DHG100X1200NA

DHG100X1200NA preliminary Sonic Fast Recovery Diode VRRM = 1200 V I FAV = 2x t rr = 50 A 200 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DHG100X1200NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200213c DHG100X1200NA preliminary Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1200 IR reverse current, drain current VR = 1200 V TVJ = 25°C 100 µA VR = 1200 V TVJ = 125°C 1.2 mA IF = TVJ = 25°C 2.16 V 2.78 V 2.13 V VF forward voltage drop min. 50 A typ. I F = 100 A IF = TVJ = 125 °C 50 A I F = 100 A I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 65 °C rectangular max. Unit 1200 V V 2.97 V T VJ = 150 °C 50 A TVJ = 150 °C 1.26 V 15.3 mΩ d = 0.5 for power loss calculation only 0.6 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 600 V f = 1 MHz TVJ = 25°C 27 pF TVJ = 25 °C 45 A CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.1 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 60 A; VR = 600 V -di F /dt = 1200 A/µs 200 500 W A TVJ = 125 °C 60 A TVJ = 25 °C 200 ns TVJ = 125 °C 350 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20200213c DHG100X1200NA preliminary Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 100 Unit A -40 150 °C -40 125 °C 150 °C 30 Weight g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm d Spp/App d Spb/Apb VISOL Product Marking Logo XXXXX ® yywwZ 123456 Date Code Location Ordering Standard 8.6 threshold voltage R0 max slope resistance * mm 6.8 mm 3000 V 2500 V D H G 100 X 1200 NA = = = = = = = Diode Sonic Fast Recovery Diode extreme fast Current Rating [A] Parallel legs Reverse Voltage [V] SOT-227B (minibloc) Lot# Ordering Number DHG100X1200NA R0 V 0 max 50/60 Hz, RMS; IISOL ≤ 1 mA 3.2 Part description Part Number UL Equivalent Circuits for Simulation V0 10.5 t = 1 second isolation voltage t = 1 minute I terminal to terminal terminal to backside creepage distance on surface | striking distance through air * on die level Delivery Mode Tube Quantity 10 Code No. 507759 T VJ = 150°C Fast Diode 1.26 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Marking on Product DHG100X1200NA V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20200213c DHG100X1200NA preliminary Outlines SOT-227B (minibloc) 2 1 3 4 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200213c DHG100X1200NA preliminary Fast Diode 120 12 90 TVJ = 125°C VR = 600 V 100 80 TVJ = 125°C VR = 600 V 120 A 120 A 10 80 70 Qrr IF 60 IRR 60 A 8 [A] [μC] 60 A 60 [A] 40 30 A 50 TVJ = 125°C 6 20 TVJ = 25°C 0 0.0 0.5 1.0 40 30 A 1.5 2.0 2.5 4 600 3.0 VF [ V ] 800 1000 30 600 1200 Fig. 1 Typ. Forward current versus VF 800 1000 1200 diF /dt [A/μs] diF /dt [A/μs] Fig. 3 Typ. peak reverse current IRM versus di/dt Fig. 2 Typ. reverse recov. charge Qrr versus di/dt 700 4.0 TVJ = 125°C TVJ = 125°C VR = 600 V VR = 600 V 600 120 A 3.2 trr 500 Erec 60 A 2.4 [ns] [mJ] 400 120 A 60 A 30 A 1.6 300 30 A 200 600 800 1000 0.8 600 1200 diF /dt [A/μs] 1000 1200 diF /dt [A/μs] Fig. 5 Typ. recovery time trr versus di/dt Fig. 4 Dynamic parameters Qrr, IRM versus TVJ 800 Fig. 6 Typ. recovery energy Erec versus di/dt 1 ZthJC 0.1 [K/W] 0.01 0.001 i 1 2 3 4 0.01 0.1 1 Ri 0.137 0.1 0.233 0.130 i 0.0025 0.03 0.03 0.08 10 tp [s] Fig. 7 Typ. transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200213c