DHG100X600NA
advanced
Sonic Fast Recovery Diode
VRRM
=
600 V
I FAV
= 2x
50 A
t rr
=
35 ns
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Parallel legs
Part number
DHG100X600NA
Backside: Isolated
2
1
3
4
Features / Advantages:
Applications:
Package: SOT-227B (minibloc)
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
● Isolation Voltage: 3000 V~
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130829a
DHG100X600NA
advanced
Ratings
Fast Diode
Conditions
Symbol
VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
max.
600
Unit
V
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
600
V
IR
reverse current, drain current
VR = 600 V
TVJ = 25°C
200
µA
VR = 600 V
TVJ = 125°C
4
mA
TVJ = 25°C
2.20
V
2.95
V
2.18
V
VF
IF =
forward voltage drop
min.
50 A
typ.
I F = 100 A
IF =
TVJ = 125 °C
50 A
I F = 100 A
I FAV
average forward current
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
TC = 60°C
rectangular
3.10
V
T VJ = 150 °C
50
A
TVJ = 150 °C
1.20
V
d = 0.5
for power loss calculation only
19
mΩ
0.6
K/W
R thCH
thermal resistance case to heatsink
Ptot
total power dissipation
I FSM
max. forward surge current
t = 10 ms; (50 Hz), sine; VR = 0 V
TVJ = 45°C
CJ
junction capacitance
VR = 400 V f = 1 MHz
TVJ = 25°C
47
pF
I RM
max. reverse recovery current
TVJ = 25 °C
20
A
t rr
reverse recovery time
IF =
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
K/W
0.10
TC = 25°C
50 A; VR = 400 V
-di F /dt = 1200 A/µs
210
430
W
A
TVJ = 125°C
tbd
A
TVJ = 25 °C
35
ns
TVJ = 125°C
tbd
ns
Data according to IEC 60747and per semiconductor unless otherwise specified
20130829a
DHG100X600NA
advanced
Package
Ratings
SOT-227B (minibloc)
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
Tstg
storage temperature
T VJ
virtual junction temperature
min.
typ.
max.
150
Unit
A
-40
150
°C
-40
150
°C
Weight
30
MD
mounting torque
MT
terminal torque
d Spp/App
VISOL
t = 1 minute
XXXXX ®
abcd
Assembly Line
DateCode
Ordering
Standard
V0
R0
terminal to backside
8.6
6.8
mm
3000
V
2500
V
=
=
=
=
=
=
=
Diode
Sonic Fast Recovery Diode
extreme fast
Current Rating [A]
Parallel legs
Reverse Voltage [V]
SOT-227B (minibloc)
Part Number
DHG100X600NA
Marking on Product
DHG100X600NA
* on die level
Delivery Mode
Tube
Quantity
10
Code No.
510840
T VJ = 150 °C
Fast
Diode
V 0 max
threshold voltage
1.2
V
R 0 max
slope resistance *
17
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Nm
mm
Assembly Code
Equivalent Circuits for Simulation
I
1.5
3.2
50/60 Hz, RMS; IISOL ≤ 1 mA
D
H
G
100
X
600
NA
Part No.
Zyyww
1.1
Nm
Part number
Product Marking
Logo
1.5
10.5
t = 1 second
isolation voltage
1.1
terminal to terminal
creepage distance on surface | striking distance through air
d Spb/Apb
g
Data according to IEC 60747and per semiconductor unless otherwise specified
20130829a
DHG100X600NA
advanced
Outlines SOT-227B (minibloc)
2
1
3
4
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130829a
Mouser Electronics
Authorized Distributor
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IXYS:
DHG100X600NA
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