DMA10I1600PA

DMA10I1600PA Standard Rectifier VRRM = 1600 V I FAV = 10 A VF = 1.21 V Single Diode Part number DMA10I1600PA Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191128c DMA10I1600PA Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved max. Unit 1700 V 1600 V TVJ = 25°C 10 µA VR = 1600 V TVJ = 150°C 0.2 mA TVJ = 25°C 1.26 V 1.53 V 1.21 V IF = 10 A IF = 20 A IF = 10 A IF = 20 A TVJ = 150 °C TC = 150 °C 1.57 V T VJ = 175 °C 10 A TVJ = 175 °C 0.82 V 37 mΩ d = 0.5 for power loss calculation only R thCH typ. VR = 1600 V rectangular Ptot min. 1.5 K/W K/W 0.5 TC = 25°C 100 W t = 10 ms; (50 Hz), sine TVJ = 45°C 120 A t = 8,3 ms; (60 Hz), sine VR = 0 V 130 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 100 A t = 8,3 ms; (60 Hz), sine VR = 0 V 110 A t = 10 ms; (50 Hz), sine TVJ = 45°C 72 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 70 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 50 A²s 50 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 4 pF 20191128c DMA10I1600PA Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 25 Unit A -55 175 °C -55 150 °C 150 °C 2 Weight MD mounting torque FC mounting force with clip Product Marking Part Number Logo Date Code Lot # g 0.4 0.6 Nm 20 60 N Part description D M A 10 I 1600 PA XXXXXX = = = = = = = Diode Standard Rectifier (up to 1800V) Current Rating [A] Single Diode Reverse Voltage [V] TO-220AC (2) yywwZ 123456 Location Ordering Standard Ordering Number DMA10I1600PA Similar Part DMA10IM1600PZ Equivalent Circuits for Simulation I V0 R0 Package TO-263AB (D2Pak) (2HV) * on die level Delivery Mode Tube Quantity 50 Code No. 508780 Voltage class 1600 T VJ = 175°C Rectifier V 0 max threshold voltage 0.82 R0 max slope resistance * 34 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Marking on Product DMA10I1600PA V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20191128c DMA10I1600PA Outlines TO-220 A = supplier option H1 ØP D 4 3 L1 1 L 2x b2 2x b C e A2 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 5.08 5.85 10.66 BSC 6.85 0.390 0.200 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A1 Q E Dim. 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20191128c DMA10I1600PA Rectifier 20 100 102 50 Hz, 80%VRRM VR = 0 V 15 TVJ = 45°C 80 IF TVJ = 45°C IFSM It [A] [A s] 2 10 [A] 2 TVJ = 150°C 60 5 TVJ = 150°C TVJ = 25°C TVJ = 125°C TVJ = 150°C 0 0.5 1.0 1.5 40 0.001 2.0 101 0.01 VF [V] 0.1 1 1 3 4 5 6 7 8 910 t [ms] Fig. 3 I2t versus time per diode Fig. 2 Surge overload current Fig. 1 Forward current versus voltage drop per diode 28 18 RthHA = 16 12 10 [W] 8 DC = 1 0.5 0.4 0.33 0.17 0.08 24 4 K/W 8 K/W 10 K/W 12 K/W 16 K/W 20 K/W DC = 1 0.5 0.4 0.33 0.17 0.08 14 Ptot 2 t [s] 20 IF(AV)M 16 [A] 12 6 8 4 4 2 0 0 0 2 4 6 8 10 12 0 50 IF(AV)M [A] 100 150 200 0 50 100 150 200 TC [°C] Tamb [°C] Fig. 4 Power dissipation vs. direct output current and ambient temperature Fig. 5 Max. forward current vs. case temperature 1.6 1.2 Constants for ZthJC calculation: ZthJC 0.8 [K/W] 0.4 i Rthi (K/W) ti (s) 1 0.155 0.0005 2 0.332 0.0095 3 0.713 0.17 4 0.3 0.8 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191128c