DLA20IM800PC-TRL

DLA20IM800PC Low Voltage Standard Rectifier VRRM = 800 V I FAV = 20 A VF = 1.22 V Single Diode Part number DLA20IM800PC Marking on Product: DLA20IM800PC Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-263 (D2Pak) ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200317c DLA20IM800PC Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved max. Unit 900 V 800 V TVJ = 25°C 5 µA VR = 800 V TVJ = 150°C 0.05 mA TVJ = 25°C 1.25 V 1.49 V 1.22 V IF = 20 A IF = 40 A IF = 20 A IF = 40 A TVJ = 150 °C TC = 140 °C 1.54 V T VJ = 175 °C 20 A TVJ = 175 °C 0.88 V 17 mΩ d = 0.5 for power loss calculation only R thCH typ. VR = 800 V rectangular Ptot min. 1 K/W K/W 0.25 TC = 25°C 150 W t = 10 ms; (50 Hz), sine TVJ = 45°C 200 A t = 8,3 ms; (60 Hz), sine VR = 0 V 215 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 170 A t = 8,3 ms; (60 Hz), sine VR = 0 V 185 A t = 10 ms; (50 Hz), sine TVJ = 45°C 200 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 190 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 145 A²s 140 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 7 pF 20200317c DLA20IM800PC Package Ratings TO-263 (D2Pak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 max. 35 Unit A -55 175 °C -55 150 °C 150 °C 1.5 Weight FC 1) typ. 1) 20 mounting force with clip g 60 N IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. Product Marking Part description D L A 20 IM 800 PC XXXXXXXXX Part Number IXYS yywwZ Logo Date Code Location = = = = = = = Diode Low Voltage Standard Rectifier (up to 1200V) Current Rating [A] Single Diode Reverse Voltage [V] TO-263AB (D2Pak) (2) 123456 Lot# Ordering Standard Alternative Ordering Number DLA20IM800PC-TRL DLA20IM800PC-TUB Equivalent Circuits for Simulation I V0 R0 * on die level Delivery Mode Tape & Reel Tube Quantity 800 50 Code No. 506475 506628 T VJ = 175°C Rectifier V 0 max threshold voltage 0.88 R0 max slope resistance * 13 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Marking on Product DLA20IM800PC DLA20IM800PC V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20200317c DLA20IM800PC Outlines TO-263 (D2Pak) Dim. W A Supplier Option D1 L1 c2 A1 H D E A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 4 L L2 1 2 3 c 2x e 3x b2 10.92 (0.430) mm (Inches) 2x b E1 Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.098 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) 9.02 (0.355) W Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.5 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 2/4 Data according to IEC 60747and per semiconductor unless otherwise specified 20200317c DLA20IM800PC Rectifier 40 103 180 VR = 0 V 160 30 IF I2 t 140 IFSM 20 TVJ = 45°C TVJ = 150°C TVJ = 125°C TVJ = 25°C [A] 120 TVJ = 45°C 102 TVJ = 150°C TVJ = 150°C 2 [A s] [A] 10 100 0 0.5 1.0 50 Hz, 80% VRRM 80 0.001 0.01 1.5 VF [V] 101 0.1 1 1 t [s] Fig. 2 Surge overload current Fig. 1 Forward current versus voltage drop 2 3 4 5 6 7 8 910 t [ms] 2 Fig. 3 I t versus time 40 35 30 RthHA = DC = 1 0.5 0.4 0.33 0.17 0.08 25 20 Ptot 0.6 K/W 0.8 K/W 1.0 K/W 2.0 K/W 4.0 K/W 8.0 K/W 30 IF(AV)M 20 15 DC = 1 0.5 0.4 0.33 0.17 0.08 [A] [W] 10 10 5 0 0 0 4 8 12 16 20 24 0 25 50 IF(AV)M [A] 75 100 125 150 175 200 0 50 100 150 200 TC [°C] Tamb [°C] Fig. 5 Max. forward current vs. case temperature Fig. 4 Power dissipation versus direct output current and ambient temperature 1.0 Constants for ZthJC calculation: 0.8 ZthJC i Rthi (K/W) ti (s) 1 0.51 0.0035 0.6 2 0.06 0.0003 [K/W] 3 0.14 0.0250 0.4 4 0.09 0.8000 5 0.20 0.1400 0.2 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200317c