CLA60MT1200NTZ

CLA60MT1200NTZ High Efficiency Thyristor VRRM = 1200 V I TAV = 30 A VT = 1,25 V Three Quadrants operation: QI - QIII 1~ Triac Part number CLA60MT1200NTZ Marking on Product: CLA60MT1200NTZ Backside: anode/cathode Three Quadrants Operation T2 Positive Half Cycle + (-) IGT 2 (+) IGT T1 REF IGT - T2 T2 T1 QII QI QIII QIV REF + IGT (-) IGT T1 3 1 REF Negative Half Cycle Note: All Polarities are referenced to T1 Features / Advantages: Applications: Package: TO-268AA (D3Pak-HV) ● Triac for line frequency ● Three Quadrants Operation - QI - QIII ● Planar passivated chip ● Long-term stability of blocking currents and voltages ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● High creepage distance between terminals Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200121f CLA60MT1200NTZ Ratings Rectifier Conditions Definition min. typ. max. Unit 1300 V Symbol VRSM/DSM max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1200 I R/D reverse current, drain current VR/D = 1200 V TVJ = 25°C 10 µA VR/D = 1200 V TVJ = 125 °C 2 mA TVJ = 25°C 1,28 V 1,56 V 1,25 V VT IT = forward voltage drop 30 A IT = 60 A IT = 30 A IT = 60 A I TAV average forward current TC = 120 °C 180° sine I RMS RMS forward current per phase VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only RthCH thermal resistance case to heatsink Ptot total power dissipation I TSM max. forward surge current I²t TVJ = 125 °C value for fusing V 1,61 V T VJ = 150 °C 30 A 66 A TVJ = 150 °C 0,86 V 12,5 mΩ 0,55 K/W 0,15 K/W TC = 25°C 230 W t = 10 ms; (50 Hz), sine TVJ = 45°C 380 A t = 8,3 ms; (60 Hz), sine VR = 0 V 410 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 325 A t = 8,3 ms; (60 Hz), sine VR = 0 V 350 A t = 10 ms; (50 Hz), sine TVJ = 45°C 720 A²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 700 A²s TVJ = 150 °C 530 A²s 510 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 25 t P = 300 µs pF 10 W 5 W 0,5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = t P = 200 µs; di G /dt = 0,3 A/µs; 90 A 150 A/µs IG = 30 A 500 A/µs (dv/dt) cr critical rate of rise of voltage VD = ⅔ VDRM VGT gate trigger voltage I GT gate trigger current 0,3 A; VD = ⅔ VDRM non-repet., I T = TVJ = 150°C 500 V/µs VD = 6 V TVJ = 25 °C 1,7 TVJ = -40 °C 1,9 V VD = 6 V TVJ = 25 °C ± 60 mA TVJ = -40 °C ± 80 mA TVJ = 150°C 0,2 V ±1 mA TVJ = 25 °C 90 mA R GK = ∞; method 1 (linear voltage rise) VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = ⅔ VDRM tp = 10 µs IG = 0,3 A; di G /dt = V 0,3 A/µs IH holding current VD = 6 V RGK = ∞ TVJ = 25 °C 60 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0,3 A; di G /dt = VR = 100 V; I T = 0,3 A/µs 30A; VD = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20200121f CLA60MT1200NTZ Package Ratings TO-268AA (D3Pak-HV) Symbol I RMS Definition Conditions RMS current per terminal TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 min. typ. max. 70 Unit A -40 150 °C -40 125 °C 150 °C 4 Weight FC 20 mounting force with clip d Spp/App Product