CME30E1600PZ-TRL

CME30E1600PZ Thyristor VRRM = 1600 V I TAV = 30 A VT = 1.96 V SemiFast Single Thyristor Part number CME30E1600PZ Marking on Product: CME30E1600PZ Backside: anode ESD Level: H3B 4 1 3 Features / Advantages: Applications: Package: TO-263 (D2Pak-HV) ● Thyristor for line and moderate frequencies ● Short turn-off time ● Planar passivated chip ● Long-term stability ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● High creepage distance between terminals Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212d CME30E1600PZ Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1600 I R/D reverse current, drain current VT forward voltage drop I TAV average forward current VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 1700 V V VR/D = 1600 V TVJ = 25°C 50 µA VR/D = 1600 V TVJ = 125°C 2 mA TVJ = 25°C 1.92 V 2.47 V 1.96 V IT = 30 A IT = 60 A IT = 30 A IT = 60 A TVJ = 125 °C TC = 80 °C 2.68 V T VJ = 150 °C 30 A TVJ = 150 °C 1.23 V 25 mΩ 180° sine for power loss calculation only RthCH thermal resistance case to heatsink Ptot total power dissipation I TSM max. forward surge current I²t value for fusing 0.75 K/W K/W 0.25 TC = 25°C 165 W t = 10 ms; (50 Hz), sine TVJ = 45°C 260 A t = 8,3 ms; (60 Hz), sine VR = 0 V 280 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 220 A t = 8,3 ms; (60 Hz), sine VR = 0 V 240 A t = 10 ms; (50 Hz), sine TVJ = 45°C 340 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 325 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 240 A²s 240 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 13 t P = 300 µs PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 125 °C; f = 50 Hz repetitive, IT = t P = 200 µs; di G /dt = 0.2 A/µs; 90 A IG = 30 A (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage I GT gate trigger current VGD gate non-trigger voltage I GD gate non-trigger current IL latching current 0.2 A; V = ⅔ VDRM non-repet., I T = pF 10 W 5 W 0.5 W 150 A/µs 500 A/µs TVJ = 125°C 500 V/µs VD = 6 V TVJ = 25 °C 1.3 TVJ = -40 °C 1.6 V VD = 6 V TVJ = 25 °C 50 mA TVJ = -40 °C 80 mA TVJ = 150°C 0.2 V 1 mA TVJ = 25 °C 120 mA R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs IG = 0.2 A; di G /dt = V 0.2 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 90 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.5 A; di G /dt = 0.5 A/µs VR = 20 V; I T = 30 A; V = ⅔ VDRM TVJ =125 °C 120 µs di/dt = 10 A/µs dv/dt = 1000 V/µs t p = 200 µs IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212d CME30E1600PZ Package Ratings TO-263 (D2Pak-HV) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 35 Unit A -40 150 °C -40 125 °C 150 °C 1.5 Weight FC 20 mounting force with clip d Spp/App typ. Product Marking C M E 30 E 1600 PZ IXYS Zyyww Logo Assembly Line Date Code N 4.2 mm terminal to backside 4.7 mm Part description XXXXXXXXX Part No. 60 terminal to terminal creepage distance on surface | striking distance through air d Spb/Apb g = = = = = = = Thyristor (SCR) Thyristor Semifast (up to 1800V) Current Rating [A] Single Thyristor Reverse Voltage [V] TO-263AB (D2Pak) (2HV) 000000 Assembly Code Ordering Standard Alternative Ordering Number CME30E1600PZ-TRL CME30E1600PZ-TUB Equivalent Circuits for Simulation I V0 R0 * on die level Delivery Mode Tape & Reel Tube Quantity 800 50 Code No. 512781 523828 T VJ = 150 °C Thyristor V 0 max threshold voltage 1.23 R0 max slope resistance * 22 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Marking on Product CME30E1600PZ CME30E1600PZ V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20190212d CME30E1600PZ Outlines TO-263 (D2Pak-HV) Dim. W Supplier Option D1 L1 c2 A1 H D E A 1 4 3 L e1 D2 A2 c 2x e 2x b2 10.92 (0.430) W E1 Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.091 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) 9.02 (0.355) mm (Inches) 2x b A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.3 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 4 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212d CME30E1600PZ Thyristor 60 250 1000 VR = 0 V 50 Hz, 80% VRRM 50 TVJ = 125°C 40 150°C IT TVJ = 45°C 200 ITSM 2 It 30 [A] TVJ = 45°C [A] 20 [A2s] 150 TVJ = 125°C 10 TVJ = 25°C 0 1.0 1.5 2.0 100 2.5 10 3.0 0.01 0.1 VT [V] B IGD: TVJ = 25°C 2 [V] 1 4 5 6 7 8 910 t [ms] Fig. 3 I t versus time (1-10 s) 40 30 TVJ = 125°C 101 tgd IT(AV)M [µs] [A] 20 10 lim. 0 dc = 1 0.5 0.4 0.33 0.17 0.08 10 IGD: TVJ = 25°C typ. A 10-1 10-2 0 0 3 C IGD: TVJ = -40°C IGD: TVJ = 0°C B 2 2 102 B VG 1 Fig. 2 Surge overload current ITSM: crest value, t: duration IGD: TVJ = 125°C 3 1 t [s] Fig. 1 Forward characteristics 4 TVJ = 125°C 100 25 50 75 10-1 100 0 101 0 40 IG [A] IG [mA] Fig. 4 Gate voltage & gate current Fig. 5 Gate controlled delay time tgd Triggering: A = no; B = possible; C = safe 100 80 120 Tcase [°C] Fig. 6 Max. forward current at case temperature 0.8 RthHA 0.6 0.8 1.0 2.0 4.0 8.0 80 dc = 1 0.5 60 0.4 P(AV) 0.33 0.17 0.08 40 0.6 ZthJC 0.4 [K/W] [W] 0.2 20 0 Rthi [K/W] ti [s] 0.05 0.01 0.08 0.25 0.15 0.0010 0.020 0.25 0.22 0.13 0.0 0 10 20 30 40 0 IT(AV) [A] 50 100 150 Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Tamb [°C] Fig. 7 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20190212d