DHG30I1200HA
Sonic Fast Recovery Diode
VRRM
=
1200 V
I FAV
=
30 A
t rr
=
200 ns
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DHG30I1200HA
Backside: cathode
3
1
Features / Advantages:
Applications:
Package: TO-247
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20200213b
DHG30I1200HA
Ratings
Fast Diode
Conditions
Symbol
VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
IR
reverse current, drain current
VF
forward voltage drop
I FAV
average forward current
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
min.
typ.
max. Unit
1200
V
1200
V
VR = 1200 V
TVJ = 25°C
50
µA
VR = 1200 V
TVJ = 125°C
0.5
mA
IF =
30 A
TVJ = 25°C
2.26
V
IF =
60 A
3.00
V
IF =
30 A
2.27
V
IF =
60 A
TVJ = 125 °C
TC = 90 °C
rectangular
3.20
V
T VJ = 150 °C
30
A
TVJ = 150 °C
1.25
V
30
mΩ
d = 0.5
for power loss calculation only
0.7 K/W
K/W
R thCH
thermal resistance case to heatsink
Ptot
total power dissipation
I FSM
max. forward surge current
t = 10 ms; (50 Hz), sine; VR = 0 V
TVJ = 45°C
VR = 600 V f = 1 MHz
TVJ = 25°C
11
pF
TVJ = 25 °C
23
A
CJ
junction capacitance
I RM
max. reverse recovery current
t rr
reverse recovery time
0.3
TC = 25°C
IF =
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
30 A; VR = 600 V
-di F /dt = 600 A/µs
180
200
W
A
TVJ = 125 °C
30
A
TVJ = 25 °C
200
ns
TVJ = 125 °C
350
ns
Data according to IEC 60747and per semiconductor unless otherwise specified
20200213b
DHG30I1200HA
Package
Ratings
TO-247
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-55
typ.
max.
70
Unit
A
-55
150
°C
-55
125
°C
150
°C
6
Weight
MD
mounting torque
FC
mounting force with clip
Product Marking
0.8
1.2
Nm
20
120
N
Part description
D
H
G
30
I
1200
HA
IXYS
Logo
g
=
=
=
=
=
=
=
Diode
Sonic Fast Recovery Diode
extreme fast
Current Rating [A]
Single Diode
Reverse Voltage [V]
TO-247AD (2)
XXXXXXXXX
Part Number
Date Code
yywwZ
1234
Lot#
Location
Ordering
Standard
Ordering Number
DHG30I1200HA
Similar Part
DSEP30-12A
DSEP29-12A
DSEP30-12AR
DSEP30-12CR
Equivalent Circuits for Simulation
I
V0
R0
Package
TO-247AD (2)
TO-220AC (2)
ISOPLUS247 (2)
ISOPLUS247 (2)
* on die level
Delivery Mode
Tube
Quantity
30
Code No.
503098
Voltage class
1200
1200
1200
1200
T VJ = 150°C
Fast
Diode
V 0 max
threshold voltage
1.25
R0 max
slope resistance *
27
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Marking on Product
DHG30I1200HA
V
mΩ
Data according to IEC 60747and per semiconductor unless otherwise specified
20200213b
DHG30I1200HA
Outlines TO-247
A
E
A2
D2
Ø P1
ØP
S
Q
D1
D
2x E2
4
1
2
3
L1
E1
L
2x b2
2x b
e
C
A1
3
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Sym.
Inches
min.
max.
Millimeter
min.
max.
A
A1
A2
D
E
E2
e
L
L1
ØP
Q
S
b
b2
b4
c
D1
D2
E1
Ø P1
0.185 0.209
0.087 0.102
0.059 0.098
0.819 0.845
0.610 0.640
0.170 0.216
0.430 BSC
0.780 0.800
0.177
0.140 0.144
0.212 0.244
0.242 BSC
0.039 0.055
0.065 0.094
0.102 0.135
0.015 0.035
0.515
0.020 0.053
0.530
0.29
4.70
5.30
2.21
2.59
1.50
2.49
20.79 21.45
15.48 16.24
4.31
5.48
10.92 BSC
19.80 20.30
4.49
3.55
3.65
5.38
6.19
6.14 BSC
0.99
1.40
1.65
2.39
2.59
3.43
0.38
0.89
13.07
0.51
1.35
13.45
7.39
1
Data according to IEC 60747and per semiconductor unless otherwise specified
20200213b
DHG30I1200HA
Fast Diode
60
IF
7
50
6
40
5
70
TVJ = 125°C
VR = 600 V
60
60 A
Qrr
30
30 A
[μC]
[A]
20
40
30
15 A
10 TVJ = 25°C
2
20
1
1.0
30 A
15 A
3
0.5
60 A
[A]
TVJ = 125°C
0
0.0
VR = 600 V
50
IRR
4
TVJ = 125°C
1.5
2.0
2.5
10
3.0
400
VF [V]
600
800
1000
400
Fig. 1 Typ. Forward current
versus VF
Fig. 2 Typ. reverse recov. charge
Qrr versus di/dt
800
1000
Fig. 3 Typ. peak reverse current
IRM versus di/dt
700
2.0
TVJ = 125°C
TVJ = 125°C
VR = 600 V
VR = 600 V
600
600
diF /dt [A/μs]
diF /dt [A/μs]
1.6
60 A
500
30 A
Erec 1.2
trr
400
[ns]
[mJ]
0.8
15 A
300
60 A
30 A
200
100
200
0.0
400
600
800
1000
400
600
800
1000
diF /dt [A/μs]
diF /dt [A/μs]
Fig. 5 Typ. recovery time
trr versus di/dt
Fig. 4 Dynamic parameters
Qrr, IRM versus TVJ
0.4
15 A
Fig. 6 Typ. recovery energy
Erec versus di/dt
1
ZthJC
[K/W
Ri
0.158
0.118
0.155
0.269
0.1
0.001
0.01
0.1
1
ti
0.0005
0.004
0.02
0.15
10
tP [s]
Fig. 7 Typ. transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20200213b
很抱歉,暂时无法提供与“DHG30I1200HA”相匹配的价格&库存,您可以联系我们找货
免费人工找货- 国内价格
- 1+116.97553
- 3+105.54183
- 4+85.75274
- 9+61.74197