CMA80PD1600NA

CMA80PD1600NA Thyristor VRRM = 2x 1600 V I TAV = 80 A VT = 1.29 V Phase leg Part number CMA80PD1600NA Backside: isolated 4 3 1 2 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191205c CMA80PD1600NA Ratings Rectifier Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1600 I R/D reverse current, drain current VT forward voltage drop min. typ. VR/D = 1600 V TVJ = 25°C 100 µA TVJ = 125°C 10 mA IT = TVJ = 25°C 1.30 V 1.64 V 1.29 V IT = 80 A TVJ = 125 °C 80 A I T = 160 A I TAV average forward current TC = 80 °C I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only RthCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current I²t value for fusing V VR/D = 1600 V I T = 160 A Ptot max. Unit 1700 V 1.72 V T VJ = 150 °C 80 A 126 A TVJ = 150 °C 0.86 V 5.5 mΩ 0.45 K/W 0.1 K/W TC = 25°C 270 W t = 10 ms; (50 Hz), sine TVJ = 45°C 1.07 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.16 kA t = 10 ms; (50 Hz), sine TVJ = 150 °C 910 A t = 8,3 ms; (60 Hz), sine VR = 0 V 980 A t = 10 ms; (50 Hz), sine TVJ = 45°C 5.73 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 5.55 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 4.14 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 4.00 kA²s 54 t P = 300 µs pF 10 W 5 W 0.5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = 240 A t P = 200 µs; di G /dt = 0.3 A/µs; (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C TVJ = -40 °C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 100 mA TVJ = -40 °C 200 mA VGD gate non-trigger voltage TVJ = 150°C 0.2 V I GD gate non-trigger current 10 mA IL latching current TVJ = 25 °C 450 mA IG = 0.3 A; V = ⅔ VDRM non-repet., I T = 150 A/µs 80 A 500 A/µs 1000 V/µs TVJ = 150°C R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs IG = 0.3 A; di G /dt = 1.5 V 0.3 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 200 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.3 A; di G /dt = VR = 100 V; I T = 0.3 A/µs 80A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20191205c CMA80PD1600NA Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 150 Unit A -40 150 °C -40 125 °C 150 °C 30 Weight g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm d Spp/App d Spb/Apb VISOL Product Marking Logo XXXXX ® yywwZ 1234 Date Code Location Ordering Standard 8.6 50/60 Hz, RMS; IISOL ≤ 1 mA 3.2 mm 6.8 mm 3000 V 2500 V Part description Part Number UL C M A 80 PD 1600 NA = = = = = = = Thyristor (SCR) Thyristor (up to 1800V) Current Rating [A] Phase leg Reverse Voltage [V] SOT-227B (minibloc) Lot# Ordering Number CMA80PD1600NA Similar Part MCD40-16io6 Equivalent Circuits for Simulation V0 10.5 t = 1 second isolation voltage t = 1 minute I terminal to terminal terminal to backside creepage distance on surface | striking distance through air R0 Marking on Product CMA80PD1600NA Package SOT-227B (minibloc) * on die level Delivery Mode Tube Code No. 509041 Voltage class 1600 T VJ = 150°C Thyristor V 0 max threshold voltage 0.86 V R0 max slope resistance * 3.4 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20191205c CMA80PD1600NA Outlines SOT-227B (minibloc) 4 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 3 1 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20191205c CMA80PD1600NA Thyristor 160 900 6000 50 Hz, 80% VRRM 140 VR = 0 V 5000 800 120 4000 100 IT 700 It TVJ = 45°C ITSM 80 3000 2 600 [A] 60 [A s] [A] 40 125°C 150°C 20 TVJ = 45°C 2 TVJ = 125°C 2000 500 1000 TVJ = 125°C TVJ = 25°C 0 0,5 400 1,0 1,5 0 2,0 0,01 0,1 1 VT [V] t [ms] 1000 140 2 3 6 100 100 4 typ. tgd 1 IT(AV)M Limit 80 [A] 60 [µs] [V] 10 40 TVJ = 125°C 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W IGD, TVJ = 125°C 0,1 10 dc = 1 0.5 0.4 0.33 0.17 0.08 120 5 1 4 5 6 7 8 910 Fig. 3 I t versus time (1-10 ms) 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 1 3 2 Fig. 2 Surge overload current 1: IGD, TVJ = 125°C VG 2 t [s] Fig. 1 Forward characteristics 10 1 100 1000 20 1 10 10000 0 100 1000 0 25 IG [mA] IG [mA] Fig. 4 Gate trigger characteristics 75 100 125 150 TC [°C] Fig. 5 Gate controlled delay time 160 50 Fig. 6 Max. forward current at case temperature 0,5 dc = 1 0.5 0.4 0.33 0.17 0.08 120 P(AV) RthHA 0.2 0.4 0.6 0.8 1.0 2.0 80 0,4 0,3 ZthJC [W] 0,2 [K/W] 40 0,1 0 0,0 0 20 40 60 80 100 IT(AV) [A] 50 100 150 Tamb [°C] © 2019 IXYS all rights reserved 10 100 ti [s] 0.030 0.011 0.035 0.002 0.065 0.108 0.027 0.480 0.212 0.170 1000 10000 t [ms] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. 1 Rthi [K/W] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20191205c