CPC3703ZTR

CPC3703 250V N-Channel Depletion-Mode FET INTEGRATED CIRCUITS DIVISION V(BR)DSX / V(BR)DGX RDS(on) (max) IDSS (min) Package 250V 4 360mA SOT-89 Features • • • • High Breakdown Voltage: 250V Low On-Resistance: 4 max. at 25ºC Low VGS(off) Voltage: -1.6 to -3.9V Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • High Input Impedance • Small Package Size: SOT-89 Applications • • • • • • Ignition Modules Normally-On Switches Solid State Relays Converters Telecommunications Power Supply Description The CPC3703 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high-power applications. The CPC3703 is a highly reliable device that has been used extensively in our Solid State Relays for industrial and telecommunications applications. This device excels in power applications that require low drain-source resistance, particularly in cold environments such as automotive ignition modules. The CPC3703 offers a low, 4 maximum, on-state resistance at 25ºC. The CPC3703 has a minimum breakdown voltage of 250V, and is available in an SOT-89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. Ordering Information Part # CPC3703CTR Package Pinout Description N-Channel Depletion Mode FET, SOT-89 Pkg. Tape and Reel (1000/Reel) Circuit Symbol D D G G D S S (SOT-89) DS-CPC3703-R07 www.ixysic.com 1 INTEGRATED CIRCUITS DIVISION CPC3703 Absolute Maximum Ratings @ 25ºC (Unless Otherwise Noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Pulsed Drain Current Total Package Dissipation 1 Junction Temperature Operational Temperature, Ambient Storage Temperature 1 Ratings 250 ±15 600 1.1 125 -55 to +125 -55 to +125 Units VP VP mA W ºC ºC ºC Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied. Mounted on 1"x1"x0.062" FR4 board. Electrical Characteristics @ 25ºC (Unless Otherwise Noted) Symbol V(BR)DSX VGS(off) dVGS(off) /dT IGSS Drain-to-Source Leakage Current Conditions VGS= -5V, ID=100µA VDS= 5V, ID=1mA VDS= 5V, ID=1A VGS=±15V, VDS=0V VGS= -5V, VDS=250V VGS= -5V, VDS=200V, TA=125ºC VGS= 0V, VDS=15V ID(off) Saturated Drain-to-Source Current Static Drain-to-Source On-State Resistance Change in RDS(on) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance IDSS RDS(on) dRDS(on) /dT GFS CISS COSS CRSS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf Source-Drain Diode Voltage Drop Thermal Resistance (Junction to Ambient) VSD RJA VGS= 0V, ID=200mA ID= 100mA, VDS = 10V VGS= -5V VDS= 25V Max -3.9 4.5 100 1 1 4 1.1 350 65 35 - 23 8 17 70 35 20 25 80 - 0.6 90 1.8 - f= 1MHz VDD= 25V ID= 150mA VGS= 0V to -10V Rgen= 50 VGS= -5V, ISD=150mA - Units V V mV/ºC nA µA mA mA  %/ºC m pF ns V ºC/W VDD RL 0V 90% PULSE GENERATOR INPUT 10% OUTPUT Rgen t on t d(on) VDS Typ 327 51 27 - Switching Waveform & Test Circuit -10V Min 250 -1.6 360 225  Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Off Voltage Change in VGS(off) with Temperature Gate Body Leakage Current t off tf t d(off) tr D.U.T. 90% 90% INPUT OUTPUT 0V 2 10% 10% www.ixysic.com R07 INTEGRATED CIRCUITS DIVISION CPC3703 PERFORMANCE DATA (@25ºC Unless Otherwise Noted)* VGS=-1.0 ID (mA) ID (mA) VGS=-1.5 VGS=-2.0 350 8 300 7 250 6 200 1 2 3 VDS (V) 4 5 +125ºC 150 +25ºC -55ºC 50 0 -3.5 6 VGS(off) Vs. Temperature (VDS=10V, ID=1mA) 5 4 3 100 VGS=-2.5 0 RDS(on) (:) 1000 900 800 700 600 500 400 300 200 100 0 RDS(on) Vs. Temperature (VGS=0V, ID=200mA) Instantaneous Transfer Characteristics (VDS=5V, TA=TJ) Output Characteristics -3.0 -2.5 VGS (V) 2 -2.0 1 -1.5 0 50 300 -55ºC +25ºC +125ºC 250 -2.5 GFS (m ) 0.1 200 ID (A) : VGS(off) (V) 150 Transconductance vs. Drain Current (VDS=10V, TA=TJ) 1 -3.0 100 Temperature (ºC) Maximum Rated Safe Operating Area -2.0 -50 0.01 150 100 -3.5 50 0 50 100 150 0.1 Temperature (ºC) 10 VDS (V) Power Dissipation vs. Ambient Temperature Capacitance vs. Drain-Source Voltage (VGS=-5V) 1.2 1 100 0 1000 0.6 0.4 0.2 450 CISS 375 300 225 COSS 150 CRSS 75 0 0.0 0 20 40 60 80 100 Temperature (ºC) 120 140 0 10 20 VDS (V) 20 30 40 50 60 70 80 90 100 On-Resistance vs. Drain Current (VGS=0V) 525 0.8 10 ID (mA) 600 