DH2X61-16A

DH2x61-16A Sonic Fast Recovery Diode VRRM = I FAV = 2x t rr = 1600 V 60 A 230 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DH2x61-16A Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. © 2016 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20160916c DH2x61-16A Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1600 IR reverse current, drain current VF forward voltage drop min. typ. VR = 1600 V TVJ = 25°C 200 µA TVJ = 125°C 2 mA IF = TVJ = 25°C 2.01 V 2.51 V 2.02 V IF = 60 A TVJ = 125 °C 60 A I F = 120 A average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case V VR = 1600 V I F = 120 A I FAV max. Unit 1600 V TC = 55 °C rectangular 2.71 V T VJ = 150 °C 60 A TVJ = 150 °C 1.28 V 11.1 mΩ d = 0.5 for power loss calculation only 0.6 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 1200 V f = 1 MHz TVJ = 25°C 32 pF TVJ = 25 °C 60 A CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.10 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2016 IXYS all rights reserved 60 A; VR = 1200 V -di F /dt = 800 A/µs 200 700 W A TVJ = 100 °C 70 A TVJ = 25 °C 230 ns TVJ = 100 °C 350 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20160916c DH2x61-16A Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 100 Unit A -40 150 °C -40 125 °C 150 °C 30 Weight g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL terminal to terminal 10.5 terminal to backside 8.6 t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL ≤ 1 mA 3.2 mm 6.8 mm 3000 V 2500 V Product Marking Part No. Logo XXXXX ® Zyyww abcd Assembly Line DateCode Ordering Standard Assembly Code Ordering Number DH2x61-16A Similar Part DH2x60-18A DH2x61-18A Equivalent Circuits for Simulation I V0 R0 Marking on Product DH2x61-16A Package SOT-227B (minibloc) SOT-227B (minibloc) * on die level Delivery Mode Tube Code No. 511261 Voltage class 1800 1800 T VJ = 150 °C Fast Diode V 0 max threshold voltage 1.28 V R0 max slope resistance * 9.3 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2016 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20160916c DH2x61-16A Outlines SOT-227B (minibloc) 2 1 3 4 IXYS reserves the right to change limits, conditions and dimensions. © 2016 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20160916c DH2x61-16A Fast Diode 140 40 100 TVJ = 100°C TVJ = 100°C 120 VR = 1200 V VR = 1200 V 80 30 100 IF 80 IF = 60 A Qr IF = 60 A IRM 60 20 [A] 60 [A] 40 [nC] 40 10 TVJ = 125°C 20 20 TVJ = 25°C 0 0 1 2 0 100 3 0 1000 VF [V] 0 400 -diF /dt [A/µs] Fig. 1 Typ. rward current IF versus VF Fig. 2 Typ. reverse recovery charge Qr versus -diF /dt 2.0 1400 1200 1600 Fig. 3 Typ. peak reverse current IRM versus -diF /dt 150 2.5 TVJ = 100°C TVJ = 100°C VR = 1200 V VR = 1200 V 1200 1.5 800 -diF /dt [A/µs] 120 2.0 90 1.5 1000 tfr trr 800 Kf 1.0 VFR [µs] 0.5 IRM [ns] 600 Qr 400 IF = 60 A [V] 60 1.0 tfr 30 0.0 0 0 40 80 120 160 0 0 TVJ [°C] 400 800 1200 1600 0 -diF /dt [A/µs] Fig. 4 Dynamic parameters Qr, IRM versus TVJ 0.5 VFR 200 200 400 600 800 0.0 1000 diF /dt [A/µs] Fig. 6 Typ. peak forward voltage VFR & typ. forward recovery time tfr versus diF /dt Fig. 5 Typ. recovery time trr versus -diF /dt 100 Constants for ZthJC calculation: ZthJC -1 10 [K/W] 10-2 10-3 10-2 10-1 100 i Rthi (K/W) ti (s) 1 0.212 0.0055 2 0.248 0.0092 3 0.063 0.0007 4 0.077 0.0391 101 t [s] Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2016 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20160916c