DAA10EM1800PZ-TRL

DAA10EM1800PZ preliminary Avalanche Rectifier VRRM = 1800 V I FAV = 10 A VF = 1.14 V Single Diode Part number DAA10EM1800PZ Marking on Product: DAA10EM1800PZ Backside: anode 1 3 4 Features / Advantages: Applications: Package: TO-263 (D2Pak-HV) ● Avalanche rated ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● High creepage distance between terminals Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212b DAA10EM1800PZ preliminary Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t value for fusing V TVJ = 25°C 10 µA 0.7 mA TVJ = 25°C 1.21 V 1.43 V 1.14 V IF = 10 A IF = 20 A IF = 10 A IF = 20 A TVJ = 150 °C TC = 150 °C 1.45 V T VJ = 175 °C 10 A TVJ = 175 °C 0.81 V 32 mΩ d = 0.5 1.5 K/W K/W 0.25 TC = 25°C 100 W t = 10 ms; (50 Hz), sine TVJ = 45°C 150 A t = 8,3 ms; (60 Hz), sine VR = 0 V 160 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 130 A t = 8,3 ms; (60 Hz), sine VR = 0 V 140 A t = 10 ms; (50 Hz), sine TVJ = 45°C 115 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 105 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 85 A²s 82 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V junction capacitance VR = 400 V; f = 1 MHz TVJ = 25°C PRSM max. surge reverse dissipation t p = 10 µs TVJ = 175 °C © 2019 IXYS all rights reserved 1800 TVJ = 150°C CJ IXYS reserves the right to change limits, conditions and dimensions. max. Unit 1900 V VR = 1800 V for power loss calculation only R thCH typ. VR = 1800 V rectangular Ptot min. Data according to IEC 60747and per semiconductor unless otherwise specified 4 pF 1.6 kW 20190212b DAA10EM1800PZ preliminary Package Ratings TO-263 (D2Pak-HV) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 max. 35 Unit A -55 175 °C -55 150 °C 150 °C 1.5 Weight FC 20 mounting force with clip d Spp/App typ. Product Marking D A A 10 EM 1800 PZ IXYS Zyyww Logo Assembly Line Date Code N 4.2 mm terminal to backside 4.7 mm Part description XXXXXXXXX Part No. 60 terminal to terminal creepage distance on surface | striking distance through air d Spb/Apb g = = = = = = = Diode Avalanche Rectifier (up to 1800V) Current Rating [A] Single Diode Reverse Voltage [V] TO-263AB (D2Pak) (2HV) 000000 Assembly Code Ordering Standard Alternative Ordering Number DAA10EM1800PZ-TRL DAA10EM1800PZ-TUB Equivalent Circuits for Simulation I V0 R0 Marking on Product DAA10EM1800PZ DAA10EM1800PZ * on die level Delivery Mode Tape & Reel Tube Code No. 513894 523835 T VJ = 175 °C Rectifier V 0 max threshold voltage 0.81 V R0 max slope resistance * 10.2 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 800 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20190212b DAA10EM1800PZ preliminary Outlines TO-263 (D2Pak-HV) Dim. W Supplier Option D1 L1 c2 A1 H D E A 1 4 3 L e1 D2 A2 c 2x e 2x b2 10.92 (0.430) W E1 Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.091 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) 9.02 (0.355) mm (Inches) 2x b A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.3 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 4 Data according to IEC 60747and per semiconductor unless otherwise specified 20190212b