DLA40IM800PC-TRL

DLA40IM800PC High Efficiency Standard Rectifier VRRM = 800 V I FAV = 40 A VF = 1.26 V Single Diode Part number DLA40IM800PC Marking on Product: DLA40IM800PC Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-263 (D2Pak) ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212b DLA40IM800PC Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 900 V 800 V VR = 800 V TVJ = 25°C 10 µA VR = 800 V TVJ = 150°C 0.05 mA TVJ = 25°C 1.30 V 1.56 V 1.26 V IF = 40 A IF = 80 A IF = 40 A IF = 80 A TVJ = 150 °C TC = 120 °C 1.65 V T VJ = 175 °C 40 A TVJ = 175 °C 0.85 V 10 mΩ rectangular for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 0.8 K/W K/W 0.25 TC = 25°C 185 W t = 10 ms; (50 Hz), sine TVJ = 45°C 300 A t = 8,3 ms; (60 Hz), sine VR = 0 V 325 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 255 A t = 8,3 ms; (60 Hz), sine VR = 0 V 275 A t = 10 ms; (50 Hz), sine TVJ = 45°C 450 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 440 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 325 A²s 315 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 10 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20190212b DLA40IM800PC Package Ratings TO-263 (D2Pak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 max. 35 Unit A -55 175 °C -55 150 °C 150 °C 1.5 Weight FC 1) typ. 1) 20 mounting force with clip g 60 N IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. Product Marking Part description D L A 40 IM 800 PC XXXXXXXXX Part Number IXYS yywwZ Logo Date Code Location = = = = = = = Diode Low Voltage Standard Rectifier (up to 1200V) Current Rating [A] Single Diode Reverse Voltage [V] TO-263AB (D2Pak) (2) 123456 Lot# Ordering Standard Alternative Ordering Number DLA40IM800PC-TRL DLA40IM800PC-TUB Similar Part DSI30-08AS DSI30-12AS DSI30-16AS Equivalent Circuits for Simulation I V0 R0 Marking on Product DLA40IM800PC DLA40IM800PC Package TO-263AB (D2Pak) (2) TO-263AB (D2Pak) (2) TO-263AB (D2Pak) (2) * on die level Delivery Mode Tape & Reel Tube Code No. 509995 525085 Voltage class 800 1200 1600 T VJ = 175°C Rectifier V 0 max threshold voltage 0.85 V R0 max slope resistance * 6.8 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 800 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20190212b DLA40IM800PC Outlines TO-263 (D2Pak) Dim. W A Supplier Option D1 L1 c2 A1 H D E A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 4 L L2 1 2 3 c 2x e 3x b2 10.92 (0.430) mm (Inches) 2x b E1 Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.098 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) 9.02 (0.355) W Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.5 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 2/4 Data according to IEC 60747and per semiconductor unless otherwise specified 20190212b DLA40IM800PC Rectifier 80 103 260 VR = 0 V 50 Hz, 80% VRRM 240 60 220 IFSM IF I2t 200 40 [A] TVJ = 150°C TVJ = 125°C TVJ = 25°C [A] TVJ = 45°C 180 2 [A s] 160 20 TVJ = 45°C TVJ = 150°C TVJ = 150°C 102 140 0 0.5 1.0 120 0.001 1.5 VF [V] 0.01 0.1 1 1 t [s] Fig. 2 Surge overload current Fig. 1 Forward current versus voltage drop 2 3 4 5 6 7 8 910 t [ms] 2 Fig. 3 I t versus time 40 60 RthHA = DC = 1 0.5 0.4 0.33 0.17 0.08 40 Ptot 0.6 K/W 0.8 K/W 1.0 K/W 2.0 K/W 4.0 K/W 8.0 K/W 30 DC = 1 0.5 0.4 0.33 0.17 0.08 IF(AV)M 20 [A] [W] 20 10 0 0 0 10 20 30 40 50 0 25 50 IF(AV)M [A] 75 100 125 150 175 200 0 50 Tamb [°C] 100 150 200 TC [°C] Fig. 5 Max. forward current vs. case temperature Fig. 4 Power dissipation versus direct output current and ambient temperature 1.0 0.8 Constants for ZthJC calculation: ZthJC i Rthi (K/W) ti (s) 0.6 1 0.04 0.0004 2 0.07 0.002 3 0.19 0.003 4 0.35 0.024 5 0.15 0.25 [K/W] 0.4 0.2 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212b