1.0 Capacitance (pF) Power Dissipation (W) 0 0.001 -50 RDS(on) (:) -4.0 30 40 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 ID (A) *The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please contact our application department. R07 www.ixysic.com 3 INTEGRATED CIRCUITS DIVISION CPC3703 Manufacturing Information Moisture Sensitivity All plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated Circuits Division classified all of its plastic encapsulated devices for moisture sensitivity according to the latest version of the joint industry standard, IPC/JEDEC J-STD-020, in force at the time of product evaluation. We test all of our products to the maximum conditions set forth in the standard, and guarantee proper operation of our devices when handled according to the limitations and information in that standard as well as to any limitations set forth in the information or standards referenced below. Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced product performance, reduction of operable life, and/or reduction of overall reliability. This product carries a Moisture Sensitivity Level (MSL) rating as shown below, and should be handled according to the requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-033. Device Moisture Sensitivity Level (MSL) Rating CPC3703C MSL 1 ESD Sensitivity This product is ESD Sensitive, and should be handled according to the industry standard JESD-625. Reflow Profile This product has a maximum body temperature and time rating as shown below. All other guidelines of J-STD-020 must be observed. Device Maximum Temperature x Time CPC3703C 260ºC for 30 seconds Board Wash IXYS Integrated Circuits Division recommends the use of no-clean flux formulations. However, board washing to remove flux residue is acceptable, and the use of a short drying bake may be necessary. Chlorine-based or Fluorine-based solvents or fluxes should not be used. Cleaning methods that employ ultrasonic energy should not be used. 4 www.ixysic.com R07 INTEGRATED CIRCUITS DIVISION CPC3703 Mechanical Dimensions CPC3703C 1.626 / 1.829 (0.064 / 0.072) 1.397 / 1.600 (0.055 / 0.063) R 0.254 (R 0.010) PCB Land Pattern 1.90 (0.075) 3.937 / 4.242 (0.155 / 0.167) 45º 2.286 / 2.591 (0.090 / 0.102) 2.45 (0.096) 1.40 (0.055) Pin 1 0.889 / 1.194 (0.035 / 0.047) 0.356 / 0.483 (0.014 / 0.019) 0.432 / 0.559 (0.017 / 0.022) 50º 0.356 / 0.432 (0.014 / 0.017) 0.864 / 1.016 (0.034 / 0.040) 4.394 / 4.597 (0.173 / 0.181) 1.118 / 1.270 (0.044 / 0.050) 50º 5.00 (0.197) 1.90 (0.074) 0.432 / 0.508 (0.017 / 0.020) 0.60 (0.024) TYP 3 2.845 / 2.997 (0.112 / 0.118) 1.422 / 1.575 (0.056 / 0.062) 2.921 / 3.073 (0.115 / 0.121) Dimensions mm MIN / mm MAX (inches MIN / inches MAX) CPC3703CTR Tape & Reel 177.8 Dia (7.00 Dia) 5.50 ± 0.05 (0.217 ± 0.002) Top Cover Tape Thickness 0.102 Max (0.004 Max) 2.00 ± 0.05 (0.079 ± 0.002) 4.00 ± 0.1 (0.157 ± 0.004) W=12.00 ± 0.3 (0.472 ± 0.012) B0=4.60 ± 0.1 (0.181 ± 0.004) K0=1.80 ± 0.1 (0.071 ± 0.004) Embossed Carrier 1.75 ± 0.1 (0.069 ± 0.004) A0=4.80 ± 0.1 (0.189 ± 0.004) P=8.00 ± 0.1 (0.315 ± 0.004) Embossment Dimensions mm (inches) For additional information please visit our website at: www.ixysic.com IXYS Integrated Circuits Division makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in IXYS Integrated Circuits Division’s Standard Terms and Conditions of Sale, IXYS Integrated Circuits Division assumes no liability whatsoever, and disclaims any express or implied warranty, relating to its products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right. The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or where malfunction of IXYS Integrated Circuits Division’s product may result in direct physical harm, injury, or death to a person or severe property or environmental damage. IXYS Integrated Circuits Division reserves the right to discontinue or make changes to its products at any time without notice. 5 Specification: DS-CPC3703-R07 ©Copyright 2014, IXYS Integrated Circuits Division All rights reserved. Printed in USA. 8/1/2014