DHG30I600HA

DHG 30 I 600HA advanced V RRM = I FAV = t rr = Sonic-FRD High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number (Marking on product) DHG 30 I 600HA 3 600 V 30 A 35 ns 1 Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) TO-247AD ● Industry standard outline ● Epoxy meets UL 94V-0 ● RoHS compliant Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF Conditions forward voltage I FAV average forward current VF0 rF threshold voltage slope resistance min. thermal resistance junction to case TVJ = 25 °C 600 V TVJ = 25 °C 50 µA TVJ = 125 °C 5 mA I F = 30 A I F = 60 A TVJ = 25 °C 2.36 V I F = 30 A I F = 60 A TVJ = 125 °C 2.20 V V rectangular, d = 0.5 T C = 85 °C 30 A T VJ = 150 °C 1.31 28.6 V mΩ 0.70 K/W V TVJ Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current t rr reverse recovery time CJ junction capacitance EAS non-repetitive avalanche energy I AR repetitive avalanche current VA = 1.5·VR typ.; f = 10 kHz 150 °C = 25 °C -55 180 W t p = 10 ms (50 Hz), sine TVJ = 45 °C 200 A I F = 30 A; TVJ = 25 °C TVJ = 125 °C 12 A A VR = 400 V TVJ = 25 °C TVJ = 125 °C 35 ns ns VR = 300 V; f = 1 MHz TVJ = 25 °C I AS = TVJ = 25 °C TC -diF /dt = 600 A/µs A; L = 100 µH * Data according to IEC 60747and per diode unless otherwise specified pF tbd mJ tbd A 0614 © 2006 IXYS all rights reserved Unit VR = 600 V virtual junction temperature IXYS reserves the right to change limits, conditions and dimensions. max. VR = 600 V for power loss calculation only R thJC typ. DHG 30 I 600HA advanced Ratings Symbol Definition Conditions I RMS RMS current per pin* R thCH thermal resistance case to heatsink MD mounting torque FC mounting force with clip T stg storage temperature min. typ. max. Unit 70 A 0.25 K/W 0.8 1.2 Nm 20 120 N -55 150 °C Weight 6 g * Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Outlines TO-247AD © 2006 IXYS all rights reserved Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 0.780 0.800 20.80 21.46 0.819 0.845 C D 15.75 16.26 0.610 0.640 3.55 3.65 0.140 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.216 0.212 0.244 G H 1.65 - 2.13 4.5 0.065 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.055 0.426 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 * Data according to IEC 60747and per diode unless otherwise specified 0614 IXYS reserves the right to change limits, conditions and dimensions. Dim. Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: DHG30I600HA