CMA30P1600FC

CMA30P1600FC Thyristor VRRM = 2x 1600 V I TAV = 30 A VT = 1.3 V Phase leg Part number CMA30P1600FC Backside: isolated 2 1 4 5 3 Features / Advantages: Applications: Package: i4-Pac ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 3000 V~ ● Industry convenient outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Backside: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191202c CMA30P1600FC Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1600 I R/D reverse current, drain current VT forward voltage drop TVJ = 25°C 50 µA 2 mA TVJ = 25°C 1.30 V 1.63 V 1.30 V IT = 30 A IT = 60 A IT = 30 A IT = 60 A I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 °C for power loss calculation only thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing V TVJ = 125°C TC = 90 °C RthCH max. Unit 1700 V VR/D = 1600 V average forward current Ptot typ. VR/D = 1600 V I TAV I²t min. 1.71 V T VJ = 150 °C 30 A 47 A TVJ = 150 °C 0.87 V 14.2 mΩ 1 K/W 0.2 K/W TC = 25°C 125 W t = 10 ms; (50 Hz), sine TVJ = 45°C 400 A t = 8,3 ms; (60 Hz), sine VR = 0 V 430 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 340 A t = 8,3 ms; (60 Hz), sine VR = 0 V 365 A t = 10 ms; (50 Hz), sine TVJ = 45°C 800 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 770 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 580 A²s 555 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 16 t P = 300 µs pF 10 W 5 W 0.5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 125 °C; f = 50 Hz repetitive, IT = t P = 200 µs; di G /dt = 0.3 A/µs; 90 A IG = 30 A (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C 1 TVJ = -40 °C 1.2 V I GT gate trigger current VD = 6 V TVJ = 25 °C 55 mA TVJ = -40 °C 80 mA VGD gate non-trigger voltage TVJ = 150°C 0.2 V I GD gate non-trigger current 5 mA IL latching current TVJ = 25 °C 150 mA 0.3 A; V = ⅔ VDRM non-repet., I T = 150 A/µs 500 A/µs 1000 V/µs TVJ = 125°C R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs IG = 0.3 A; di G /dt = V 0.3 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 100 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.5 A; di G /dt = VR = 100 V; I T = 0.5 A/µs 30A; V = ⅔ VDRM TVJ =125 °C di/dt = 15 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20191202c CMA30P1600FC Package Ratings i4-Pac Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 70 Unit A -40 150 °C -40 125 °C 150 °C 6 Weight FC 20 mounting force with clip d Spp/App VISOL t = 1 minute Product Marking UL Logo IXYS mm terminal to backside 5.1 mm 3000 V 2500 V 50/60 Hz, RMS; IISOL ≤ 1 mA Part description C M A 30 P 1600 FC ® ISOPLUS® Part Number N 1.7 t = 1 second isolation voltage 120 terminal to terminal creepage distance on surface | striking distance through air d Spb/Apb g = = = = = = = Thyristor (SCR) Thyristor (up to 1800V) Current Rating [A] Phase leg Reverse Voltage [V] i4-Pac (5) XXXXXXXXX Date Code yywwZ 1234 Location Lot# Ordering Standard Ordering Number CMA30P1600FC Similar Part CMA50P1600FC Equivalent Circuits for Simulation I V0 R0 Marking on Product CMA30P1600FC Package i4-Pac (5) * on die level Delivery Mode Tube Code No. 507440 Voltage class 1600 T VJ = 150°C Thyristor V 0 max threshold voltage 0.87 V R0 max slope resistance * 11.7 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 25 Data according to IEC 60747and per semiconductor unless otherwise specified 20191202c CMA30P1600FC Outlines i4-Pac D2 A A2 E1 L L1 D D3 D1 R Q E 4x e c 1 2 3 4 5 4x b2 5x b A1 b4 W Dim. A A1 A2 b b2 b4 c D D1 D2 D3 E E1 e L L1 Q R W Millimeter min max 4.83 5.21 2.59 3.00 1.17 2.16 1.14 1.40 1.47 1.73 2.54 2.79 0.51 0.74 20.80 21.34 14.99 15.75 1.65 2.03 20.30 20.70 19.56 20.29 16.76 17.53 3.81 BSC 19.81 21.34 2.11 2.59 5.33 6.20 4.57 2.54 0.10 - Inches min max 0.190 0.205 0.102 0.118 0.046 0.085 0.045 0.055 0.058 0.068 0.100 0.110 0.020 0.029 0.819 0.840 0.590 0.620 0.065 0.080 0.799 0.815 0.770 0.799 0.660 0.690 0.150 BSC 0.780 0.840 0.083 0.102 0.210 0.244 0.100 0.180 0.004 - Die konvexe Form des Substrates ist typ. < 0.05 mm über der Kunststoffoberfläche der Bauteilunterseite The convexbow of substrate is typ. < 0.05 mm over plastic surface level ofdevice bottom side 2 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1 4 5 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20191202c CMA30P1600FC Thyristor 80 350 1000 50 Hz, 80% VRRM VR = 0 V 300 60 IT ITSM TVJ = 45°C TVJ = 45°C 250 2 It [A] 40 TVJ = 125°C 2 200 [A] [A s] TVJ = 125°C 20 150 125°C 150°C TVJ = 25°C 0 0,5 100 1,0 1,5 100 2,0 0,01 0,1 1 VT [V] t [ms] 1000 80 dc = 1 0.5 0.4 0.33 0.17 0.08 60 100 4 23 1 4 5 6 7 8 910 Fig. 3 I t versus time (1-10 ms) 56 typ. tgd IT(AV)M Limit 40 1 [V] 3 2 Fig. 2 Surge overload current 1: IGD, TVJ = 150°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C VG 2 t [s] Fig. 1 Forward characteristics 10 1 [µs] [A] 10 TVJ = 125°C 4: PGAV = 0.5 W 5: PGM = 1 W 6: PGM = 10 W 0,1 1 10 100 1000 1 10 10000 0 100 Fig. 4 Gate trigger characteristics 25 50 75 100 125 150 TC [°C] Fig. 6 Max. forward current at case temperature 1,2 RthHA 0.6 0.8 1.0 2.0 4.0 8.0 dc = 1 0.5 0.4 0.33 0.17 0.08 40 0 Fig. 5 Gate controlled delay time 60 P(AV) 1000 IG [mA] IG [mA] 50 20 1,0 0,8 ZthJC 30 0,6 Rthi [K/W] [K/W] [W] 20 0,4 10 0,2 0 0,0 0 10 20 30 40 0 IT(AV) [A] 50 100 150 Tamb [°C] © 2019 IXYS all rights reserved 10 100 0.0004 0.0090 0.21 0.41 0.26 0.0140 0.0500 0.3600 1000 10000 t [ms] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. 1 ti [s] 0.02 0.10 Fig. 8 Transient thermal impedance Data according to IEC 60747and per semiconductor unless otherwise specified 20191202c