DHG30IM600PC

DHG30IM600PC preliminary Sonic Fast Recovery Diode VRRM = 600 V I FAV = 30 A t rr = 40 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DHG30IM600PC Marking on Product: DHG30IM600PC Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-263 (D2Pak) ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20210315f DHG30IM600PC preliminary Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 600 IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 600 V V VR = 600 V TVJ = 25°C 50 µA VR = 600 V TVJ = 125°C 4 mA IF = 30 A TVJ = 25°C 2.27 V IF = 60 A 3.14 V IF = 30 A 2.24 V IF = 60 A TVJ = 125 °C TC = 95 °C rectangular 3.23 V T VJ = 150 °C 30 A TVJ = 150 °C 1.17 V 32 mΩ d = 0.5 for power loss calculation only 0.7 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 400 V f = 1 MHz TVJ = 25°C 16 pF TVJ = 25 °C 13 A TVJ = 125 °C 17 A TVJ = 25 °C 40 ns TVJ = 125 °C 60 ns CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.25 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved 30 A; VR = 400 V -di F /dt = 600 A/µs 180 200 Data according to IEC 60747and per semiconductor unless otherwise specified W A 20210315f DHG30IM600PC preliminary Package Ratings TO-263 (D2Pak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 max. 35 Unit A -55 150 °C -55 125 °C 150 °C 1.5 Weight FC 1) typ. 1) 20 mounting force with clip g 60 N IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. Product Marking Part description D H G 30 IM 600 PC XXXXXXXXX Part Number IXYS yywwZ Logo Date Code Location = = = = = = = Diode Sonic Fast Recovery Diode extreme fast Current Rating [A] Single Diode Reverse Voltage [V] TO-263AB (D2Pak) (2) 123456 Lot# Ordering Standard Alternative Ordering Number DHG30IM600PC-TRL DHG30IM600PC-TUB Similar Part DHG30I600PA DHG30I600HA Equivalent Circuits for Simulation I V0 R0 Package TO-220AC (2) TO-247AD (2) * on die level Delivery Mode Tape & Reel Tube Quantity 800 50 Code No. 503501 525078 Voltage class 600 600 T VJ = 150°C Fast Diode V 0 max threshold voltage 1.17 R0 max slope resistance * 29 IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Marking on Product DHG30IM600PC DHG30IM600PC V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20210315f DHG30IM600PC preliminary Outlines TO-263 (D2Pak) Dim. W A Supplier Option D1 L1 c2 A1 H D E A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 4 L L2 1 2 3 c 2x e 3x b2 10.92 (0.430) mm (Inches) 2x b E1 Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.098 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) 9.02 (0.355) W Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.5 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved 2/4 Data according to IEC 60747and per semiconductor unless otherwise specified 20210315f DHG30IM600PC preliminary Fast Diode 60 1.0 50 30 25 0.8 60 A 40 TVJ = 125°C 60 A VR = 300 V 30 A 15 A 20 Qrr 0.6 IF 30 A IRM 15 A [A] 30 15 [A] [μC] 0.4 20 TVJ = 125°C TVJ = 25°C 10 0.2 10 0 0.0 0.5 1.0 TVJ = 125°C 1.5 2.0 2.5 VR = 300 V 0.0 200 3.0 VF [V] 400 600 800 5 1000 diF /dt [A/μs] Fig. 1 Typ. Forward current versus VF 0 200 400 600 800 1000 diF /dt [A/μs] Fig. 2 Typ. reverse recov. charge Qrr versus di/dt Fig. 3 Typ. peak reverse current IRM versus di/dt 200 TVJ = 125°C 60 A VR = 300 V 160 trr 120 30 A [ns] 80 15 A 40 0 200 400 600 800 1000 diF /dt [A/μs] Fig. 4 Dynamic parameters Qrr, IRM versus TVJ Fig. 5 Typ. recovery time trr versus di/dt Fig. 6 Typ. recovery energy Erec versus di/dt 1 ZthJC [K/W Ri 0.158 0.118 0.155 0.269 0.1 0.001 0.01 0.1 1 ti 0.0005 0.004 0.02 0.15 10 tP [s] Fig. 7 Typ. transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20210315f