fig. 3 I t versus time (1-10 s) 1000 10 4 5 6 7 8 910 2 Fig. 2 Surge overload current ITSM: crest value, t: duration Fig. 1 Forward characteristics 3 25 1: IGD, TVJ = 150°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C TVJ = 125°C 100 23 VG 5 6 1 15 [A] 10 [µs] 10 4 4: PGAV = 0.25 W 5: PGM = 2.5 W 6: PGM = 5W 5 lim. 10 100 1000 typ. 1 10 0,1 1 10000 0 100 1000 0 40 IG [mA] IG [mA] Fig. 4 Gate voltage & gate current 80 120 160 Tcase [°C] Fig. 5 Gate controlled delay time tgd 10 Fig. 6 Max. forward current at case temperature 1,6 dc = 1 0.5 0.4 0.33 0.17 0.08 8 P(AV) 6 [W] IT(AV)M tgd 1 [V] dc = 1 0.5 0.4 0.33 0.17 0.08 20 1,2 ZthJC 0,8 RthHA 1.0 2.0 4.0 8.0 12.0 16.0 4 2 i Rthi (K/W) 1 0.120 2 0.110 3 0.500 4 0.180 5 0.590 [K/W] 0,4 0 ti (s) 0.0100 0.0001 0.0025 0.0550 0.0250 0,0 0 2 4 6 IT(AV) [A] 0 50 100 150 Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Tamb [°C] Fig. 7 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20190212d