DHG10I1800PA

DHG10I1800PA Sonic Fast Recovery Diode VRRM = 1800 V I FAV = 10 A t rr = 260 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DHG10I1800PA Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200907d DHG10I1800PA Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 1800 V 1800 V VR = 1800 V TVJ = 25°C 50 µA VR = 1800 V TVJ = 150°C 0.4 mA IF = 10 A TVJ = 25°C 2.27 V IF = 20 A 2.94 V IF = 10 A 2.43 V IF = 20 A TVJ = 150 °C TC = 110 °C rectangular 3.42 V T VJ = 175 °C 10 A TVJ = 175 °C 1.40 V 101 mΩ d = 0.5 for power loss calculation only 1.5 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 900 V f = 1 MHz TVJ = 25°C 3 pF TVJ = 25 °C 15 A TVJ = 150 °C 17.5 A TVJ = 25 °C 260 ns TVJ = 150 °C 350 ns CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.5 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 10 A; VR = 900 V -di F /dt = 350 A/µs 85 60 Data according to IEC 60747and per semiconductor unless otherwise specified W A 20200907d DHG10I1800PA Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 °C -55 150 °C 150 °C 2 Weight MD mounting torque FC mounting force with clip Product Marking Part Number Logo Date Code Lot # g 0.4 0.6 Nm 20 60 N Part description D H G 10 I 1800 PA XXXXXX = = = = = = = Diode Sonic Fast Recovery Diode extreme fast Current Rating [A] Single Diode Reverse Voltage [V] TO-220AC (2) yywwZ 123456 Location Ordering Standard Ordering Number DHG10I1800PA Similar Part DHG10IM1800UZ Equivalent Circuits for Simulation I V0 R0 Marking on Product DHG10I1800PA Package TO-252AA (DPak) (2HV) * on die level Delivery Mode Tube Code No. 508242 Voltage class 1800 T VJ = 175°C Fast Diode V 0 max threshold voltage 1.4 V R0 max slope resistance * 98 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20200907d DHG10I1800PA Outlines TO-220 A = supplier option H1 ØP D 4 3 L1 1 L 2x b2 2x b C e A2 3 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 5.08 5.85 10.66 BSC 6.85 0.390 0.200 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A1 Q E Dim. 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20200907d DHG10I1800PA Fast Diode 20 5 30 TVJ = 150°C TVJ = 150°C VR = 900 V 4 TVJ = 150°C 15 TVJ = 25°C 20 A 10 A VR = 900 V 25 20 A 20 Qrr 3 IF IRM 10 [A] [µC] 2 1A 15 10 A [A] 10 5 1 5 1A 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0 VF [V] 100 200 300 400 500 600 700 0 100 200 300 400 500 600 700 diF /dt [A/µs] Fig. 1 Typ. Forward current versus VF diF /dt [A/µs] Fig. 2 Typ. reverse recov. charge Qrr versus di/dt 1.1 Fig. 3 Typ. peak reverse current IRM versus di/dt 1800 3.0 TVJ = 150°C 1600 TVJ = 150°C VR = 900 V VR = 900 V 2.5 1400 1.0 20 A 1200 Kf 0.9 2.0 trr 1000 Erec [ns] 800 [mJ] 1.5 Irm 600 0.8 400 Qrr 10 A 1.0 20 A 0.5 10 A 200 1A 1A 0.7 0 0 25 50 75 100 125 150 175 0.0 0 Fig. 4 Dynamic parameters Qrr, IRM versus TVJ tfr 100 200 300 400 500 600 700 diF /dt [A/µs] Fig. 5 Typ. recovery time trr versus diF/dt VR = 900 V If = 10 A TVJ = 150°C 300 0 diF /dt [A/µs] TVJ [°C] 400 100 200 300 400 500 600 700 400 1.6 300 1.2 Vfr Vfr tfr 200 200 Fig. 6 Typ. recovery energy Erec versus di/dt ZthJC 0.8 [V] [K/W] [ns] 100 100 0 100 200 300 0 400 Ri 0.385 0.355 0.315 0.445 0.4 0.0 0.001 diF /dt [A/µs] Fig. 7 Typ. peak forward voltage 0.01 0.1 Ti 0.0005 0.0040 0.0200 0.1500 1 tP [s] Fig. 8 Typ. transient thermal impedance junction to case Vfrfr and tfr versus diF/dt IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200907d