DGS3-018AS

DGS 3-018AS IFAV = 7A VRRM = 180 V CJunction = 8.8 pF Gallium Arsenide Schottky Rectifier Type Marking on product Circuit Package A = Anode, C = Cathode , TAB = Cathode DGS 3-018AS A 3A180AS C TO-252 AA A C (TAB) A Symbol Conditions Maximum Ratings VRRM/RSM 180 V IFAV TC = 25°C; DC 7 A IFAV TC = 90°C; DC 5 A IFSM TVJ = 45°C; tp = 10 ms (50 Hz); sine 10 A TVJ -55...+175 °C Tstg -55...+150 °C 18 W Ptot TC = 25°C Symbol Conditions ① VF CJ • Low forward voltage • Very high switching speed • Low junction capacity of GaAs - low reverse current peak at turn off • Soft turn off • Temperature independent switching behaviour • High temperature operation capability • Epoxy meets UL 94V-0 Applications Characteristic Values typ. IR Features VR = VRRM; VR = VRRM; TVJ = 25°C TVJ = 125°C 0.7 IF = 2 A; IF = 2 A; TVJ = 125°C TVJ = 25°C 0.85 0.85 VR = 100 V; TVJ = 125°C 8.8 0.7 RthJC Weight max. 1.1 V V pF 8.5 0.3 mA mA • MHz switched mode power supplies (SMPS) • Small size SMPs • High frequency converters • Resonant converters K/W g IXYS reserve the right to change limits, conditions and dimensions. © 2004 IXYS All rights reserved 0435 Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0% Data according to DIN/IEC 747 and per diode unless otherwise specified 1-2 DGS 3-018AS 10 TO-252 AA 100 pF A CJ IF 1 TVJ = 125°C TVJ = 125°C 25°C 0,1 1 Anode 2 NC 3 Anode 4 Cathode 10 0,01 0,0 0,5 1,0 1,5 VF 5 0,1 V 2,0 Fig. 1typ. forward characteristics 1 10 100 V 1000 VR Fig. 2 typ. junction capacity versus blocking voltage 10 K/W 1 ZthJC Single Pulse 0,1 0,01 Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 b b1 b2 c c1 D D1 E E1 e e1 H L L1 L2 L3 2.19 2.38 0.89 1.14 0 0.13 0.64 0.89 0.76 1.14 5.21 5.46 0.46 0.58 0.46 0.58 5.97 6.22 4.32 5.21 6.35 6.73 4.32 5.21 2.28 BSC 4.57 BSC 9.40 10.42 0.51 1.02 0.64 1.02 0.89 1.27 2.54 2.92 0.086 0.094 0.035 0.045 0 0.005 0.025 0.035 0.030 0.045 0.205 0.215 0.018 0.023 0.018 0.023 0.235 0.245 0.170 0.205 0.250 0.265 0.170 0.205 0.090 BSC 0.180 BSC 0.370 0.410 0.020 0.040 0.025 0.040 0.035 0.050 0.100 0.115 DGS 3-018AS 0,00001 0,0001 0,001 0,01 0,1 1 s 10 t Fig. 3 typ. thermal impedance junction to case Note: explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium Arsenide Schottky diodes: turn on characteristics Rectifier Diode by majority + minority carriers VF (IF) extraction of excess carriers causes temperature dependant reverse recovery (trr, IRM, Qrr) delayed saturation leads to VFR GaAs Schottky Diode by majority carriers only VF (IF), see Fig. 1 reverse current charges junction capacity CJ, see Fig. 2; not temperature dependant no turn on overvoltage peak IXYS reserve the right to change limits, conditions and dimensions. © 2004 IXYS All rights reserved 0435 conduction forward characteristics turn off characteristics 2-2