CLE30E1200PB

CLE30E1200PB advanced High Efficiency Thyristor VRRM = 1200 V I TAV = 30 A VT = 1.32 V SemiFast Single Thyristor Part number CLE30E1200PB Backside: Anode 2 1 3 Features / Advantages: Applications: Package: TO-220 ● Thyristor for line and moderate frequencies ● Short turn-off time ● Planar passivated chip ● Long-term stability ● Softstart AC motor control ● Power converter ● AC power control ● Lighting and temperature control ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191202b CLE30E1200PB advanced Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1200 I R/D reverse current, drain current VT forward voltage drop I TAV average forward current VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 1200 V V VR/D = 1200 V TVJ = 25°C 10 µA VR/D = 1200 V TVJ = 125°C 2 mA TVJ = 25°C 1.34 V 1.65 V 1.32 V IT = 30 A IT = 60 A IT = 30 A IT = 60 A TVJ = 125 °C TC = 85 °C 1.70 V T VJ = 150 °C 30 A TVJ = 150 °C 0.92 V 14 mΩ 180° sine for power loss calculation only RthCH thermal resistance case to heatsink Ptot total power dissipation I TSM max. forward surge current I²t value for fusing 0.5 K/W 0.5 K/W TC = 25°C 250 W t = 10 ms; (50 Hz), sine TVJ = 45°C 350 A t = 8,3 ms; (60 Hz), sine VR = 0 V 380 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 300 A t = 8,3 ms; (60 Hz), sine VR = 0 V 320 A t = 10 ms; (50 Hz), sine TVJ = 45°C 615 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 600 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 450 A²s 425 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 2 t P = 300 µs PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = t P = 200 µs; di G /dt = 0.3 A/µs; 90 A IG = 30 A (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage I GT gate trigger current VGD gate non-trigger voltage I GD gate non-trigger current IL latching current 0.3 A; V = ⅔ VDRM non-repet., I T = pF 10 W 5 W 0.5 W 150 A/µs 500 A/µs TVJ = 150°C 500 V/µs VD = 6 V TVJ = 25 °C 1.4 TVJ = -40 °C 1.7 V VD = 6 V TVJ = 25 °C 30 mA TVJ = -40 °C 50 mA TVJ = 150°C 0.2 V 1 mA TVJ = 25 °C 90 mA R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs IG = 0.3 A; di G /dt = V 0.3 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 60 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.3 A; di G /dt = VR = 100 V; I T = 0.3 A/µs 30A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 50 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20191202b CLE30E1200PB advanced Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 150 °C -55 125 °C 150 °C 2 Weight MD mounting torque FC mounting force with clip Product Marking Part Number Logo Date Code Lot # g 0.4 0.6 Nm 20 60 N Part description C L E 30 E 1200 PB XXXXXX = = = = = = = Thyristor (SCR) High Efficiency Thyristor Semifast (up to 1200V) Current Rating [A] Single Thyristor Reverse Voltage [V] TO-220AB (3) yywwZ 123456 Location Ordering Standard Ordering Number CLE30E1200PB Equivalent Circuits for Simulation I V0 R0 V 0 max threshold voltage R0 max slope resistance * * on die level Delivery Mode Tube Quantity 50 Code No. 516162 T VJ = 150°C Thyristor 0.92 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Marking on Product CLE30E1200PB V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20191202b CLE30E1200PB advanced Outlines TO-220 A = supplier option H1 ØP D 4 3 L 3x b2 2 L1 1 3x b 2x e Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 2.54 5.85 10.66 BSC 6.85 0.390 0.100 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A1 Q E Dim. C A2 2 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191202b