DHG10I1200PM
preliminary
Sonic Fast Recovery Diode
VRRM
=
1200 V
I FAV
=
10 A
t rr
=
75 ns
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DHG10I1200PM
Backside: isolated
3
1
Features / Advantages:
Applications:
Package: TO-220FP
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
● Isolation Voltage: 2500 V~
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Soldering pins for PCB mounting
● Base plate: Plastic overmolded tab
● Reduced weight
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126a
DHG10I1200PM
preliminary
Ratings
Fast Diode
Conditions
Symbol
VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
IR
reverse current, drain current
VF
forward voltage drop
I FAV
average forward current
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
min.
typ.
max. Unit
1200
V
1200
V
VR = 1200 V
TVJ = 25°C
15
µA
VR = 1200 V
TVJ = 125°C
1.2
mA
IF =
10 A
TVJ = 25°C
2.22
V
IF =
20 A
2.92
V
IF =
10 A
2.13
V
IF =
20 A
TVJ = 125 °C
TC = 30 °C
rectangular
3.06
V
T VJ = 150 °C
10
A
TVJ = 150 °C
1.09
V
94
mΩ
d = 0.5
for power loss calculation only
4 K/W
K/W
R thCH
thermal resistance case to heatsink
Ptot
total power dissipation
I FSM
max. forward surge current
t = 10 ms; (50 Hz), sine; VR = 0 V
TVJ = 45°C
VR = 600 V f = 1 MHz
TVJ = 25°C
4
pF
TVJ = 25 °C
8
A
CJ
junction capacitance
I RM
max. reverse recovery current
t rr
reverse recovery time
0.50
TC = 25°C
IF =
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
10 A; VR = 800 V
-di F /dt = 350 A/µs
30
65
W
A
°C
tbd
A
TVJ = 25 °C
75
ns
TVJ =
tbd
ns
TVJ =
°C
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126a
DHG10I1200PM
preliminary
Package
Ratings
TO-220FP
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-55
typ.
max.
35
Unit
A
-55
150
°C
-55
125
°C
150
°C
2
Weight
MD
mounting torque
FC
mounting force with clip
d Spp/App
d Spb/Apb
VISOL
terminal to terminal
3.2
terminal to backside
2.5
creepage distance on surface | striking distance through air
t = 1 second
isolation voltage
t = 1 minute
Product Marking
Part Number
Logo
DateCode
Assembly Code
50/60 Hz, RMS; IISOL ≤ 1 mA
g
0.4
0.6
Nm
20
60
N
2.7
mm
2.5
mm
2500
V
2100
V
Part description
D
H
G
10
I
1200
PM
abcdef
=
=
=
=
=
=
=
Diode
Sonic Fast Recovery Diode
extreme fast
Current Rating [A]
Single Diode
Reverse Voltage [V]
TO-220ACFP (2)
YYWW Z
XXXXXX
Assembly Line
Ordering
Standard
Ordering Number
DHG10I1200PM
Similar Part
DHG10I1200PA
Equivalent Circuits for Simulation
I
V0
R0
Package
TO-220AC (2)
* on die level
Delivery Mode
Tube
Quantity
50
Code No.
503672
Voltage class
1200
T VJ = 150 °C
Fast
Diode
V 0 max
threshold voltage
1.09
R0 max
slope resistance *
91
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Marking on Product
DHG10I1200PM
V
mΩ
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126a
DHG10I1200PM
preliminary
Outlines TO-220FP
A
ØP
E
A1
Q
Dim.
H
D
1
3
L1
A2
d1
L
b1
b
e
c
Note:
All metal surface are
matte pure tin plated
except trimmed area.
3
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
A
A1
A2
b
b1
c
D
d1
E
e
H
L
L1
ØP
Q
Millimeters
min
max
4.50
4.90
2.34
2.74
2.56
2.96
0.70
0.90
1.27
1.47
0.45
0.60
15.67 16.07
0
1.10
9.96 10.36
2.54 BSC
6.48
6.88
12.68 13.28
3.03
3.43
3.08
3.28
3.20
3.40
Inches
min
max
0.177 0.193
0.092 0.108
0.101 0.117
0.028 0.035
0.050 0.058
0.018 0.024
0.617 0.633
0
0.043
0.392 0.408
0.100 BSC
0.255 0.271
0.499 0.523
0.119 0.135
0.121 0.129
0.126 0.134
1
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126a
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