DE475-102N21A
RF Power MOSFET
♦
♦
♦
♦
♦
N-Channel Enhancement Mode
Low Qg and Rg
High dv/dt
Nanosecond Switching
30MHz Maximum Frequency
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
1000
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
1000
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
Tc = 25°C
24
A
IDM
Tc = 25°C, pulse width limited by TJM
144
A
IAR
Tc = 25°C
21
A
EAR
Tc = 25°C
30
mJ
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,
Tj ≤ 150°C, RG = 0.2Ω
5
V/ns
dv/dt
>200
V/ns
1800
W
730
W
4.5
W
RthJC
0.08
C/W
RthJHS
0.20
C/W
IS = 0
PDC
PDHS
Tc = 25°C
Derate 4.0W/°C above 25°C
PDAMB
Tc = 25°C
Symbol
Test Conditions
VDSS
VGS = 0 V, ID = 3 ma
VGS(th)
VDS = VGS, ID = 4 ma
SG1
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
RDS(on)
VGS = 15 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
gfs
VDS = 15 V, ID = 0.5ID25, pulse test
±100
nA
50
1
µA
mA
0.45
Ω
S
+175
-55
Tstg
Weight
V
175
TJM
TL
5.5
12
-55
TJ
max.
V
4.4
1.6mm (0.063 in) from case for 10 s
ID25
=
24 A
RDS(on)
≤
0.45 Ω
PDC
=
1800W
SG2
SD1
SD2
Features
1000
3.5
1000 V
GATE
TJ = 25°C unless otherwise specified
typ.
=
DRAIN
Characteristic Values
min.
VDSS
+175
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
•
•
−
−
•
•
•
cycling capability
IXYS advanced low Qg process
Low gate charge and capacitances
easier to drive
faster switching
Low RDS(on)
Very low insertion inductance (
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