CS60-12IO1

CS60-12io1 Thyristor VRRM = 1200 V I TAV = 60 A VT = 1.14 V Single Thyristor Part number CS60-12io1 Backside: anode 2 1 3 Features / Advantages: Applications: Package: PLUS247 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191202c CS60-12io1 Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1200 I R/D reverse current, drain current VT forward voltage drop min. typ. VR/D = 1200 V TVJ = 25°C 200 µA TVJ = 140°C 10 mA IT = TVJ = 25°C 1.18 V 1.44 V 1.14 V IT = 60 A TVJ = 125 °C 60 A I T = 120 A I TAV average forward current TC = 110 °C I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only RthCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current I²t value for fusing V VR/D = 1200 V I T = 120 A Ptot max. Unit 1300 V 1.46 V T VJ = 140 °C 60 A 75 A TVJ = 140 °C 0.82 V 5.3 mΩ 0.32 K/W 0.15 K/W TC = 25°C 360 W t = 10 ms; (50 Hz), sine TVJ = 45°C 1.40 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.51 kA t = 10 ms; (50 Hz), sine TVJ = 140 °C 1.19 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.29 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 9.80 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 9.49 kA²s t = 10 ms; (50 Hz), sine TVJ = 140 °C 7.08 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 140 °C 6.87 kA²s 74 t P = 300 µs pF 10 W 5 W 0.5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 140 °C; f = 50 Hz repetitive, IT = 180 A t P = 200 µs; di G /dt = 0.3 A/µs; (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C TVJ = -40 °C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 100 mA TVJ = -40 °C 200 mA VGD gate non-trigger voltage TVJ = 140°C 0.2 V I GD gate non-trigger current 10 mA IL latching current TVJ = 25 °C 450 mA IG = 0.3 A; V = ⅔ VDRM non-repet., I T = 150 A/µs 60 A 500 A/µs 1000 V/µs TVJ = 140°C R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs 1.5 V IG = 0.45 A; di G /dt = 0.45 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 200 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.45 A; di G /dt = 0.45 A/µs VR = 100 V; I T = 60A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20191202c CS60-12io1 Package Ratings PLUS247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 70 Unit A -40 140 °C -40 125 °C 140 °C 6 Weight FC 20 mounting force with clip d Spp/App creepage distance on surface | striking distance through air d Spb/Apb g 120 N terminal to terminal 5.5 mm terminal to backside 5.5 mm Product Marking IXYS Logo XXXXXXXXX yywwZ Part Number Date Code 1234 Lot# Location Ordering Standard Ordering Number CS60-12io1 Similar Part CS60-14io1 CS60-16io1 Equivalent Circuits for Simulation I V0 R0 Package PLUS247 (3) PLUS247 (3) * on die level Delivery Mode Tube Quantity 30 Code No. 503202 Voltage class 1400 1600 T VJ = 140°C Thyristor V 0 max threshold voltage 0.82 R0 max slope resistance * 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Marking on Product CS60-12io1 V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20191202c CS60-12io1 Outlines PLUS247 A E D2 A2 A Q R A View A - A D D1 4 1 2 3 L1 E1 L A1 b b1 C b2 e Sym. Inches min. max. Millimeter min. max. A A1 A2 b b1 b2 C D D1 D2 E E1 e L L1 Q R 0.190 0.205 0.090 0.100 0.075 0.085 0.045 0.055 0.075 0.084 0.115 0.123 0.024 0.031 0.819 0.840 0.515 0.010 0.053 0.620 0.635 0.530 0.215 BSC 0.780 0.800 0.150 0.170 0.220 0.244 0.170 0.190 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 13.07 0.51 1.35 15.75 16.13 13.45 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 2 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191202c CS60-12io1 Thyristor 120 1200 50 Hz, 80% VRRM VR = 0 V 10000 100 1000 80 TVJ = 45°C ITSM IT 60 TVJ = 45°C I2t 800 TVJ = 125°C [A] [A] 2 600 125°C 150°C 20 TVJ = 25°C 0 0,4 400 0,8 1,2 1000 1,6 0,01 0,1 1 1 3 4 5 6 7 8 910 t [ms] Fig. 2 Surge overload current Fig. 3 I t versus time (1-10 ms) 2 1000 1: IGD, TVJ = 125°C 2 t [s] VT [V] Fig. 1 Forward characteristics 10 [A s] TVJ = 125°C 40 100 dc = 1 0.5 0.4 0.33 0.17 0.08 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 5 80 6 100 4 VG 2 typ. tgd 3 IT(AV)M 60 Limit 1 [µs] [V] [A] 40 10 1 TVJ = 125°C 20 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W 0,1 1 10 100 1000 1 10 10000 0 100 1000 0 25 IG [mA] IG [mA] Fig. 4 Gate trigger characteristics 75 100 125 150 TC [°C] Fig. 5 Gate controlled delay time 100 50 Fig. 6 Max. forward current at case temperature 0,4 dc = 1 0.5 0.4 0.33 0.17 0.08 80 60 RthHA 0.6 0.8 1.0 2.0 4.0 8.0 P(AV) 40 0,3 ZthJC 0,2 Rthi [K/W] [K/W] [W] 0,1 20 0 0 20 40 60 IT(AV) [A] 0 50 100 150 Tamb [°C] © 2019 IXYS all rights reserved 101 102 0.008 0.043 0.039 0.0001 0.04 0.076 0.121 0.57 0.37 103 104 t [ms] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. 0,0 100 ti [s] 0.041 Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20191202c