DCG45X1200NA

DCG45X1200NA prelimininary SiC Schottky Diode VRRM = 1200 V IFAV = 2x 25 A Ultra fast switching Zero reverse recovery Part number DCG45X1200NA Backside: isolated UL pending 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) • Ultra fast switching • Zero reverse recovery • Zero forward recovery • Temperature independent switching behavior • Positive temperature coefficient of forward voltage • TVJM = 175°C • Solar inverter • Uninterruptible power supply (UPS) • Welding equipment • Switched-mode power supplies • Medical equipment • High speed rectifier • Isolation Voltage: 3000 V~ • Industry standard outline • RoHS compliant • Epoxy meets UL 94V-0 • Base plate with Aluminium nitride isolation for low thermal resistance • Advanced power cycling Terms & Conditions of Usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, test conditions and dimensions. © 2018 IXYS All rights reserved 20180115a 1-6 DCG45X1200NA prelimininary SiC Diode (per leg) Ratings Symbol Definitions Conditions min. VRSM max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1200 V IR reverse current VR = VRRM TVJ = 25°C TVJ = 175°C 35 65 200 400 µA µA VF forward voltage IF = 10 A IF = 20 A TVJ = 25°C 1.5 1.8 V V IF = 10 A IF = 20 A TVJ = 175°C 2.2 3.0 V V 25 22 A A 44 34 30 A A A 1150 A A IFAV average forward current TC = 80°C TC = 100°C IF25 IF80 IF100 forward current based on typ. VF0 and rF TC = 25°C TC = 80°C TC = 100°C IFSM max forward surge current t = 10 ms,half sine (50 Hz) tP = 10 µs, pulse VF0 threshold voltage rF slope resistance QC total capacitive charge VR = 800 V, IF = 20A dI/dt = 200 A/µs C total capacitance VR = 0 V VR = 400 V VR = 800 V RthJC RthJH thermal resistance junction to case thermal resistance junction to heatsink max. 1200 rectangular, d = 0.5 TVJ = 175°C for power loss calculation TVJ = 25°C VR = 0V V TVJ = 125°C 175°C TVJ = 125°C 175°C 0.80 0.73 57.0 70.5 V V mW mW TVJ = 25°C 100 nC TVJ = 25°C, f = 1 MHz 1500 93 67 pF pF pF 0.9 with heatsink compound; IXYS test setup IXYS reserves the right to change limits, test conditions and dimensions. © 2018 IXYS All rights reserved typ. 1.05 K/W K/W 20180115a 2-6 DCG45X1200NA prelimininary Package Symbol IRMS Outlines SOT-227B (minibloc) Definitions Tstg Top TVJ storage temperature operation temperature virtual junction temperature RMS current Conditions per terminal min. Ratings typ. max. 100 Unit A -40 -40 -40 150 150 175 °C °C °C 1.5 1.3 Nm Nm Weight 30 mounting torque 1) dSpp dSpb creepage distance on surface terminal to terminal terminal to backside 10.5 8.5 mm mm dApp dApb striking distance through air terminal to terminal terminal to backside 3.2 6.8 mm mm VISOL isolation voltage t = 1 second t = 1 minute 3000 2500 V V CP coupling capacity per switch between shorted terminals of diodes and back side metallization 1) screws to heatsink terminal connection screws 50 / 60 Hz, RMS; IISOL < 1 mA pF further information see application note IXAN0073 on www.ixys.com/TechnicalSupport/appnotes.aspx (General / Isolation, Mounting, Soldering, Cooling) Part description Product Marking D = Diode C = SiC G = Extreme fast 45 = Current Rating [A] X = Parallel legs 1200 = Reverse Voltage [V] NA = SOT-227 (minibloc) Part No. Logo Zyyww XXXXX ® abcd Assembly Line DateCode Assembly Code Ordering Part Name Marking on Product Standard DCG45X1200NA DCG45X1200NA Equivalent Circuits for Simulation I g MD V0 R0 Tube 10 Ordering Code 520708 *on die level, typical TVJ = 125°C TVJ = 175°C V0 max threshold voltage 0.80 0.73 V R0 max slope resistance * 57.0 70.5 mW IXYS reserves the right to change limits, test conditions and dimensions. © 2018 IXYS All rights reserved Delivering Mode Base Qty 20180115a 3-6 DCG45X1200NA prelimininary Outlines SOT-227B (minibloc) J Nut M4 DIN 934 Lens Head Screw M4x8 DIN 7985 K Z B H A G Dim. 4 3 1 2 A B C D E F G H J K L M N O P Q R S C M W N * V T D E L F* Q R * Center of each nut pocket S T U V W Z O P U 2 1 3 4 IXYS reserves the right to change limits, test conditions and dimensions. © 2018 IXYS All rights reserved Millimeter min max 31.50 31.88 7.80 8.20 4.09 4.29 4.09 4.29 4.09 4.29 14.91 15.11 30.12 30.30 37.80 38.23 11.68 12.22 8.92 9.60 0.74 0.84 12.50 13.10 25.15 25.42 1.95 2.13 6.20 4.95 26.90 26.54 4.42 3.94 4.55 4.85 24.59 25.25 -0.05 0.10 3.20 5.50 19.81 21.08 2.50 2.70 Inches min max 1.240 1.255 0.307 0.323 0.161 0.169 0.161 0.169 0.161 0.169 0.587 0.595 1.186 1.193 1.488 1.505 0.460 0.481 0.351 0.378 0.029 0.033 0.492 0.516 0.990 1.001 0.077 0.084 0.195 0.244 1.045 1.059 0.155 0.167 0.179 0.191 0.968 0.994 -0.002 0.004 0.126 0.217 0.780 0.830 0.098 0.106 20180115a 4-6 DCG45X1200NA prelimininary SiC Diode (per leg) 40 1.0 TVJ = 25°C 125°C 175°C 30 0.8 0.6 IF IR 20 [A] TVJ = 25°C 125°C 175°C 0.4 [mA] 10 0.2 0 0 1 2 3 0.0 800 4 1000 VF [V] 1200 1400 1600 1800 VR [V] Fig. 1 Typ. forward characteristics. Fig. 2 Typ. reverse characteristics 160 200 10% Duty 30% Duty 50% Duty 70% Duty DC 120 160 Ptot 120 IF(peak) 80 [W] [A] 80 40 40 0 25 0 50 75 100 125 150 50 175 100 TC [°C] 150 TC [°C] Fig. 4 Power derating Fig. 3 Typ. current derating 120 1600 1400 100 1200 TVJ = 25°C 80 1000 QC C 60 800 [nC] [pF] 600 40 400 20 200 0 0 200 400 600 800 1000 VR [V] Fig. 5 Typ. recovery charge vs. reverse voltage IXYS reserves the right to change limits, test conditions and dimensions. © 2018 IXYS All rights reserved 0 0.1 1 10 100 1000 VR [V] Fig. 6 Typ. junction capacitance vs. reverse Voltage 20180115a 5-6 DCG45X1200NA prelimininary SiC Diode (per leg) 1.2 1.0 0.8 ZthJH 0.6 [K/W] 0.4 0.2 0.0 1 10 100 1000 10000 tp [ms] Fig. 7 Typ. transient thermal impedance IXYS reserves the right to change limits, test conditions and dimensions. © 2018 IXYS All rights reserved 20180115a 6-6