DHG60I1200HA

DHG60I1200HA preliminary Sonic Fast Recovery Diode VRRM = 1200 V I FAV = 60 A t rr = 200 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DHG60I1200HA Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200213b DHG60I1200HA preliminary Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1200 IR reverse current, drain current VR = 1200 V TVJ = 25°C 100 µA VR = 1200 V TVJ = 125°C 1.2 mA IF = TVJ = 25°C 2.32 V 3.06 V 2.34 V VF forward voltage drop min. 60 A typ. I F = 120 A IF = TVJ = 125 °C 60 A I F = 120 A I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 95 °C rectangular max. Unit 1200 V V 3.37 V T VJ = 150 °C 60 A TVJ = 150 °C 1.25 V 15 mΩ d = 0.5 for power loss calculation only 0.35 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 600 V f = 1 MHz TVJ = 25°C 27 pF TVJ = 25 °C 45 A CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.3 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 60 A; VR = 600 V -di F /dt = 1200 A/µs 360 500 W A TVJ = 125 °C 60 A TVJ = 25 °C 200 ns TVJ = 125 °C 350 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20200213b DHG60I1200HA preliminary Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 70 Unit A -55 150 °C -55 125 °C 150 °C 6 Weight MD mounting torque FC mounting force with clip Product Marking 0.8 1.2 Nm 20 120 N Part description D H G 60 I 1200 HA IXYS Logo g = = = = = = = Diode Sonic Fast Recovery Diode extreme fast Current Rating [A] Single Diode Reverse Voltage [V] TO-247AD (2) XXXXXXXXX Part Number Date Code yywwZ 1234 Lot# Location Ordering Standard Ordering Number DHG60I1200HA Similar Part DSEP60-12A DSEP60-12AR Equivalent Circuits for Simulation I V0 R0 Package TO-247AD (2) ISOPLUS247 (2) * on die level Delivery Mode Tube Quantity 30 Code No. 507752 Voltage class 1200 1200 T VJ = 150°C Fast Diode V 0 max threshold voltage 1.25 R0 max slope resistance * 12 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Marking on Product DHG60I1200HA V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20200213b DHG60I1200HA preliminary Outlines TO-247 A E A2 D2 Ø P1 ØP S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 2x b e C A1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.430 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 10.92 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20200213b DHG60I1200HA preliminary Fast Diode 120 12 90 TVJ = 125°C VR = 600 V 100 80 IRM 60 [µC] 6 [A] 0 0.0 0.5 1.0 4 1.5 2.0 2.5 800 1000 30 600 1200 800 1000 1200 diF /dt [A/µs] diF /dt [A/μs] Fig. 2 Typ. reverse recov. charge Qrr versus di/dt Fig. 3 Typ. peak reverse current IRM versus di/dt VF [V] Fig. 1 Typ. Forward current versus VF 30 A 40 2 600 3.0 60 A 60 50 30 A TVJ = 125°C 120 A [A] 40 20 TVJ = 25°C VR = 600 V 70 60 A 8 Qrr IF 80 120 A 10 TVJ = 125°C 4.0 700 TVJ = 125°C TVJ = 125°C VR = 600 V 120 A VR = 600 V 600 3.2 trr 500 Erec [ns] 400 120 A 60 A 2.4 [mJ] 60 A 30 A 1.6 300 30 A 200 600 800 1000 0.8 600 1200 diF /dt [A/μs] 1000 1200 diF /dt [A/µs] Fig. 5 Typ. recovery time trr versus di/dt Fig. 4 Dynamic parameters Qrr, IRM versus TVJ 800 Fig. 6 Typ. recovery energy Erec versus di/dt 1 ZthJC 0.1 [K/W] 0.01 0.001 Ri 0.08 0.06 0.075 0.135 0.01 0.1 1 i 0.0005 0.004 0.02 0.15 10 tP [s] Fig. 7 Typ. transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200213b