DHG40C600HB

DHG40C600HB preliminary Sonic Fast Recovery Diode VRRM = I FAV = 2x 20 A t rr = 40 ns 600 V High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DHG40C600HB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200213b DHG40C600HB preliminary Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 600 V 600 V VR = 600 V TVJ = 25°C 25 µA VR = 600 V TVJ = 125°C 1.5 mA IF = 20 A TVJ = 25°C 2.24 V IF = 40 A 3.15 V IF = 20 A 2.19 V IF = 40 A TVJ = 125 °C TC = 95 °C rectangular 3.21 V T VJ = 150 °C 20 A TVJ = 150 °C 1.12 V 49 mΩ d = 0.5 for power loss calculation only 0.9 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 400 V f = 1 MHz TVJ = 25°C 12 pF TVJ = 25 °C 8 A TVJ = 125 °C 12 A TVJ = 25 °C 40 ns TVJ = 125 °C 60 ns CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.3 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 20 A; VR = 300 V -di F /dt = 450 A/µs 140 150 Data according to IEC 60747and per semiconductor unless otherwise specified W A 20200213b DHG40C600HB preliminary Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 70 Unit A -55 150 °C -55 125 °C 150 °C 1) 6 Weight MD mounting torque FC mounting force with clip Product Marking 0.8 1.2 Nm 20 120 N Part description D H G 40 C 600 HB IXYS Logo g = = = = = = = Diode Sonic Fast Recovery Diode extreme fast Current Rating [A] Common Cathode Reverse Voltage [V] TO-247AD (3) XXXXXXXXX Part Number Date Code yywwZ 1234 Lot# Location Ordering Standard Ordering Number DHG40C600HB Similar Part DHG40C600PB Equivalent Circuits for Simulation I V0 R0 Package TO-220AB (3) * on die level Delivery Mode Tube Quantity 30 Code No. 505145 Voltage class 600 T VJ = 150°C Fast Diode V 0 max threshold voltage 1.12 R0 max slope resistance * 46 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Marking on Product DHG40C600HB V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20200213b DHG40C600HB preliminary Outlines TO-247 A E A2 Ø P1 ØP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 3x b b4 C A1 2x e 1 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 2 Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20200213b DHG40C600HB preliminary Fast Diode 40 0.8 20 TVJ = 125°C 0.7 40 A 30 0.6 IF TVJ = 125°C Qrr 20 0.5 [A] 20 A VR = 300 V 10 A 1.0 [A] 8 TVJ = 25°C 0.5 IRM 0.4 TVJ = 125°C 0 0.0 10 A 16 12 [μC] 10 40 A 20 A VR = 300 V 0.3 1.5 2.0 2.5 0.2 200 3.0 VF [V] 400 600 4 200 800 Fig. 1 Typ. Forward current versus VF 400 600 800 diF /dt [A/μs] diF /dt [A/μs] Fig. 2 Typ. reverse recov. charge Qrr versus di/dt Fig. 3 Typ. peak reverse current IRM versus di/dt 160 TVJ = 125°C 140 VR = 300 V 120 100 trr [ns] 80 60 40 A 40 20 A 10 A 20 0 200 400 600 800 diF /dt [A/μs] Fig. 4 Dynamic parameters Qrr, IRM versus TVJ Fig. 5 Typ. recovery time trr versus di/dt Fig. 6 Typ. recovery energy Erec versus di/dt 1 ZthJC [K/W] 1 2 3 4 0.1 0.001 0.01 0.1 1 Ri 0.231 0.212 0.19 0.267 ti 0.0005 0.004 0.02 0.15 10 tP [s] Fig. 7 Typ. transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200213b