CLA80MT1200NHR

CLA80MT1200NHR High Efficiency Thyristor VRRM = 1200 V I TAV = 40 A VT = 1.26 V Three Quadrants operation: QI - QIII 1~ Triac Part number CLA80MT1200NHR Backside: isolated Three Quadrants Operation T2 Positive Half Cycle + (-) IGT T2 (+) IGT T1 REF IGT - 2 T2 T1 QII QI QIII QIV REF + IGT (-) IGT 3 1 T1 REF Negative Half Cycle Note: All Polarities are referenced to T1 Features / Advantages: Applications: Package: ISO247 ● Triac for line frequency ● Three Quadrants Operation - QI - QIII ● Planar passivated chip ● Long-term stability of blocking currents and voltages ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Backside: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. 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IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200121d CLA80MT1200NHR Ratings Rectifier Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1200 I R/D reverse current, drain current VT forward voltage drop TVJ = 25°C 10 µA 2 mA TVJ = 25°C 1.30 V 1.59 V 1.26 V IT = 40 A IT = 80 A IT = 40 A IT = 80 A I RMS RMS forward current per phase 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 °C for power loss calculation only thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing V TVJ = 125°C TC = 100 °C RthCH max. Unit 1300 V VR/D = 1200 V average forward current Ptot typ. VR/D = 1200 V I TAV I²t min. 1.64 V T VJ = 150 °C 40 A 88 A TVJ = 150 °C 0.88 V 10 mΩ 0.65 K/W 0.3 K/W TC = 25°C 190 W t = 10 ms; (50 Hz), sine TVJ = 45°C 520 A t = 8,3 ms; (60 Hz), sine VR = 0 V 560 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 440 A t = 8,3 ms; (60 Hz), sine VR = 0 V 475 A t = 10 ms; (50 Hz), sine TVJ = 45°C 1.35 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 1.31 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 970 A²s 940 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 25 t P = 300 µs PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = 120 A t P = 200 µs; di G /dt = 0.3 A/µs; (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage I GT gate trigger current VGD gate non-trigger voltage I GD gate non-trigger current IL latching current IG = 0.3 A; V = ⅔ VDRM non-repet., I T = pF 10 W 5 W 0.5 W 150 A/µs 40 A 500 A/µs TVJ = 150°C 500 V/µs VD = 6 V TVJ = 25 °C 1.7 TVJ = -40 °C 1.9 V VD = 6 V TVJ = 25 °C ± 70 mA TVJ = -40 °C ± 90 mA TVJ = 150°C 0.2 V ±1 mA TVJ = 25 °C 100 mA R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs IG = 0.3 A; di G /dt = V 0.3 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 70 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.3 A; di G /dt = VR = 100 V; I T = 0.3 A/µs 40A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20200121d CLA80MT1200NHR Package Ratings ISO247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 70 Unit A -55 150 °C -55 125 °C 150 °C 6 Weight MD mounting torque FC mounting force with clip d Spp/App terminal to terminal creepage distance on surface | striking distance through air terminal to backside d Spb/Apb VISOL t = 1 second isolation voltage t = 1 minute Product Marking Logo IXYS Part Number XXXXXXXXX 50/60 Hz, RMS; IISOL ≤ 1 mA g 0.8 1.2 Nm 20 120 N 2.7 mm 4.1 mm 3600 V 3000 V Part description C L A 80 MT 1200 N HR = = = = = = = = Thyristor (SCR) High Efficiency Thyristor (up to 1200V) Current Rating [A] 1~ Triac Reverse Voltage [V] Three Quadrants operation: QI - QIII ISO247 (3) yywwZ Date Code Lot# 123456 Location Ordering Standard Ordering Number CLA80MT1200NHR Similar Part CLA40MT1200NHR CLA60MT1200NHR CLA80MT1200NHB Equivalent Circuits for Simulation I V0 R0 Marking on Product CLA80MT1200NHR Package ISO247 (3) ISO247 (3) TO-247AD (3) * on die level Delivery Mode Tube Code No. 517123 Voltage class 1200 1200 1200 T VJ = 150°C Thyristor V 0 max threshold voltage 0.88 V R0 max slope resistance * 7.5 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20200121d CLA80MT1200NHR Outlines ISO247 A E A2 A3 2x E3 ØP 2x D3 S Q D D1 2x E2 4 1 2 3 D2 L1 E1 L 2x b2 3x b C b4 Millimeter min max A 4.70 5.30 A1 2.21 2.59 A2 1.50 2.49 A3 typ. 0.05 b 0.99 1.40 b2 1.65 2.39 b4 2.59 3.43 c 0.38 0.89 D 20.79 21.45 D1 typ. 8.90 D2 typ. 2.90 D3 typ. 1.00 E 15.49 16.24 E1 typ. 13.45 E2 4.31 5.48 E3 typ. 4.00 e 5.46 BSC L 19.80 20.30 L1 4.49 Ø P 3.55 3.65 Q 5.38 6.19 S 6.14 BSC Dim. A1 2x e Inches min max 0.185 0.209 0.087 0.102 0.059 0.098 typ. 0.002 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.819 0.844 typ. 0.350 typ. 0.114 typ. 0.039 0.610 0.639 typ. 0.530 0.170 0.216 typ. 0.157 0.215 BSC 0.780 0.799 0.177 0.140 0.144 0.212 0.244 0.242 BSC 2 3 1 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200121d CLA80MT1200NHR Thyristor 80 500 10000 VR = 0 V 50 Hz, 80% VRRM 70 60 400 IT 50 ITSM 2 It 40 [A] TVJ = 45°C 1000 [A] 30 [A2s] TVJ = 45°C 300 TVJ = 125°C 20 TVJ = 125°C 10 TVJ = 150°C TVJ = 125°C TVJ = 25°C 0 0,0 0,5 1,0 200 1,5 100 2,0 0,01 0,1 VT [V] 1 1 t [s] Fig. 3 I t versus time (1-10 s) 80 1: IGD, TVJ = 150°C 1 56 1 4 tgd IT(AV)M [µs] [A] 10 1000 30 20 lim. 10000 10 typ. 1 10 0,1 100 50 40 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W 10 60 TVJ = 125°C 100 23 1 dc = 1 0.5 0.4 0.33 0.17 0.08 70 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C [V] 4 5 6 7 8 910 t [ms] 1000 10 3 2 Fig. 2 Surge overload current ITSM: crest value, t: duration Fig. 1 Forward characteristics VG 2 0 100 1000 0 40 IG [mA] IG [mA] Fig. 4 Gate voltage & gate current Fig. 5 Gate controlled delay time tgd 80 80 120 160 Tcase [°C] Fig. 6 Max. forward current at case temperature 0,8 RthHA 0.4 0.6 0.8 1.0 2.0 4.0 dc = 1 0.5 0.4 0.33 0.17 0.08 60 P(AV) 0,6 ZthJC 40 0,4 i Rthi (K/W) 1 0.060 2 0.040 3 0.165 4 0.145 5 0.240 [K/W] [W] 20 0,2 0 ti (s) 0.0100 0.0001 0.0400 0.2500 0.1500 0,0 0 10 20 30 40 50 IT(AV) [A] 0 50 100 150 Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Tamb [°C] Fig. 7 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20200121d