Marking C L A 60 MT 1200 N TZ Part No. Date Code N 9,4 mm terminal to backside 5,6 mm Part description IXYS Logo 120 terminal to terminal creepage distance on surface | striking distance through air d Spb/Apb g yywwS = = = = = = = = Thyristor (SCR) High Efficiency Thyristor (up to 1200V) Current Rating [A] 1~ Triac Reverse Voltage [V] Three Quadrants operation: QI - QIII TO-268AA (D3Pak) (2HV) Assembly Line 123456 Assembly Code Ordering Standard Alternative Ordering Number CLA60MT1200NTZ-TUB CLA60MT1200NTZ-TRL Similar Part CLA60MT1200NHB CLA60MT1200NHR Equivalent Circuits for Simulation I V0 R0 Package TO-247AD (3) ISO247 (3) * on die level Delivery Mode Tube Tape & Reel Quantity 30 400 Code No. 512767 525122 Voltage class 1200 1200 T VJ = 150°C Thyristor V 0 max threshold voltage 0,86 R0 max slope resistance * 10 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Marking on Product CLA60MT1200NTZ CLA60MT1200NTZ V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20200121f CLA60MT1200NTZ Outlines TO-268AA (D3Pak-HV) A L2 E E1 C2 Dim. D1 D H A A1 A2 b C C2 D D1 D2 D3 E E1 e H L L2 L3 L4 D2 D3 L4 e A1 C e b 0.51 [13.0] 0.20 [5.0] 0.83 [21.0] 0.67 [17.0] L3 0.12 [3.0] 0°- 8° A2 L 0.22 [5.5] Millimeter min max 4.90 5.10 2.70 2.90 0.02 0.25 1.15 1.45 0.40 0.65 1.45 1.60 13.80 14.00 11.80 12.10 7.50 7.80 2.90 3.20 15.85 16.05 13.30 13.60 5.450 BSC 18.70 19.10 1.70 2.00 1.00 1.15 0.250 BSC 3.80 4.10 Inches min max 0.193 0.201 0.106 0.114 0.001 0.010 0.045 0.057 0.016 0.026 0.057 0.063 0.543 0.551 0.465 0.476 0.295 0.307 0.114 0.126 0.624 0.632 0.524 0.535 0.215 BSC 0.736 0.752 0.067 0.079 0.039 0.045 0.010 BSC 0.150 0.161 0.10 [2.5] RECOMMENDED MINIMUM FOOT PRINT 2 3 1 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200121f CLA60MT1200NTZ Thyristor 60 400 1000 VR = 0 V 50 40 300 IT TVJ = 45°C ITSM 2 TVJ = 45°C 30 [A] It [A] [A2s] 20 TVJ = 125°C 200 TVJ = 125°C 10 TVJ = 125°C TVJ = 150°C 0 0,0 TVJ = 25°C 0,5 1,0 1,5 50 Hz, 80% VRRM 100 2,0 0,01 100 0,1 VT [V] 1 1 t [s] Fig. 3 I t versus time (1-10 s) 80 1: IGD, TVJ = 150°C 70 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 1 56 1 4 50 tgd IT(AV)M [µs] [A] 40 10 lim. 100 1000 10000 10 typ. 1 10 0,1 10 30 20 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W 1 dc = 1 0.5 0.4 0.33 0.17 0.08 60 TVJ = 125°C 100 23 [V] 4 5 6 7 8 910 t [ms] 1000 10 3 2 Fig. 2 Surge overload current ITSM: crest value, t: duration Fig. 1 Forward characteristics VG 2 0 100 1000 0 40 IG [A] IG [mA] Fig. 4 Gate voltage & gate current 80 120 160 Tcase [°C] Fig. 5 Gate controlled delay time tgd Fig. 6 Max. forward current at case temperature 0,6 60 dc = 1 50 0.5 0.4 0.33 40 0.17 P(AV) 0.08 RthHA 0.6 0.8 1.0 2.0 4.0 8.0 0,4 ZthJC 30 [W] i Rthi (K/W) 1 0.080 2 0.060 3 0.215 4 0.060 5 0.135 [K/W] 20 0,2 10 0 ti (s) 0.0100 0.0001 0.0200 0.2000 0.1100 0,0 0 10 20 30 40 0 IT(AV) [A] 50 100 150 Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Tamb [°C] Fig. 7 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20200121f