DH20-18A

DH20-18A preliminary Sonic Fast Recovery Diode VRRM = 1800 V I FAV = 20 A t rr = 300 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DH20-18A Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200213d DH20-18A preliminary Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 1800 V 1800 V VR = 1800 V TVJ = 25°C 50 µA VR = 1800 V TVJ = 125°C 0.2 mA IF = 20 A TVJ = 25°C 2.24 V IF = 40 A 2.83 V IF = 20 A 2.35 V IF = 40 A TVJ = 125 °C TC = 95 °C rectangular 3.25 V T VJ = 150 °C 20 A TVJ = 150 °C 1.44 V 43 mΩ d = 0.5 for power loss calculation only 0.9 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 900 V f = 1 MHz TVJ = 25°C 7 pF TVJ = 25 °C 22 A CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.3 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 20 A; VR = 900 V -di F /dt = 400 A/µs 140 150 W A TVJ = 125 °C 25 A TVJ = 25 °C 300 ns TVJ = 125 °C 550 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20200213d DH20-18A preliminary Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 70 Unit A -55 150 °C -55 125 °C 150 °C 6 Weight MD mounting torque FC mounting force with clip g 0.8 1.2 Nm 20 120 N Product Marking IXYS Logo XXXXXXXXX Part Number Date Code yywwZ 1234 Lot# Location Ordering Standard Ordering Number DH20-18A Equivalent Circuits for Simulation I V0 R0 * on die level Delivery Mode Tube Quantity 30 Code No. 499730 T VJ = 150°C Fast Diode V 0 max threshold voltage 1.44 R0 max slope resistance * 40 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Marking on Product DH20-18A V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20200213d DH20-18A preliminary Outlines TO-247 A E A2 D2 Ø P1 ØP S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 2x b e C A1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.430 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 10.92 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20200213d DH20-18A preliminary Fast Diode 40 8 30 TVJ = 125°C VR = 900 V 7 TVJ = 125°C 40 TVJ = 125°C VR = 900 V 40 A 20 A TVJ = 25°C 6 IF Qrr 20 [A] 10 A 20 A 5 [μC] IRR 32 [A] 28 4 10 24 10 A 3 0 0.0 20 2 0.5 1.0 1.5 2.0 40 A 36 2.5 3.0 400 VF [V] 600 800 1000 400 diF /dt [A/μs] Fig. 1 Typ. Forward current versus VF Fig. 2 Typ. reverse recov. charge Qrr versus di/dt 800 1000 Fig. 3 Typ. peak reverse current IRM versus di/dt 800 5 700 600 diF /dt [A/μs] TVJ = 125°C TVJ = 125°C VR = 900 V VR = 900 V 20 A 4 600 trr 40 A 500 [ns] 20 A 400 Erec 33 15 8.2 10 A 3 [mJ] 2 5A 300 10 A 200 1 400 600 800 1000 diF /dt [A/μs] Fig. 4 Dynamic parameters Qrr, IRM versus TVJ 400 600 800 1000 diF /dt [A/μs] Fig. 5 Typ. recovery time trr versus di/dt Fig. 6 Typ. recovery energy Erec versus di/dt 1 ZthJC [K/W] 1 2 3 4 0.1 0.001 0.01 0.1 1 Ri 0.231 0.212 0.19 0.267 ti 0.0005 0.004 0.02 0.15 10 tp [s] Fig. 7 Typ. transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200213d