CLA60MT1200NHB

CLA60MT1200NHB High Efficiency Thyristor VRRM = 1200 V I TAV = 30 A VT = 1.25 V Three Quadrants operation: QI - QIII 1~ Triac Part number CLA60MT1200NHB Backside: Terminal 2 Three Quadrants Operation T2 Positive Half Cycle + (-) IGT T2 (+) IGT T1 REF IGT - 2 T2 T1 QII QI QIII QIV REF + IGT (-) IGT 3 1 T1 REF Negative Half Cycle Note: All Polarities are referenced to T1 Features / Advantages: Applications: Package: TO-247 ● Triac for line frequency ● Three Quadrants Operation - QI - QIII ● Planar passivated chip ● Long-term stability of blocking currents and voltages ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200121e CLA60MT1200NHB Ratings Rectifier Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1200 I R/D reverse current, drain current VT forward voltage drop TVJ = 25°C 10 µA 2 mA TVJ = 25°C 1.28 V 1.56 V 1.25 V IT = 30 A IT = 60 A IT = 30 A IT = 60 A I RMS RMS forward current per phase 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 °C for power loss calculation only thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing V TVJ = 125°C TC = 120 °C RthCH max. Unit 1300 V VR/D = 1200 V average forward current Ptot typ. VR/D = 1200 V I TAV I²t min. 1.61 V T VJ = 150 °C 30 A 66 A TVJ = 150 °C 0.86 V 12.5 mΩ 0.55 K/W 0.3 K/W TC = 25°C 230 W t = 10 ms; (50 Hz), sine TVJ = 45°C 380 A t = 8,3 ms; (60 Hz), sine VR = 0 V 410 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 325 A t = 8,3 ms; (60 Hz), sine VR = 0 V 350 A t = 10 ms; (50 Hz), sine TVJ = 45°C 720 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 700 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 530 A²s 510 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 25 t P = 300 µs PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = t P = 200 µs; di G /dt = 0.3 A/µs; 90 A IG = 30 A (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage I GT gate trigger current VGD gate non-trigger voltage I GD gate non-trigger current IL latching current 0.3 A; V = ⅔ VDRM non-repet., I T = pF 10 W 5 W 0.5 W 150 A/µs 500 A/µs TVJ = 150°C 500 V/µs VD = 6 V TVJ = 25 °C 1.7 TVJ = -40 °C 1.9 V VD = 6 V TVJ = 25 °C ± 60 mA TVJ = -40 °C ± 80 mA TVJ = 150°C 0.2 V ±1 mA TVJ = 25 °C 90 mA R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs IG = 0.3 A; di G /dt = V 0.3 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 60 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.3 A; di G /dt = VR = 100 V; I T = 0.3 A/µs 30A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20200121e CLA60MT1200NHB Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 70 Unit A -40 150 °C -40 125 °C 150 °C 6 Weight MD mounting torque FC mounting force with clip Product Marking C L A 60 MT 1200 N HB XXXXXXXXX Date Code 0.8 1.2 Nm 20 120 N Part description IXYS Logo Part Number g = = = = = = = = Thyristor (SCR) High Efficiency Thyristor (up to 1200V) Current Rating [A] 1~ Triac Reverse Voltage [V] Three Quadrants operation: QI - QIII TO-247AD (3) yywwZ 1234 Lot# Location Ordering Standard Ordering Number CLA60MT1200NHB Similar Part CLA60MT1200NHR CLA60MT1200NTZ Equivalent Circuits for Simulation I V0 R0 Package ISO247 (3) TO-268AA (D3Pak) (2HV) * on die level Delivery Mode Tube Quantity 30 Code No. 512073 Voltage class 1200 1200 T VJ = 150°C Thyristor V 0 max threshold voltage 0.86 R0 max slope resistance * 10 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Marking on Product CLA60MT1200NHB V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20200121e CLA60MT1200NHB Outlines TO-247 A E A2 Ø P1 ØP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 3x b b4 C A1 2x e Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 2 3 1 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200121e CLA60MT1200NHB Thyristor 60 400 1000 VR = 0 V 50 40 300 IT ITSM TVJ = 45°C 30 [A] [A] 20 TVJ = 45°C 2 It [A2s] TVJ = 125°C 200 TVJ = 125°C TVJ = 125°C 10 TVJ = 150°C 0 0,0 TVJ = 25°C 0,5 1,0 1,5 50 Hz, 80% VRRM 100 2,0 0,01 100 0,1 VT [V] 1 1 t [s] Fig. 3 I t versus time (1-10 s) 80 1: IGD, TVJ = 150°C 70 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 1 56 1 4 50 tgd IT(AV)M [µs] [A] 40 10 lim. 100 1000 10000 10 typ. 1 10 0,1 10 30 20 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W 1 dc = 1 0.5 0.4 0.33 0.17 0.08 60 TVJ = 125°C 100 23 [V] 4 5 6 7 8 910 t [ms] 1000 10 3 2 Fig. 2 Surge overload current ITSM: crest value, t: duration Fig. 1 Forward characteristics VG 2 0 100 1000 0 40 IG [mA] IG [mA] Fig. 4 Gate voltage & gate current Fig. 5 Gate controlled delay time tgd 60 80 120 160 Tcase [°C] Fig. 6 Max. forward current at case temperature 0,6 50 RthHA 0.6 0.8 1.0 2.0 4.0 8.0 dc = 1 0.5 0.4 0.33 0.17 0.08 40 P(AV) 30 0,4 ZthJC [W] i Rthi (K/W) 1 0.080 2 0.060 3 0.215 4 0.060 5 0.135 [K/W] 20 0,2 10 0 0 10 20 30 40 0 IT(AV) [A] 50 100 150 Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature © 2020 IXYS all rights reserved 0,0 1 10 100 1000 10000 t [ms] Tamb [°C] IXYS reserves the right to change limits, conditions and dimensions. ti (s) 0.0100 0.0001 0.0200 0.2000 0.1100 Fig. 7 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20200121e CLA60MT1200NHB IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200121e