DAA10P1800PZ-TRL

DAA10P1800PZ Avalanche Rectifier VRRM = 2x 1800 V I FAV = 10 A VF = 1.21 V Phase leg Part number DAA10P1800PZ Marking on Product: DAA10P1800PZ Backside: anode/cathode 1 4 3 Features / Advantages: Applications: Package: TO-263 (D2Pak-HV) ● Avalanche rated ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● High creepage distance between terminals Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212e DAA10P1800PZ Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t value for fusing V TVJ = 25°C 10 µA 0.7 mA TVJ = 25°C 1.26 V 1.53 V 1.21 V IF = 10 A IF = 20 A IF = 10 A IF = 20 A TVJ = 150 °C TC = 150 °C 1.57 V T VJ = 175 °C 10 A TVJ = 175 °C 0.82 V 37 mΩ d = 0.5 1.5 K/W K/W 0.25 TC = 25°C 100 W t = 10 ms; (50 Hz), sine TVJ = 45°C 150 A t = 8,3 ms; (60 Hz), sine VR = 0 V 160 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 130 A t = 8,3 ms; (60 Hz), sine VR = 0 V 140 A t = 10 ms; (50 Hz), sine TVJ = 45°C 115 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 105 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 85 A²s 82 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V junction capacitance VR = 400 V; f = 1 MHz TVJ = 25°C PRSM max. surge reverse dissipation t p = 10 µs TVJ = 175 °C © 2019 IXYS all rights reserved 1800 TVJ = 150°C CJ IXYS reserves the right to change limits, conditions and dimensions. max. Unit 1900 V VR = 1800 V for power loss calculation only R thCH typ. VR = 1800 V rectangular Ptot min. Data according to IEC 60747and per semiconductor unless otherwise specified 4 pF 1.6 kW 20190212e DAA10P1800PZ Package Ratings TO-263 (D2Pak-HV) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 max. 35 Unit A -55 175 °C -55 150 °C 150 °C 1.5 Weight FC 20 mounting force with clip d Spp/App typ. Product Marking D A A 10 P 1800 PZ IXYS Zyyww Logo Assembly Line Date Code N 4.2 mm terminal to backside 4.7 mm Part description XXXXXXXXX Part No. 60 terminal to terminal creepage distance on surface | striking distance through air d Spb/Apb g = = = = = = = Diode Avalanche Rectifier (up to 1800V) Current Rating [A] Phase leg Reverse Voltage [V] TO-263AB (D2Pak) (2HV) 000000 Assembly Code Ordering Standard Alternative Ordering Number DAA10P1800PZ-TRL DAA10P1800PZ-TUB Equivalent Circuits for Simulation I V0 R0 Marking on Product DAA10P1800PZ DAA10P1800PZ * on die level Delivery Mode Tape & Reel Tube Code No. 515331 523842 T VJ = 175 °C Rectifier V 0 max threshold voltage 0.82 V R0 max slope resistance * 10.2 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 800 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20190212e DAA10P1800PZ Outlines TO-263 (D2Pak-HV) Dim. W Supplier Option D1 L1 c2 A1 H D E A 1 4 3 L e1 D2 A2 c 2x e 2x b2 10.92 (0.430) 2x b mm (Inches) A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 W E1 Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.3 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.091 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) 9.02 (0.355) All dimensions conform with and/or within JEDEC standard. 2.54 (0.100) Recommended min. foot print 1 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 4 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20190212e DAA10P1800PZ Rectifier 20 100 102 50 Hz, 80%VRRM VR = 0 V 15 TVJ = 45°C 80 IF TVJ = 45°C IFSM It [A] [A s] 2 10 [A] 2 TVJ = 150°C 60 5 TVJ = 150°C TVJ = 25°C TVJ = 125°C TVJ = 150°C 0 0.5 1.0 1.5 40 0.001 2.0 101 0.01 VF [V] 0.1 1 1 3 4 5 6 7 8 910 t [ms] Fig. 3 I2t versus time per diode Fig. 2 Surge overload current Fig. 1 Forward current versus voltage drop per diode 28 18 RthHA = 16 12 10 DC = 1 0.5 0.4 0.33 0.17 0.08 24 4 K/W 8 K/W 10 K/W 12 K/W 16 K/W 20 K/W DC = 1 0.5 0.4 0.33 0.17 0.08 14 Ptot 2 t [s] 20 IF(AV)M 16 [A] [W] 8 12 6 8 4 4 2 0 0 0 2 4 6 8 10 12 0 50 IF(AV)M [A] 100 150 200 0 50 100 150 200 TC [°C] Tamb [°C] Fig. 4 Power dissipation vs. direct output current and ambient temperature Fig. 5 Max. forward current vs. case temperature 1.6 1.2 Constants for ZthJC calculation: ZthJC 0.8 [K/W] 0.4 i Rthi (K/W) ti (s) 1 0.155 0.0005 2 0.332 0.0095 3 0.713 0.17 4 0.3 0.8 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212e