DLA60I1200HA

DLA60I1200HA Low Voltage Standard Rectifier VRRM = 1200 V I FAV = 60 A VF = 1.1 V Single Diode Part number DLA60I1200HA Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129b DLA60I1200HA Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current VF forward voltage drop min. typ. 1200 TVJ = 25°C 30 µA VR = 1200 V TVJ = 150°C 0.3 mA IF = TVJ = 25°C 1.19 V 1.42 V 1.10 V IF = 60 A TVJ = 150 °C 60 A I F = 120 A average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 150 °C rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1.41 V T VJ = 175 °C 60 A TVJ = 175 °C 0.78 V 5.1 mΩ d = 0.5 for power loss calculation only Ptot V VR = 1200 V I F = 120 A I FAV max. Unit 1300 V 0.3 K/W K/W 0.3 TC = 25°C 500 W t = 10 ms; (50 Hz), sine TVJ = 45°C 850 A t = 8,3 ms; (60 Hz), sine VR = 0 V 920 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 725 A t = 8,3 ms; (60 Hz), sine VR = 0 V 780 A t = 10 ms; (50 Hz), sine TVJ = 45°C 3.62 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 3.52 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 2.63 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 2.53 kA²s 33 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20191129b DLA60I1200HA Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 70 Unit A -55 175 °C -55 150 °C 150 °C 6 Weight MD mounting torque FC mounting force with clip Product Marking 0.8 1.2 Nm 20 120 N Part description D L A 60 I 1200 HA IXYS Logo g = = = = = = = Diode Low Voltage Standard Rectifier (up to 1200V) Current Rating [A] Single Diode Reverse Voltage [V] TO-247AD (2) XXXXXXXXX Part Number Date Code yywwZ 1234 Lot# Location Ordering Standard Ordering Number DLA60I1200HA Equivalent Circuits for Simulation I V0 R0 Marking on Product DLA60I1200HA * on die level Delivery Mode Tube Code No. 508170 T VJ = 175°C Rectifier V 0 max threshold voltage 0.78 V R0 max slope resistance * 2.5 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20191129b DLA60I1200HA Outlines TO-247 A E A2 D2 Ø P1 ØP S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 2x b e C A1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.430 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 10.92 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20191129b DLA60I1200HA Rectifier 80 700 60 600 104 VR = 0 V TVJ = 45°C IFSM IF 40 I 2t TVJ = 45°C TVJ = 150°C TVJ = 125°C TVJ = 25°C [A] TVJ = 150°C 103 500 [A] 2 [A s] TVJ = 150°C 20 400 0 0.0 0.5 1.0 1.5 50 Hz, 80% VRRM 300 0.001 0.01 VF [V] 102 0.1 1 1 t [s] Fig. 2 Surge overload current Fig. 1 Forward current versus voltage drop per diode 2 3 4 5 6 7 8 910 t [ms] Fig. 3 I2t versus time per diode 90 80 RthHA = 80 0.6 K/W 0.8 K/W 1.0 K/W 2.0 K/W 4.0 K/W 8.0 K/W DC = 1 0.5 60 0.4 0.33 50 0.17 Ptot 0.08 70 DC = 1 0.5 0.4 0.33 0.17 0.08 60 IF(AV)M 40 40 [A] [W]30 20 20 10 0 0 0 10 20 30 40 50 60 70 0 25 50 IF(AV)M [A] 75 100 125 150 175 200 0 50 Tamb [°C] 100 150 200 TC [°C] Fig. 5 Max. forward current vs. case temperature Fig. 4 Power dissipation vs. direct output current and ambient temperature 0.3 Constants for ZthJC calculation: ZthJC i 0.2 [K/W] 0.1 Rthi (K/W) ti (s) 1 0.044 0.007 2 0.027 0.0001 3 0.029 0.02 4 0.05 0.37 5 0.15 0.15 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129b