DLA5P800UC

DLA5P800UC High Efficiency Standard Rectifier VRRM = 2x 800 V I FAV = 5A VF = 1.12 V Phase leg Part number DLA5P800UC Marking on Product: M5RLUP Backside: anode/cathode 1 2/4 3 Features / Advantages: Applications: Package: TO-252 (DPak) ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212c DLA5P800UC Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 900 V 800 V VR = 800 V TVJ = 25°C 5 µA VR = 800 V TVJ = 150°C 0.05 mA TVJ = 25°C 1.18 V 1.38 V 1.12 V IF = 5A IF = 10 A IF = 5A IF = 10 A TVJ = 150 °C TC = 155 °C 1.41 V T VJ = 175 °C 5 A TVJ = 175 °C 0.82 V 58 mΩ 180° sine for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 2.5 K/W 0.5 K/W TC = 25°C 60 W t = 10 ms; (50 Hz), sine TVJ = 45°C 70 A t = 8,3 ms; (60 Hz), sine VR = 0 V 76 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 60 A t = 8,3 ms; (60 Hz), sine VR = 0 V 64 A t = 10 ms; (50 Hz), sine TVJ = 45°C 25 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 24 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 18 A²s 17 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 1 pF 20190212c DLA5P800UC Package Ratings TO-252 (DPak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 max. 20 Unit A -55 175 °C -55 150 °C 150 °C 0.3 Weight FC typ. 20 mounting force with clip Product Marking Logo Part number Assembly Line 60 N Part description D L A 5 P 800 UC IXYS abcdefg Z YY g = = = = = = = Diode Low Voltage Standard Rectifier (up to 1200V) Current Rating [A] Phase leg Reverse Voltage [V] TO-252AA (DPak) WW Date Code Ordering Standard Alternative Ordering Number DLA5P800UC-TRL DLA5P800UC-TUB Equivalent Circuits for Simulation I V0 R0 * on die level Delivery Mode Tape & Reel Tube Quantity 2500 70 Code No. 511574 523442 T VJ = 175 °C Rectifier V 0 max threshold voltage 0.82 R0 max slope resistance * 55 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Marking on Product M5RLUP M5RLUP V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20190212c DLA5P800UC Outlines TO-252 (DPak) 1 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 2/4 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20190212c DLA5P800UC Rectifier 10 60 30 VR = 0 V 8 50 20 6 TVJ = 45°C IFSM 2 It TVJ = 45°C 40 IF 4 [A] TVJ = 150°C TVJ = 125°C TVJ = 25°C [A] 2 TVJ = 150°C [A s] TVJ = 150°C 10 30 2 0 0.5 1.0 50 Hz, 80% VRRM 20 0.001 0.01 1.5 VF [V] 0 0.1 1 1 t [s] Fig. 2 Surge overload current Fig. 1 Forward current versus voltage drop 2 3 4 5 6 7 8 910 t [ms] 2 Fig. 3 I t versus time 8 20 DC = 1 0.5 0.4 0.33 0.17 0.08 6 Ptot 15 RthHA = IF(AV)M 2.0 K/W 4.0 K/W 6.0 K/W 10.0 K/W 12.0 K/W 14.0 K/W 4 [W] DC = 1 0.5 0.4 0.33 0.17 0.08 [A] 10 2 5 0 0 0 2 4 0 6 25 50 IF(AV)M [A] 75 100 125 150 175 200 0 50 100 150 200 TC [°C] Tamb [°C] Fig. 5 Max. forward current vs. case temperature Fig. 4 Power dissipation versus direct output current and ambient temperature 3.0 2.5 Constants for ZthJC calculation: 2.0 i ZthJC Rthi (K/W) ti (s) 1.5 1 1.1 0.005 [K/W] 2 0.06 0.0003 1.0 3 0.2 0.045 4 0.4 0.2 5 0.74 0.05 0.5 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212c