DHG50X600NA

DHG50X600NA advanced Sonic Fast Recovery Diode VRRM = 600 V I FAV = 2x 25 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DHG50X600NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130829a DHG50X600NA advanced Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 600 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 600 V IR reverse current, drain current VR = 600 V TVJ = 25°C 100 µA VR = 600 V TVJ = 125°C 2 mA TVJ = 25°C 2.18 V 2.88 V 2.13 V VF IF = forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. 25 A IF = 50 A IF = 25 A IF = 50 A typ. TVJ = 125 °C TC = 60°C rectangular 3.00 V T VJ = 150 °C 25 A TVJ = 150 °C 1.20 V d = 0.5 for power loss calculation only 36 mΩ 1.2 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C 16 pF I RM max. reverse recovery current TVJ = 25 °C 12 A t rr reverse recovery time IF = IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved K/W 0.10 TC = 25°C 25 A; VR = 400 V -di F /dt = 600 A/µs 105 200 W A TVJ = 125°C tbd A TVJ = 25 °C 35 ns TVJ = 125°C tbd ns Data according to IEC 60747and per semiconductor unless otherwise specified 20130829a DHG50X600NA advanced Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 70 Unit A -40 150 °C -40 150 °C Weight 30 MD mounting torque MT terminal torque d Spp/App VISOL t = 1 minute XXXXX ® abcd Assembly Line DateCode Ordering Standard V0 R0 terminal to backside 8.6 6.8 mm 3000 V 2500 V = = = = = = = Diode Sonic Fast Recovery Diode extreme fast Current Rating [A] Parallel legs Reverse Voltage [V] SOT-227B (minibloc) Part Number DHG50X600NA Marking on Product DHG50X600NA * on die level Delivery Mode Tube Quantity 10 Code No. 510221 T VJ = 150 °C Fast Diode V 0 max threshold voltage 1.2 V R 0 max slope resistance * 34 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Nm mm Assembly Code Equivalent Circuits for Simulation I 1.5 3.2 50/60 Hz, RMS; IISOL ≤ 1 mA D H G 50 X 600 NA Part No. Zyyww 1.1 Nm Part number Product Marking Logo 1.5 10.5 t = 1 second isolation voltage 1.1 terminal to terminal creepage distance on surface | striking distance through air d Spb/Apb g Data according to IEC 60747and per semiconductor unless otherwise specified 20130829a DHG50X600NA advanced Outlines SOT-227B (minibloc) 2 1 3 4 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130829a Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: DHG50X600NA