DLA10IM800UC-TRL

DLA10IM800UC High Efficiency Standard Rectifier VRRM = 800 V I FAV = 10 A VF = 1.16 V Single Diode Part number DLA10IM800UC Marking on Product: MARLUI Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-252 (DPak) ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212d DLA10IM800UC Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved max. Unit 900 V 800 V TVJ = 25°C 5 µA VR = 800 V TVJ = 150°C 0.05 mA TVJ = 25°C 1.22 V 1.40 V 1.16 V IF = 10 A IF = 20 A IF = 10 A IF = 20 A TVJ = 150 °C TC = 145 °C 1.45 V T VJ = 175 °C 10 A TVJ = 175 °C 0.84 V 30 mΩ d = 0.5 for power loss calculation only R thCH typ. VR = 800 V rectangular Ptot min. 2 K/W K/W 0.50 TC = 25°C 75 W t = 10 ms; (50 Hz), sine TVJ = 45°C 120 A t = 8,3 ms; (60 Hz), sine VR = 0 V 130 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 100 A t = 8,3 ms; (60 Hz), sine VR = 0 V 110 A t = 10 ms; (50 Hz), sine TVJ = 45°C 72 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 70 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 50 A²s 50 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 3 pF 20190212d DLA10IM800UC Package Ratings TO-252 (DPak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 max. 20 Unit A -55 175 °C -55 150 °C 150 °C 0.3 Weight FC 1) typ. 1) 20 mounting force with clip g 60 N IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. Product Marking Logo Part number Assembly Line Part description D L A 10 IM 800 UC IXYS abcdefg Z YY = = = = = = = Diode High Efficiency Standard Rectifier (up to 1200V) Current Rating [A] Single Diode Reverse Voltage [V] TO-252AA (DPak) WW Date Code Ordering Standard Alternative Ordering Number DLA10IM800UC-TRL DLA10IM800UC-TUB Equivalent Circuits for Simulation I V0 R0 * on die level Delivery Mode Tape & Reel Tube Quantity 2500 70 Code No. 503668 523435 T VJ = 175 °C Rectifier V 0 max threshold voltage 0.84 R0 max slope resistance * 27 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Marking on Product MARLUI MARLUI V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20190212d DLA10IM800UC Outlines TO-252 (DPak) 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 2/4 Data according to IEC 60747and per semiconductor unless otherwise specified 20190212d DLA10IM800UC Rectifier 20 102 100 VR = 0 V 16 80 12 TVJ = 45°C TVJ = 45°C IFSM I 2t IF [A] TVJ = 150°C TVJ = 125°C TVJ = 25°C 8 [A] 2 60 TVJ = 150°C [A s] TVJ = 150°C 4 0 0.5 1.0 50 Hz, 80% VRRM 40 0.001 0.01 1.5 VF [V] 101 0.1 1 1 t [s] Fig. 2 Surge overload current Fig. 1 Forward current versus voltage drop 2 3 4 5 6 7 8 910 t [ms] 2 Fig. 3 I t versus time 16 14 12 10 Ptot 8 [W] 20 DC = 1 0.5 0.4 0.33 0.17 0.08 15 IF(AV)M 6 1.0 K/W 2.0 K/W 4.0 K/W 8.0 K/W 10.0 K/W 12.0 K/W 4 2 DC = 1 0.5 0.4 0.33 0.17 0.08 [A] 10 RthHA = 5 0 0 0 2 4 6 8 10 12 0 25 50 IF(AV)M [A] 75 100 125 150 175 200 0 50 100 150 200 TC [°C] Tamb [°C] Fig. 5 Max. forward current vs. case temperature Fig. 4 Power dissipation versus direct output current and ambient temperature 2.0 Constants for ZthJC calculation: 1.5 i Rthi (K/W) ti (s) ZthJC 1 1.1 0.005 1.0 2 0.06 0.0003 3 0.14 0.045 4 0.2 0.2 5 0.5 0.05 [K/W] 0.5 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212d