DH60-16A

DH60-16A Sonic Fast Recovery Diode VRRM = 1600 V I FAV = 60 A t rr = 230 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DH60-16A Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200213d DH60-16A Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1600 IR reverse current, drain current VF forward voltage drop min. typ. VR = 1600 V TVJ = 25°C 200 µA TVJ = 125°C 2 mA IF = TVJ = 25°C 2.04 V 2.57 V 2.03 V IF = 60 A TVJ = 125 °C 60 A I F = 120 A average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case V VR = 1600 V I F = 120 A I FAV max. Unit 1600 V TC = 100 °C rectangular 2.73 V T VJ = 150 °C 60 A TVJ = 150 °C 1.28 V 12 mΩ d = 0.5 for power loss calculation only 0.3 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 1200 V f = 1 MHz TVJ = 25°C 32 pF TVJ = 25 °C 60 A CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.3 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 60 A; VR = 1200 V -di F /dt = 800 A/µs 415 700 W A TVJ = 100 °C 70 A TVJ = 25 °C 230 ns TVJ = 100 °C 350 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20200213d DH60-16A Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 70 Unit A -55 150 °C -55 125 °C 150 °C 6 Weight MD mounting torque FC mounting force with clip g 0.8 1.2 Nm 20 120 N Product Marking IXYS Logo XXXXXXXXX Part Number Date Code yywwZ 1234 Lot# Location Ordering Standard Ordering Number DH60-16A Similar Part DH60-14A DH60-18A Equivalent Circuits for Simulation I V0 R0 Marking on Product DH60-16A Package TO-247AD (2) TO-247AD (2) * on die level Delivery Mode Tube Code No. 496545 Voltage class 1400 1800 T VJ = 150°C Fast Diode V 0 max threshold voltage 1.28 V R0 max slope resistance * 9.5 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20200213d DH60-16A Outlines TO-247 A E A2 D2 Ø P1 ØP S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 2x b e C A1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.430 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 10.92 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20200213d DH60-16A Fast Diode 140 40 100 TVJ = 100°C TVJ = 100°C 120 VR = 1200 V VR = 1200 V 80 30 100 IF 80 IF = 60 A Qr [A] 60 IF = 60 A IRM 60 20 [A] 40 [µC] 40 10 TVJ = 125°C 20 20 TVJ = 25°C 0 0 1 2 0 100 3 0 1000 VF [V] 0 400 -diF /dt [A/µs] Fig. 1 Typ. forrward current IF versus VF Fig. 2 Typ. reverse recovery charge Qr versus -diF /dt 1400 2.0 1200 1600 Fig. 3 Typ. peak reverse current IRM versus -diF /dt 150 2.5 TVJ = 100°C TVJ = 100°C VR = 1200 V VR = 1200 V 1200 1.5 800 -diF /dt [A/µs] 120 2.0 VFR 90 1.5 1000 tfr trr 800 [µs] Kf 1.0 0.5 IRM [ns] 600 Qr 400 IF = 60 A [V] 60 1.0 tfr 30 0.0 0 0 40 80 120 160 0 0 TVJ [°C] 400 800 1200 1600 0 200 -diF /dt [A/µs] Fig. 4 Dynamic parameters Qr, IRM versus TVJ 0.5 VFR 200 400 600 800 0.0 1000 diF /dt [A/µs] Fig. 6 Typ. peak forward voltage VFR & typ. forward recovery time tfr versus diF /dt Fig. 5 Typ. recovery time trr versus -diF /dt 0.4 0.3 ZthJC i 1 2 3 0.2 [K/W] Ri 0.021 0.11 0.169 i 0.0093 0.038 0.274 0.1 0.0 0.001 0.01 0.1 1 10 t [s] Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200213d