CLA80E1200HF

CLA80E1200HF High Efficiency Thyristor VRRM = 1200 V I TAV = 80 A VT = 1.38 V Single Thyristor Part number CLA80E1200HF Backside: anode 2 1 3 Features / Advantages: Applications: Package: PLUS247 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191202d CLA80E1200HF Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1200 I R/D reverse current, drain current VT forward voltage drop min. typ. VR/D = 1200 V TVJ = 25°C 50 µA TVJ = 125°C 5 mA IT = TVJ = 25°C 1.40 V 1.77 V 1.38 V IT = 80 A TVJ = 125 °C 80 A I T = 160 A I TAV average forward current TC = 115 °C I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only RthCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current I²t value for fusing V VR/D = 1200 V I T = 160 A Ptot max. Unit 1300 V 1.87 V T VJ = 150 °C 80 A 126 A TVJ = 150 °C 0.88 V 6.3 mΩ 0.2 K/W 0.3 K/W TC = 25°C 620 W t = 10 ms; (50 Hz), sine TVJ = 45°C 900 A t = 8,3 ms; (60 Hz), sine VR = 0 V 970 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 765 A t = 8,3 ms; (60 Hz), sine VR = 0 V 825 A t = 10 ms; (50 Hz), sine TVJ = 45°C 4.05 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 3.92 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 2.93 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 2.83 kA²s 36 t P = 300 µs pF 10 W 5 W 0.5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = 240 A t P = 200 µs; di G /dt = 0.3 A/µs; (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C 1.5 TVJ = -40 °C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 38 mA TVJ = -40 °C 80 mA VGD gate non-trigger voltage TVJ = 150°C 0.2 V I GD gate non-trigger current 5 mA IL latching current TVJ = 25 °C 150 mA IG = 0.3 A; V = ⅔ VDRM non-repet., I T = 150 A/µs 80 A 500 A/µs 1000 V/µs TVJ = 150°C R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs IG = 0.3 A; di G /dt = V 0.3 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 100 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.3 A; di G /dt = VR = 100 V; I T = 0.3 A/µs 80A; V = ⅔ VDRM TVJ =125 °C di/dt = 20 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20191202d CLA80E1200HF Package Ratings PLUS247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 70 Unit A -40 150 °C -40 125 °C 150 °C 6 Weight FC 20 mounting force with clip d Spp/App Product Marking N 5.5 mm terminal to backside 5.5 mm Part description C L A 80 E 1200 HF IXYS Logo 120 terminal to terminal creepage distance on surface | striking distance through air d Spb/Apb g = = = = = = = Thyristor (SCR) High Efficiency Thyristor (up to 1200V) Current Rating [A] Single Thyristor Reverse Voltage [V] PLUS247 (3) XXXXXXXXX yywwZ Part Number Date Code 1234 Lot# Location Ordering Standard Ordering Number CLA80E1200HF Equivalent Circuits for Simulation I V0 R0 Marking on Product CLA80E1200HF * on die level Delivery Mode Tube Code No. 508680 T VJ = 150°C Thyristor V 0 max threshold voltage 0.88 V R0 max slope resistance * 3.8 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20191202d CLA80E1200HF Outlines PLUS247 A E D2 A2 A Q R A View A - A D D1 4 1 2 3 L1 E1 L A1 b b1 C b2 e Sym. Inches min. max. Millimeter min. max. A A1 A2 b b1 b2 C D D1 D2 E E1 e L L1 Q R 0.190 0.205 0.090 0.100 0.075 0.085 0.045 0.055 0.075 0.084 0.115 0.123 0.024 0.031 0.819 0.840 0.515 0.010 0.053 0.620 0.635 0.530 0.215 BSC 0.780 0.800 0.150 0.170 0.220 0.244 0.170 0.190 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 13.07 0.51 1.35 15.75 16.13 13.45 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 2 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191202d CLA80E1200HF Thyristor 200 800 10000 VR = 0 V 700 160 TVJ = 45°C TVJ = 45°C 600 IT 120 ITSM 2 It 500 [A] [A] 80 TVJ = 125°C [A2s] 400 125°C 150°C 40 300 TVJ = 25°C 0 0.5 TVJ = 125°C 1000 1.0 50 Hz, 80% VRRM 200 1.5 2.0 0.01 0.1 100 1 1 2 3 t [s] VT [V] t [ms] 2 Fig. 2 Surge overload current Fig. 1 Forward characteristics 10 4 5 6 7 8 910 Fig. 3 I t versus time (1-10 ms) 1000 80 1: IGD, TVJ = 150°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 2 VG 100 3 typ. tgd 1 1 dc = 1 0.5 0.4 0.33 0.17 0.08 60 IT(AV)M Limit 40 6 [V] 4 [µs] 5 [A] 10 TVJ = 125°C 20 4: PGAV = 0.5 W 5: PGM = 1 W 6: PGM = 10 W 0.1 1 10 100 1000 1 10 10000 0 100 1000 0 20 40 60 80 100 120 140 160 IG [mA] IG [mA] Fig. 4 Gate trigger characteristics TC [°C] Fig. 5 Gate controlled delay time Fig. 6 Max. forward current at case temperature 0.24 180 dc = 1 0.5 0.4 0.33 0.17 0.08 160 140 120 P(AV) 100 0.20 RthHA 0.4 0.6 0.8 1.0 2.0 4.0 [W]80 0.16 ZthJC 0.12 Rthi [K/W] ti [s] 0.08 0.0268 0.0100 0.04 0.0131 0.0218 0.0364 0.0001 0.0150 0.9500 [K/W] 60 40 20 0 0 20 40 60 80 100 IT(AV) [A] 0 50 100 150 Tamb [°C] © 2019 IXYS all rights reserved 0.1019 1 10 2 10 0.1400 3 10 104 t [ms] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. 0.00 100 Fig. 8 Transient thermal impedance Data according to IEC 60747and per semiconductor unless otherwise specified 20191202d