CS20-25MOT1

CS20-25moT1 VDRM = 2500 V ITSM = 200 A High Voltage Phase Control Thyristor Backside = anode 4 1 3 Features / Advantages: Applications: Package: TO-268AA (D3Pak) • high voltage thyristor - for line frequency - chip technology for long term stability - planar glass passivated • controlled rectifiers - power supplies - drives • AC switches • capacitor discharge control - flash tubes - X-ray and laser generators • Industry standard outline • RoHS compliant • Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, test conditions and dimensions. © 2022 IXYS All rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220623c 1-3 CS20-25moT1 Rectifier Ratings Symbol Definitions VDRM/DSM max. Unit max. repetitive/non-repetitive forward blocking voltage 2500 V VRRM/RSM max. repetitive/non-repetitive reverse blocking voltage 1650 V IRRM/DRM max. repetitive off-state current VR = VRRM VD = VDRM TVJ = 25°C TVJ = 70°C 50 200 µA µA IDSM/RSM max. non-repetitive off-state current VR = VRSM; VD = VDSM TVJ = 70°C 2 mA ITSM max. forward surge current t = 10 ms, sine; VR = 0 V TVJ = 25°C 200 A (di/dt)cr critical rate of rise of current f = 50 Hz; tp = 200 µs; VD = 2000 V diG /dt = 0.45 A/µs; IG = 0.45 A non repetitive; IT = 45 A 150 A/µs (dv/dt)cr critical rate of rise of voltage VD = 2200 V RGK = ; method 1 (linear voltage rise) 5000 V/µs VT forward voltage drop IT = 45 A TVJ = 25°C 3.0 V VGT IGT gate trigger voltage gate trigger current VD = 6 V TVJ = 25°C 2.5 250 V mA VGD IGD gate non-trigger voltage gate non-trigger current VD = 2/3 VDRM TVJ = 25°C 0.2 5 V mA IL latching current tp = 10 µs; VD = 6 V IG = 0.45 A; diG /dt = 0.45 A/µs TVJ = 700 mA IH holding current VD = 6 V; RGK =  TVJ = 0°C TVJ = 70°C 300 mA mA 100 µs 0.8 K/W tq turn-off time RthJC thermal resistance junction to case RthCH thermal resistance case to heatsink IXYS reserves the right to change limits, test conditions and dimensions. © 2022 IXYS All rights reserved Conditions VR = 10 V; IT = 20 A; VD = 800 V di/dt = -20 A/µs; dv/dt = 20 V/µs tp = 300 µs min. typ. 0°C 55 TVJ = 70°C 0.15 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20220623c 2-3 CS20-25moT1 Package TO-268AA (D3Pak) Ratings Symbol Definitions Conditions IRMS RMS current per terminal TVJ virtual junction temperature Top Tstg min. typ. max. Unit 70 A -10 70 °C operation temperature -10 70 °C storage temperature -40 70 °C Weight 4 Fc mounting force with clip dSpp/App dSpb/Apb creepage distance on surface | striking distance through air 20 terminal to terminal terminal to backside g 120 N 9.4 5.6 mm mm Product Marking Logo + ESD IXYS Part No. Date Code Assembly Line yywwL 123456 Assembly Code Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard CS20-25moT1-TUB CS20-25moT1 Tube 30 CS20-25moT1-TUB Outlines TO-268AA (D3Pak) Dim. A A1 A2 b b2 C C2 D D1 E E1 e H L L1 L2 L3 L4 IXYS reserves the right to change limits, test conditions and dimensions. © 2022 IXYS All rights reserved Millimeter min max 4.90 5.10 2.70 2.90 0.02 0.25 1.15 1.45 1.90 2.10 0.40 0.65 1.45 1.60 13.80 14.00 12.40 12.70 15.85 16.05 13.30 13.60 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Data according to IEC 60747and per semiconductor unless otherwise specified Inches min max 0.193 0.201 0.106 0.114 0.001 0.100 0.045 0.057 0.075 0.083 0.016 0.026 0.057 0.063 0.543 0.551 0.488 0.500 0.624 0.632 0.524 0.535 0.215 BSC 0.736 0.752 0.094 0.106 0.047 0.055 0.039 0.045 0.100 BSC 0.150 0.161 20220623c 3-3