DHG10I1200PM

DHG10I1200PM preliminary Sonic Fast Recovery Diode VRRM = 1200 V I FAV = 10 A t rr = 75 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DHG10I1200PM Backside: isolated 3 1 Features / Advantages: Applications: Package: TO-220FP ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Isolation Voltage: 2500 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Base plate: Plastic overmolded tab ● Reduced weight Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a DHG10I1200PM preliminary Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 1200 V 1200 V VR = 1200 V TVJ = 25°C 15 µA VR = 1200 V TVJ = 125°C 1.2 mA IF = 10 A TVJ = 25°C 2.22 V IF = 20 A 2.92 V IF = 10 A 2.13 V IF = 20 A TVJ = 125 °C TC = 30 °C rectangular 3.06 V T VJ = 150 °C 10 A TVJ = 150 °C 1.09 V 94 mΩ d = 0.5 for power loss calculation only 4 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 600 V f = 1 MHz TVJ = 25°C 4 pF TVJ = 25 °C 8 A CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.50 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 10 A; VR = 800 V -di F /dt = 350 A/µs 30 65 W A °C tbd A TVJ = 25 °C 75 ns TVJ = tbd ns TVJ = °C Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a DHG10I1200PM preliminary Package Ratings TO-220FP Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 150 °C -55 125 °C 150 °C 2 Weight MD mounting torque FC mounting force with clip d Spp/App d Spb/Apb VISOL terminal to terminal 3.2 terminal to backside 2.5 creepage distance on surface | striking distance through air t = 1 second isolation voltage t = 1 minute Product Marking Part Number Logo DateCode Assembly Code 50/60 Hz, RMS; IISOL ≤ 1 mA g 0.4 0.6 Nm 20 60 N 2.7 mm 2.5 mm 2500 V 2100 V Part description D H G 10 I 1200 PM abcdef = = = = = = = Diode Sonic Fast Recovery Diode extreme fast Current Rating [A] Single Diode Reverse Voltage [V] TO-220ACFP (2) YYWW Z XXXXXX Assembly Line Ordering Standard Ordering Number DHG10I1200PM Similar Part DHG10I1200PA Equivalent Circuits for Simulation I V0 R0 Package TO-220AC (2) * on die level Delivery Mode Tube Quantity 50 Code No. 503672 Voltage class 1200 T VJ = 150 °C Fast Diode V 0 max threshold voltage 1.09 R0 max slope resistance * 91 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Marking on Product DHG10I1200PM V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a DHG10I1200PM preliminary Outlines TO-220FP A ØP E A1 Q Dim. H D 1 3 L1 A2 d1 L b1 b e c Note: All metal surface are matte pure tin plated except trimmed area. 3 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved A A1 A2 b b1 c D d1 E e H L L1 ØP Q Millimeters min max 4.50 4.90 2.34 2.74 2.56 2.96 0.70 0.90 1.27 1.47 0.45 0.60 15.67 16.07 0 1.10 9.96 10.36 2.54 BSC 6.48 6.88 12.68 13.28 3.03 3.43 3.08 3.28 3.20 3.40 Inches min max 0.177 0.193 0.092 0.108 0.101 0.117 0.028 0.035 0.050 0.058 0.018 0.024 0.617 0.633 0 0.043 0.392 0.408 0.100 BSC 0.255 0.271 0.499 0.523 0.119 0.135 0.121 0.129 0.126 0.134 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a