CS30-14IO1

CS30-14io1 Thyristor VRRM = 1400 V I TAV = 30 A VT = 1.3 V Single Thyristor Part number CS30-14io1 Backside: anode 2 1 3 Features / Advantages: Applications: Package: TO-247 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129c CS30-14io1 Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1400 I R/D reverse current, drain current VT forward voltage drop TVJ = 25°C 50 µA 2 mA TVJ = 25°C 1.30 V 1.63 V 1.30 V IT = 30 A IT = 60 A IT = 30 A IT = 60 A I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 °C for power loss calculation only thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing V TVJ = 125°C TC = 120 °C RthCH max. Unit 1500 V VR/D = 1400 V average forward current Ptot typ. VR/D = 1400 V I TAV I²t min. 1.71 V T VJ = 150 °C 30 A 47 A TVJ = 150 °C 0.87 V 14.2 mΩ 0.5 K/W 0.3 K/W TC = 25°C 250 W t = 10 ms; (50 Hz), sine TVJ = 45°C 400 A t = 8,3 ms; (60 Hz), sine VR = 0 V 430 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 340 A t = 8,3 ms; (60 Hz), sine VR = 0 V 365 A t = 10 ms; (50 Hz), sine TVJ = 45°C 800 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 770 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 580 A²s 555 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 16 t P = 300 µs pF 10 W 5 W 0.5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 125 °C; f = 50 Hz repetitive, IT = t P = 200 µs; di G /dt = 0.3 A/µs; 90 A IG = 30 A (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C 1 TVJ = -40 °C 1.2 V I GT gate trigger current VD = 6 V TVJ = 25 °C 55 mA TVJ = -40 °C 80 mA VGD gate non-trigger voltage TVJ = 125°C 0.2 V I GD gate non-trigger current 5 mA IL latching current TVJ = 25 °C 150 mA 0.3 A; V = ⅔ VDRM non-repet., I T = 150 A/µs 500 A/µs 1000 V/µs TVJ = 125°C R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs IG = 0.3 A; di G /dt = V 0.3 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 100 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.3 A; di G /dt = VR = 100 V; I T = 0.3 A/µs 30A; V = ⅔ VDRM TVJ =125 °C di/dt = 15 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20191129c CS30-14io1 Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 70 Unit A -40 150 °C -40 125 °C 150 °C 6 Weight MD mounting torque FC mounting force with clip g 0.8 1.2 Nm 20 120 N Product Marking IXYS Logo XXXXXXXXX Part Number Date Code yywwZ 1234 Lot# Location Ordering Standard Ordering Number CS30-14io1 Similar Part CS30-12io1 CS30-16io1 Equivalent Circuits for Simulation I V0 R0 Marking on Product CS30-14io1 Package TO-247AD (3) TO-247AD (3) * on die level Delivery Mode Tube Code No. 466573 Voltage class 1200 1600 T VJ = 150°C Thyristor V 0 max threshold voltage 0.87 V R0 max slope resistance * 11.7 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20191129c CS30-14io1 Outlines TO-247 A E A2 Ø P1 ØP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 3x b b4 C A1 2x e 2 Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129c CS30-14io1 Thyristor 80 400 1000 50 Hz, 80% VRRM VR = 0 V 350 60 300 IT TVJ = 45°C ITSM 40 2 It 250 TVJ = 45°C [A] [A] 200 20 125°C 150°C TVJ = 125°C 150 TVJ = 25°C 0 0,5 1,0 100 1,5 100 2,0 0,01 0,1 1 1 2 t [s] VT [V] 4 5 6 7 8 910 t [ms] Fig. 3 I t versus time (1-10 ms) 1000 1: IGD, TVJ = 150°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 3 2 Fig. 2 Surge overload current Fig. 1 Forward characteristics 10 TVJ = 125°C [A2s] 80 dc = 1 0.5 0.4 0.33 0.17 0.08 60 6 100 VG 1 [V] typ. tgd 23 IT(AV)M Limit 40 5 1 [µs] 4 [A] 10 TVJ = 125°C 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W 0,1 1 10 100 1000 1 10 10000 20 0 100 1000 0 25 IG [mA] IG [mA] Fig. 4 Gate trigger characteristics P(AV) 100 125 150 Fig. 6 Max. forward current at case temperature 0,6 RthHA 0.6 0.8 1.0 2.0 4.0 8.0 dc = 1 50 0.5 0.4 0.33 40 0.17 0.08 75 TC [°C] Fig. 5 Gate controlled delay time 60 50 0,4 ZthJC 30 [K/W] [W] 20 0,2 10 0 0 10 20 30 40 IT(AV) [A] 0 50 100 150 Tamb [°C] © 2019 IXYS all rights reserved 101 102 ti [s] 0.08 0.06 0.01 0.0001 0.2 0.05 0.11 0.02 0.2 0.11 103 104 t [ms] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. 0,0 100 Rthi [K/W] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20191129c CS30-14io1 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129c