DHG10I1200PA

DHG10I1200PA preliminary Sonic Fast Recovery Diode VRRM = 1200 V I FAV = 10 A t rr = 200 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DHG10I1200PA Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200213b DHG10I1200PA preliminary Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 1200 V 1200 V VR = 1200 V TVJ = 25°C 15 µA VR = 1200 V TVJ = 125°C 0.2 mA IF = 10 A TVJ = 25°C 2.22 V IF = 20 A 2.93 V IF = 10 A 2.23 V IF = 20 A TVJ = 125 °C TC = 105 °C rectangular 3.14 V T VJ = 150 °C 10 A TVJ = 150 °C 1.25 V 90 mΩ d = 0.5 for power loss calculation only 1.5 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 600 V f = 1 MHz TVJ = 25°C 4 pF TVJ = 25 °C 9 A TVJ = 125 °C 10.5 A TVJ = 25 °C 200 ns TVJ = 125 °C 350 ns CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.5 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 10 A; VR = 600 V -di F /dt = 250 A/µs 85 60 Data according to IEC 60747and per semiconductor unless otherwise specified W A 20200213b DHG10I1200PA preliminary Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 150 °C -55 125 °C 150 °C 2 Weight MD mounting torque FC mounting force with clip Product Marking Part Number Logo Date Code Lot # g 0.4 0.6 Nm 20 60 N Part description D H G 10 I 1200 PA XXXXXX = = = = = = = Diode Sonic Fast Recovery Diode extreme fast Current Rating [A] Single Diode Reverse Voltage [V] TO-220AC (2) yywwZ 123456 Location Ordering Standard Ordering Number DHG10I1200PA Similar Part DHG10I1200PM Equivalent Circuits for Simulation I V0 R0 Package TO-220ACFP (2) * on die level Delivery Mode Tube Quantity 50 Code No. 505273 Voltage class 1200 T VJ = 150°C Fast Diode V 0 max threshold voltage 1.25 R0 max slope resistance * 87 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Marking on Product DHG10I1200PA V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20200213b DHG10I1200PA preliminary Outlines TO-220 A = supplier option H1 ØP D 4 3 L1 1 L 2x b2 2x b C e A2 3 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 5.08 5.85 10.66 BSC 6.85 0.390 0.200 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A1 Q E Dim. 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20200213b DHG10I1200PA preliminary Fast Diode 20 2.4 24 TVJ = 125°C TVJ = 125°C VR = 600 V VR = 600 V 2.0 20 A 20 15 20 A 1.6 Qrr IF 10 1.2 [A] 5A [μC] 5 TVJ = 25°C 0.5 1.0 5A [A] 12 0.8 TVJ = 125°C 0 0.0 10 A IRM 16 10 A 8 0.4 1.5 2.0 2.5 0.0 200 250 300 350 400 450 500 3.0 VF [V] 4 200 250 300 350 400 450 500 diF /dt [A/μs] Fig. 1 Typ. Forward current versus VF diF /dt [A/μs] Fig. 3 Typ. peak reverse current IRM versus di/dt Fig. 2 Typ. reverse recov. charge Qrr versus di/dt 500 0.6 20 A TVJ = 125°C TVJ = 125°C 20 A VR = 600 V VR = 600 V 0.5 400 10 A trr Erec 300 [ns] 10 A [mJ] 0.3 5A 200 5A 0.2 100 200 250 300 350 400 450 500 diF /dt [A/μs] Fig. 4 Dynamic parameters Qrr, IRM versus TVJ 0.4 0.1 200 250 300 350 400 450 500 diF /dt [A/μs] Fig. 5 Typ. recovery time trr versus di/dt Fig. 6 Typ. recovery energy Erec versus di/dt 10 ZthJC 1 [K/W] 0.1 0.001 Ri 0.385 0.355 0.315 0.445 0.01 0.1 1 i 0.0005 0.004 0.02 0.15 10 tP [s] Fig. 7 Typ. transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200213b