DE150-102N02A

DE150-102N02A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 2 A IDM Tc = 25°C, pulse width limited by TJM 12 A IAR Tc = 25°C 1.5 A EAR Tc = 25°C 6 mJ 3 V/ns >200 V/ns 200 W 105 W 3.5 W RthJC 0.71 C/W RthJHS 1.41 C/W ~ dv/dt IS ≤ IDM, di/dt ≤ ≤ 100A/μs, VDD ≤V Tj ≤ 150°C, RG = 0.2Ω Maximum Ratings DSS, IS = 0 PDC PDHS Tc = 25°C Derate .7W/°C above 25°C PDAMB Tc = 25°C Symbol Test Conditions TJ = 25°C unless otherwise specified VDSS VGS = 0 V, ID = 3 ma VGS(th) VDS = VGS, ID = 4 ma IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS TJ = 25°C VGS = 0 TJ = 125°C RDS(on) VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300μS, duty cycle d ≤ 2% gfs VDS = 15 V, ID = 0.5ID25, pulse test V 2.5 0.8 1.6mm (0.063 in) from case for 10 s ID25 = 2A RDS(on) = 7.8 Ω PDC = 200W DRAIN GATE SG1 SG2 SD1 SD2 • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power cycling capability IXYS advanced low Qg process 4.5 V ±100 nA 50 500 μA μA 7.8 Ω S Advantages 2 +175 -55 Tstg 1000 V • • − − • • • 175 TJM Weight max. 1000 -55 TJ TL typ. = Features Characteristic Values min. VDSS +175 Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (