DMA150E1600NA

DMA150E1600NA Standard Rectifier VRRM = 1600 V I FAV = 150 A VF = 1.05 V Single Diode Part number DMA150E1600NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129b DMA150E1600NA Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1600 IR reverse current VR = 1600 V TVJ = 25°C 200 µA VR = 1600 V TVJ = 150°C 3.5 mA I F = 150 A TVJ = 25°C 1.15 V 1.36 V 1.05 V VF forward voltage drop min. typ. I F = 300 A TVJ = 125 °C I F = 150 A I F = 300 A I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 110 °C rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved V 1.33 V T VJ = 150 °C 150 A TVJ = 150 °C 0.78 V 1.8 mΩ d = 0.5 for power loss calculation only Ptot max. Unit 1700 V 0.2 K/W K/W 0.1 TC = 25°C 620 W t = 10 ms; (50 Hz), sine TVJ = 45°C 3.00 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 3.24 kA t = 10 ms; (50 Hz), sine TVJ = 150 °C 2.55 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 2.76 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 45.0 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 43.7 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 32.5 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 31.6 kA²s 60 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20191129b DMA150E1600NA Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 150 Unit A -40 150 °C -40 125 °C 150 °C 1) 30 Weight g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm d Spp/App d Spb/Apb VISOL 8.6 50/60 Hz, RMS; IISOL ≤ 1 mA 3.2 mm 6.8 mm 3000 V 2500 V IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. Product Marking Logo XXXXX ® yywwZ 1234 Date Code Location Ordering Standard V0 Part description Part Number UL D M A 150 E 1600 NA = = = = = = = Diode Standard Rectifier (up to 1800V) Current Rating [A] Single Diode Reverse Voltage [V] SOT-227B (minibloc) Lot# Ordering Number DMA150E1600NA Equivalent Circuits for Simulation I 10.5 t = 1 second isolation voltage t = 1 minute 1) terminal to terminal terminal to backside creepage distance on surface | striking distance through air R0 * on die level Delivery Mode Tube Quantity 10 Code No. 508942 T VJ = 150°C Rectifier V 0 max threshold voltage 0.78 R0 max slope resistance * 1 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Marking on Product DMA150E1600NA V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20191129b DMA150E1600NA Outlines SOT-227B (minibloc) IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 2 1 3 4 Data according to IEC 60747and per semiconductor unless otherwise specified 20191129b DMA150E1600NA Rectifier 300 2500 250 2250 200 105 50 Hz, 80%VRRM VR = 0 V 2000 TVJ = 150°C TVJ = 125°C TVJ = 25°C IF 150 IFSM 2 1750 [A] [A] [A2s] 100 1500 50 1250 0 0.5 It TVJ = 45°C 1.0 TVJ = 150°C TVJ = 150°C 104 1000 0.001 1.5 VF [V] TVJ = 45°C 0.01 0.1 1 1 t [s] Fig. 2 Surge overload current Fig. 1 Forward current versus voltage drop per diode 2 3 4 5 6 7 8 910 t [ms] 2 Fig. 3 I t versus time per diode 200 350 RthHA = 0.2 K/W 0.4 K/W 0.6 K/W 0.8 K/W 1.0 K/W 2.0 K/W DC = 1 0.5 0.4 0.33 0.17 0.08 160 P120 tot DC = 1 0.5 0.4 0.33 0.17 0.08 300 250 200 IF(AV)M 150 [W]80 [A] 100 40 50 0 0 0 20 40 60 80 100 120 140 160 0 25 50 IF(AV)M [A] 75 100 125 150 175 0 25 50 75 100 125 150 175 TC [°C] Tamb [°C] Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Max. forward current versus case temperature 0.20 0.16 Constants for ZthJC calculation: ZthJC i 0.12 [K/W] 0.08 0.04 Rthi (K/W) ti (s) 1 0.017 0.01 2 0.013 0.00001 3 0.010 0.01 4 0.04 0.04 5 0.12 0.3 0.00 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129b