DLA100B1200LB-TRR

DLA100B1200LB 3~ 1~ Rectifier High Efficiency Standard Rectifier VRRM = 1200 V I DAV = 124 A I FSM = 400 A 1~ Rectifier Bridge Part number DLA100B1200LB Marking on Product: DLA100B1200LB Backside: isolated 8 = n/c 4 5 6 9 7 1 2 3 Features / Advantages: Applications: Package: SMPD ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode Bridge for main rectification ● Isolation Voltage: 3000 V~ ● Industry convenient outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Backside: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212b DLA100B1200LB Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current VF forward voltage drop min. typ. 1200 TVJ = 25°C 10 µA VR = 1200 V TVJ = 150°C 0.1 mA IF = TVJ = 25°C 1.23 V 1.45 V 1.15 V IF = 50 A TVJ = 150 °C 50 A I F = 100 A bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case V VR = 1200 V I F = 100 A I DAV max. Unit 1200 V TC = 135 °C 1.44 V T VJ = 175 °C 124 A TVJ = 175 °C 0.75 V 4.2 mΩ 180° sine for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1 K/W K/W 0.40 TC = 25°C 150 W t = 10 ms; (50 Hz), sine TVJ = 45°C 400 A t = 8,3 ms; (60 Hz), sine VR = 0 V 430 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 340 A t = 8,3 ms; (60 Hz), sine VR = 0 V 365 A t = 10 ms; (50 Hz), sine TVJ = 45°C 800 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 770 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 580 A²s 555 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 13 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20190212b DLA100B1200LB Package Ratings SMPD Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 max. 100 Unit A -55 175 °C -55 150 °C 150 °C 8.5 Weight FC 40 mounting force with clip d Spp/App t = 1 minute ~ UL Logo ~ Assembly line N mm terminal to backside 4.0 mm 3000 V 2500 V 50/60 Hz, RMS; IISOL ≤ 1 mA Part description ~ D L A 100 B 1200 LB Backside DCB Part number Date code 130 1.6 t = 1 second isolation voltage g terminal to terminal creepage distance on surface | striking distance through air d Spb/Apb VISOL typ. XXXXXXXXXX yywwA = = = = = = = Diode Low Voltage Standard Rectifier (up to 1200V) Current Rating [A] 1~ Rectifier Bridge Reverse Voltage [V] SMPD-B Data Matrix Code Digits 1 to 19: 20 to 23: 24 to 25: 26 to 31: 32: 33 to 36: Part # Date Code Assembly line Lot # Split Lot Individual # Pin 1 identifier Ordering Standard Alternative Ordering Number DLA100B1200LB-TUB DLA100B1200LB-TRR Equivalent Circuits for Simulation I V0 R0 Marking on Product DLA100B1200LB DLA100B1200LB * on die level Delivery Mode Tube Tape & Reel Code No. 517180 517187 T VJ = 175 °C Rectifier V 0 max threshold voltage 0.51 V R0 max slope resistance * 1.3 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 20 200 Data according to IEC 60747and per semiconductor unless otherwise specified 20190212b DLA100B1200LB Outlines SMPD A(8:1) 2) 5,5 `0,1 (6x) 1 `0,05 0 + 0,15 2° c 0,1 0,5 ` 0,1 1) 18 `0,1 seating plane (3x) 2 `0,05 9 `0,1 2) 4 `0,05 8 9 32,7 ` 0,5 23 `0,2 2 `0,2 7 0,55 `0,1 4,85 ` 0,2 25 `0,2 3) c 0,05 6 5 4 A 3 2 1 Pin number 2,75 `0,1 Notes: 1) potrusion may add 0.2 mm max. on each side 2) additional max. 0.05 mm per side by punching misalignement or overlap of dam bar or bending compression 3) DCB area 10 to 50 µm convex; position of DCB area in relation to plastic rim: ±25 µm (measured 2 mm from Cu rim) 4) terminal plating: 0.2 - 1 µm Ni + 10 - 25 µm Sn (gal v.) cutting edges may be partially free of plating 5,5 ` 0,1 13,5 ` 0,1 16,25 `0,1 19 `0,1 8 = n/c 4 5 6 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 9 7 1 2 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20190212b DLA100B1200LB Rectifier 100 103 500 50 Hz, 80% VRRM 80 TVJ = 45°C 400 TVJ = 150°C TVJ = 45°C 60 IF IFSM [A] I 2t [A2s] [A] TVJ = 150°C 40 300 200 VR = 0 V 125°C 25°C 20 100 0 0.0 0.5 1.0 1.5 0 0.001 2.0 VF [V] Ptot = Power losses of all diodes 160 102 0.01 0.1 100 2 4 5 6 7 8 910 t [ms] Fig. 3 I2t versus time per diode sin. 180° rect. D = 0.5 per diode 100 RthHA: 0.3 K/W 0.7 K/W 1.2 K/W 2 K/W 3 K/W 5 K/W 10 K/W rect. D = 0.5 Ptot 1 Fig. 2 Surge overload current 140 120 1 t [s] Fig. 1 Forward current versus voltage drop per diode 180 TVJ = 150°C [W] 80 80 sin. 180° per diode Id(AV)M 60 [A] 40 60 40 20 20 0 0 0 20 40 60 0 Id(AV)M [A] 20 40 60 80 100 120 140 160 180 200 0 25 50 75 100 125 150 175 TC [°C] Tamb [°C] Fig. 4 Power dissipation vs. bridge output current and ambient temperature Fig. 5 Max. bridge output current vs. case temperature 1.2 1.0 ZthJC Constants for ZthJC calculation: 0.8 K/W i 0.6 0.4 0.2 0.0 0.001 0.01 0.1 1 Rthi [K/W] ti [s] 1 0.09 0.003 2 0.116 0.062 3 0.386 0.1 4 0.128 0.55 10 t [s] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212b