DFE10I600PM

DFE10I600PM FRED VRRM = 600 V I FAV = 10 A t rr = 35 ns Fast Recovery Epitaxial Diode Single Diode Part number DFE10I600PM Backside: isolated 3 1 Features / Advantages: Applications: Package: TO-220FP ● Planar passivated chips ● Low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Isolation Voltage: 2500 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Base plate: Plastic overmolded tab ● Reduced weight Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20201027c DFE10I600PM Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 600 V 600 V VR = 600 V TVJ = 25°C 20 µA VR = 480 V TVJ = 125°C 1.5 mA IF = 10 A TVJ = 25°C 1.53 V IF = 20 A 1.75 V IF = 10 A 1.41 V IF = 20 A TVJ = 150 °C TC = 80 °C rectangular 1.73 V T VJ = 150 °C 10 A TVJ = 150 °C 1.12 V 29 mΩ d = 0.5 for power loss calculation only 4.2 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 400 V f = 1 MHz TVJ = 25°C 5 pF TVJ = 25 °C 2.6 A CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.5 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 10 A; VR = 300 V -di F /dt = 100 A/µs 30 100 W A TVJ = 125 °C 4 A TVJ = 25 °C 65 ns TVJ = 125 °C 110 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20201027c DFE10I600PM Package Ratings TO-220FP Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 20 Unit A -55 150 °C -55 125 °C 150 °C 2 Weight MD mounting torque FC mounting force with clip d Spp/App d Spb/Apb VISOL terminal to terminal 3.2 terminal to backside 2.5 creepage distance on surface | striking distance through air t = 1 second isolation voltage t = 1 minute Product Marking Part Number Logo DateCode Lot# 50/60 Hz, RMS; IISOL ≤ 1 mA g 0.4 0.6 Nm 20 60 N 2.7 mm 2.5 mm 2500 V 2100 V Part description D F E 10 I 600 PM XXXXXX = = = = = = = Diode FRED fast, low VF Current Rating [A] Single Diode Reverse Voltage [V] TO-220ACFP (2) yywwZ 123456 Location Ordering Standard Ordering Number DFE10I600PM Similar Part DSEI8-06A DSEI8-06AS Equivalent Circuits for Simulation I V0 R0 Marking on Product DFE10I600PM Package TO-220AC (2) TO-263AB (D2Pak) (2) * on die level Delivery Mode Tube Code No. 503920 Voltage class 600 600 T VJ = 150°C Fast Diode V 0 max threshold voltage 1.12 V R0 max slope resistance * 25.9 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20201027c DFE10I600PM Outlines TO-220FP A ØP E A1 Q Dim. H D 1 3 L1 A2 d1 L b1 b e c Note: All metal surface are matte pure tin plated except trimmed area. 3 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved A A1 A2 b b1 c D d1 E e H L L1 ØP Q Millimeters min max 4.50 4.90 2.34 2.74 2.56 2.96 0.70 0.90 1.27 1.47 0.45 0.60 15.67 16.07 0 1.10 9.96 10.36 2.54 BSC 6.48 6.88 12.68 13.28 3.03 3.43 3.08 3.28 3.20 3.40 Inches min max 0.177 0.193 0.092 0.108 0.101 0.117 0.028 0.035 0.050 0.058 0.018 0.024 0.617 0.633 0 0.043 0.392 0.408 0.100 BSC 0.255 0.271 0.499 0.523 0.119 0.135 0.121 0.129 0.126 0.134 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20201027c DFE10I600PM Fast Diode 30 1.0 25 0.8 20 Qr IF 0.6 TVJ = 150°C 100°C 10 25°C 0 20 IRM IF = 5 A 10 A 20 A [µC] [A] TVJ = 125°C VR = 300 V TVJ = 125°C VR = 300 V 1 15 [A] 0.4 10 0.2 5 0.0 0 2 IF = 5 A 10 A 20 A 0 1 10 100 1000 0 100 200 300 400 VF [V] -diF /dt [A/µs] -diF /dt [A/µs] Fig. 1 Forward current IF versus max. forward voltage drop VF Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt Fig. 3 Typ. peak reverse current IRM versus -diF /dt 0.4 1.4 TVJ = 125°C VR = 300 V 1.2 0.3 20 1000 16 800 tfr VFR 1.0 0.8 0.2 [µs] IRM 0.6 Qr 12 IF = 5 A 10 A 20 A trr Kf 600 TVJ = 125°C IF = 10 A [V] 8 400 0.1 4 0.4 tfr VFR 0.2 0.0 0 [ns] 40 80 120 0 0 160 TVJ [°C] 100 200 300 400 0 0 100 200 300 -diF /dt [A/µs] -diF /dt [A/µs] Fig. 4 Dynamic parameters Qr, IRM versus TVJ 200 Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt 5 Constants for ZthJC calculation: 4 3 ZthJC 2 [k/W] i Rthi (K/W) ti (s) 1 0.270 0.002 2 1.230 0.032 3 1.560 0.226 4 1.140 0.820 1 0 1 10 100 t [ms] 1000 10000 Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20201027c