CMA30E1600PN

CMA30E1600PN Thyristor VRRM = 1600 V I TAV = 23 A VT = 1.42 V Single Thyristor Part number CMA30E1600PN Backside: Isolated 2 1 3 Features / Advantages: Applications: Package: TO-220FP ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 2500 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Base plate: Plastic overmolded tab ● Reduced weight Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129e CMA30E1600PN Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1600 I R/D reverse current, drain current VT forward voltage drop TVJ = 25°C 10 µA 2 mA TVJ = 25°C 1.42 V 1.80 V 1.42 V IT = 30 A IT = 60 A IT = 30 A IT = 60 A I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 °C for power loss calculation only thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing V TVJ = 125°C TC = 40 °C RthCH max. Unit 1700 V VR/D = 1600 V average forward current Ptot typ. VR/D = 1600 V I TAV I²t min. 1.92 V T VJ = 150 °C 23 A 36 A TVJ = 150 °C 0.90 V 17 mΩ 2.5 K/W 0.5 K/W TC = 25°C 50 W t = 10 ms; (50 Hz), sine TVJ = 45°C 260 A t = 8,3 ms; (60 Hz), sine VR = 0 V 280 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 220 A t = 8,3 ms; (60 Hz), sine VR = 0 V 240 A t = 10 ms; (50 Hz), sine TVJ = 45°C 340 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 325 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 240 A²s 240 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 9 t P = 300 µs PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 125 °C; f = 50 Hz repetitive, IT = t P = 200 µs; di G /dt = 0.2 A/µs; 90 A IG = 30 A (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage I GT gate trigger current VGD gate non-trigger voltage I GD gate non-trigger current IL latching current 0.2 A; V = ⅔ VDRM non-repet., I T = pF 10 W 5 W 0.5 W 150 A/µs 500 A/µs TVJ = 125°C 500 V/µs VD = 6 V TVJ = 25 °C 1.3 TVJ = -40 °C 1.6 V VD = 6 V TVJ = 25 °C 28 mA TVJ = -40 °C 50 mA TVJ = 125°C 0.2 V 1 mA TVJ = 25 °C 90 mA R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs IG = 0.2 A; di G /dt = V 0.2 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 80 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.5 A; di G /dt = VR = 100 V; I T = 0.5 A/µs 30A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20191129e CMA30E1600PN Package Ratings TO-220FP Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 35 Unit A -40 150 °C -40 125 °C 150 °C 2 Weight MD mounting torque FC mounting force with clip d Spp/App d Spb/Apb VISOL terminal to terminal 1.6 terminal to backside 2.5 creepage distance on surface | striking distance through air t = 1 second isolation voltage t = 1 minute Product Marking Part Number Logo DateCode Lot# 50/60 Hz, RMS; IISOL ≤ 1 mA g 0.4 0.6 Nm 20 60 N 1.0 mm 2.5 mm 2500 V 2100 V Part description C M A 30 E 1600 PN XXXXXX = = = = = = = Thyristor (SCR) Thyristor (up to 1800V) Current Rating [A] Single Thyristor Reverse Voltage [V] TO-220ABFP (3) yywwZ 123456 Location Ordering Standard Ordering Number CMA30E1600PN Similar Part CMA30E1600PB CMA30E1600PZ CS22-12io1M CLA30E1200PB Package TO-220AB (3) TO-263AB (D2Pak) (2HV) TO-220ABFP (3) TO-220AB (3) CLA30E1200PC CLA30E1200HB CS22-08io1M TO-263AB (D2Pak) (2) TO-247AD (3) TO-220ABFP (3) Equivalent Circuits for Simulation I V0 R0 Marking on Product CMA30E1600PN * on die level Delivery Mode Tube Code No. 505254 Voltage class 1600 1600 1200 1200 1200 1200 800 T VJ = 150°C Thyristor V 0 max threshold voltage 0.9 V R0 max slope resistance * 14 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20191129e CMA30E1600PN Outlines TO-220FP A ØP E A1 Q H Dim. D 1 2 3 L1 A2 L b1 c b e A A1 A2 b c D E e H L L1 ØP Q 2 Millimeters min max 4.50 4.90 2.34 2.74 2.56 2.96 0.70 0.90 0.45 0.60 15.67 16.07 9.96 10.36 2.54 BSC 6.48 6.88 12.68 13.28 3.03 3.43 3.08 3.28 3.20 3.40 Inches min max 0.177 0.193 0.092 0.108 0.101 0.117 0.028 0.035 0.018 0.024 0.617 0.633 0.392 0.408 0.100 BSC 0.255 0.271 0.499 0.523 0.119 0.135 0.121 0.129 0.126 0.134 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129e CMA30E1600PN Thyristor 60 250 1000 VR = 0 V 50 Hz, 80% VRRM 50 40 TVJ = 45°C 200 IT ITSM 2 It 30 [A] TVJ = 45°C [A] 20 [A2s] 150 TVJ = 125°C 10 TVJ = 125°C 150°C TVJ = 25°C 0 0,5 1,0 100 1,5 10 2,0 0,01 0,1 VT [V] B IGD: TVJ = 25°C 2 [V] 1 3 4 5 6 7 8 910 t [ms] Fig. 3 I t versus time (1-10 s) 40 C IGD: TVJ = -40°C IGD: TVJ = 0°C B 2 2 102 B VG 1 Fig. 2 Surge overload current ITSM: crest value, t: duration IGD: TVJ = 125°C 3 1 t [s] Fig. 1 Forward characteristics 4 TVJ = 125°C 100 101 dc = 1 0.5 0.4 0.33 0.17 0.08 30 TVJ = 125°C tgd IT(AV)M [µs] [A] 20 lim. 100 10 IGD: TVJ = 25°C typ. A 10-1 10-2 0 0 25 50 75 10-1 100 0 101 0 Fig. 4 Gate voltage & gate current Fig. 5 Gate controlled delay time tgd dc = 1 0.5 0.4 0.33 0.17 0.08 30 P(AV) i Rthi (K/W) 1 0.1 2 0.06 3 0.2 4 0.35 5 1.79 2,5 RthHA 0.6 0.8 1.0 2.0 4.0 8.0 80 120 160 Tcase [°C] Triggering: A = no; B = possible; C = safe 40 40 IG [A] IG [mA] 2,0 1,5 Fig. 6 Max. forward current at case temperature ti (s) 0.01 0.0001 0.02 0.4 0.15 ZthJC 20 [W] 1,0 [K/W] 10 0,5 0 0,0 0 10 20 30 IT(AV) [A] 0 50 100 150 Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Tamb [°C] Fig. 7 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20191129e CMA30E1600PN IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129e