DHH55-36N1F

DHH55-36N1F Sonic Fast Recovery Diode VRRM = 2x 1800 V I FAV = 60 A t rr = 230 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number DHH55-36N1F Backside: Isolated 1 3 5 Features / Advantages: Applications: Package: i4-Pac ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Isolation Voltage: 3000 V~ ● Industry convenient outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Backside: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200211e DHH55-36N1F Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1800 IR reverse current, drain current VF forward voltage drop min. typ. VR = 1800 V TVJ = 25°C 200 µA TVJ = 125°C 2 mA IF = TVJ = 25°C 2.04 V 2.57 V 2.03 V IF = 60 A TVJ = 125 °C 60 A I F = 120 A average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case V VR = 1800 V I F = 120 A I FAV max. Unit 1800 V TC = 50 °C rectangular 2.73 V T VJ = 150 °C 60 A TVJ = 150 °C 1.28 V 12 mΩ d = 0.5 for power loss calculation only 0.6 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 1200 V f = 1 MHz TVJ = 25°C 28 pF TVJ = 25 °C 60 A CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.2 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 60 A; VR = 1200 V -di F /dt = 800 A/µs 210 700 W A TVJ = 100 °C 70 A TVJ = 25 °C 230 ns TVJ = 100 °C 350 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20200211e DHH55-36N1F Package Ratings i4-Pac Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 70 Unit A -55 150 °C -55 125 °C 150 °C 5.5 Weight FC 20 mounting force with clip d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL t = 1 minute 120 N terminal to terminal 5.5 mm terminal to backside 5.1 mm 3000 V 2500 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL ≤ 1 mA Product Marking UL Logo IXYS ® ISOPLUS® Part Number XXXXXXXXX yywwZ Date Code 1234 Location Lot# Ordering Standard Ordering Number DHH55-36N1F Equivalent Circuits for Simulation I V0 R0 Marking on Product DHH55-36N1F * on die level Delivery Mode Tube Code No. 500173 T VJ = 150°C Fast Diode V 0 max threshold voltage 1.28 V R0 max slope resistance * 9.5 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 25 Data according to IEC 60747and per semiconductor unless otherwise specified 20200211e DHH55-36N1F Outlines i4-Pac D2 A A2 E1 Dim. D3 L1 D L D1 R Q E 1 3 c 5 2x e 2x b2 3x b A1 W IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 3 Inches min max 0.190 0.205 0.102 0.118 0.046 0.085 0.045 0.055 0.058 0.068 0.100 0.110 0.020 0.029 0.819 0.840 0.590 0.620 0.065 0.080 0.799 0.815 0.770 0.799 0.660 0.690 0.300 BSC 0.780 0.840 0.083 0.102 0.210 0.244 0.100 0.180 0.004 - Die konvexe Form des Substrates ist typ. < 0.05 mm über der Kunststoffoberfläche der Bauteilunterseite The convexbow of substrate is typ. < 0.05 mm over plastic surface level ofdevice bottom side b4 1 A A1 A2 b b2 b4 c D D1 D2 D3 E E1 e L L1 Q R W Millimeter min max 4.83 5.21 2.59 3.00 1.17 2.16 1.14 1.40 1.47 1.73 2.54 2.79 0.51 0.74 20.80 21.34 14.99 15.75 1.65 2.03 20.30 20.70 19.56 20.29 16.76 17.53 7.62 BSC 19.81 21.34 2.11 2.59 5.33 6.20 4.57 2.54 0.10 - 5 Data according to IEC 60747and per semiconductor unless otherwise specified 20200211e DHH55-36N1F Fast Diode 140 40 100 TVJ = 100°C TVJ = 100°C 120 VR = 1200 V VR = 1200 V 80 30 100 IF 80 IF = 60 A Qr IF = 60 A IRM 60 20 [A] 60 [A] 40 [nC] 40 10 TVJ = 125°C 20 20 TVJ = 25°C 0 0 1 2 0 100 3 0 1000 VF [V] 0 400 -diF /dt [A/µs] Fig. 1 Typ. rward current IF versus VF Fig. 2 Typ. reverse recovery charge Qr versus -diF /dt 2.0 1400 1200 1600 Fig. 3 Typ. peak reverse current IRM versus -diF /dt 150 2.5 TVJ = 100°C TVJ = 100°C VR = 1200 V VR = 1200 V 1200 1.5 800 -diF /dt [A/µs] 120 2.0 90 1.5 1000 tfr trr 800 Kf 1.0 VFR [µs] 0.5 IRM [ns] 600 Qr 400 IF = 60 A [V] 60 1.0 tfr 30 VFR 200 0.0 0 0 40 80 120 160 0 0 TVJ [°C] 400 800 1200 1600 0 -diF /dt [A/µs] Fig. 4 Dynamic parameters Qr, IRM versus TVJ 200 400 600 800 0.5 0.0 1000 diF /dt [A/µs] Fig. 6 Typ. peak forward voltage VFR & typ. forward recovery time tfr versus diF /dt Fig. 5 Typ. recovery time trr versus -diF /dt 100 Constants for ZthJC calculation: ZthJC -1 10 [K/W] 10-2 10-3 10-2 10-1 100 i Rthi (K/W) ti (s) 1 0.212 0.0055 2 0.248 0.0092 3 0.063 0.0007 4 0.077 0.0391 101 t [s] Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200211e