DMA50P1200HR

DMA50P1200HR Standard Rectifier VRRM = 2x 1200 V I FAV = 50 A VF = 1.28 V Phase leg Part number DMA50P1200HR Backside: isolated 1 2 3 Features / Advantages: Applications: Package: ISO247 ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● High commutation robustness ● High surge capability ● Diode for main rectification ● For single and three phase bridge configurations ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Backside: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d DMA50P1200HR Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current VF forward voltage drop min. typ. 1200 TVJ = 25°C 40 µA VR = 1200 V TVJ = 150°C 1.5 mA IF = TVJ = 25°C 1.31 V 1.64 V 1.28 V IF = 50 A TVJ = 150 °C 50 A I F = 100 A average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case V VR = 1200 V I F = 100 A I FAV max. Unit 1300 V TC = 105 °C 1.70 V T VJ = 175 °C 50 A TVJ = 175 °C 0.82 V 9 mΩ 180° sine for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 0.7 K/W K/W 0.3 TC = 25°C 210 W t = 10 ms; (50 Hz), sine TVJ = 45°C 650 A t = 8,3 ms; (60 Hz), sine VR = 0 V 700 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 555 A t = 8,3 ms; (60 Hz), sine VR = 0 V 595 A t = 10 ms; (50 Hz), sine TVJ = 45°C 2.12 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 2.04 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 1.54 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 1.48 kA²s 18 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20191129d DMA50P1200HR Package Ratings ISO247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 70 Unit A -55 175 °C -55 150 °C 150 °C 6 Weight MD mounting torque FC mounting force with clip d Spp/App terminal to terminal creepage distance on surface | striking distance through air terminal to backside d Spb/Apb VISOL t = 1 second isolation voltage t = 1 minute Product Marking Logo IXYS Part Number XXXXXXXXX 50/60 Hz, RMS; IISOL ≤ 1 mA g 0.8 1.2 Nm 20 120 N 2.7 mm 4.1 mm 3600 V 3000 V Part description D M A 50 P 1200 HR = = = = = = = Diode Standard Rectifier (up to 1800V) Current Rating [A] Phase leg Reverse Voltage [V] ISO247 (3) yywwZ Date Code Lot# 123456 Location Ordering Standard Ordering Number DMA50P1200HR Similar Part DMA50P1200HB Equivalent Circuits for Simulation I V0 R0 Marking on Product DMA50P1200HR Package TO-247AD (3) * on die level Delivery Mode Tube Code No. 512335 Voltage class 1200 T VJ = 175°C Rectifier V 0 max threshold voltage 0.82 V R0 max slope resistance * 6.4 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d DMA50P1200HR Outlines ISO247 A E A2 A3 2x E3 ØP 2x D3 S Q D D1 2x E2 4 1 2 3 D2 L1 E1 L 2x b2 3x b C b4 A1 2x e 1 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Millimeter min max A 4.70 5.30 A1 2.21 2.59 A2 1.50 2.49 A3 typ. 0.05 b 0.99 1.40 b2 1.65 2.39 b4 2.59 3.43 c 0.38 0.89 D 20.79 21.45 D1 typ. 8.90 D2 typ. 2.90 D3 typ. 1.00 E 15.49 16.24 E1 typ. 13.45 E2 4.31 5.48 E3 typ. 4.00 e 5.46 BSC L 19.80 20.30 L1 4.49 Ø P 3.55 3.65 Q 5.38 6.19 S 6.14 BSC Dim. 2 Inches min max 0.185 0.209 0.087 0.102 0.059 0.098 typ. 0.002 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.819 0.844 typ. 0.350 typ. 0.114 typ. 0.039 0.610 0.639 typ. 0.530 0.170 0.216 typ. 0.157 0.215 BSC 0.780 0.799 0.177 0.140 0.144 0.212 0.244 0.242 BSC 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d DMA50P1200HR Rectifier 80 550 104 50 Hz, 80%VRRM VR = 0 V 500 60 450 IF IFSM 400 2 It TVJ = 45°C 40 TVJ = 45°C 103 [A] 350 [A] TVJ = 25°C 20 TVJ = 125°C TVJ = 150°C 2 [A s] TVJ = 150°C 300 TVJ = 150°C 250 0 0.0 0.5 1.0 1.5 2.0 200 0.001 102 0.01 VF [V] 0.1 1 1 2 3 t [s] Fig. 3 I2t versus time per diode Fig. 2 Surge overload current versus time per diode Fig. 1 Forward current versus voltage drop per diode 4 5 6 7 8 910 t [ms] 80 100 RthHA [K/W] 0.6 0.8 1.0 2.0 4.0 8.0 DC = 1 0.5 0.4 0.33 0.17 0.08 80 Ptot 60 DC = 1 0.5 0.4 0.33 0.17 0.08 60 IF(AV)M 40 [A] [W] 40 20 20 0 0 0 20 40 60 0 50 IF(AV)M [A] 100 0 150 50 100 150 200 TC [°C] Tamb [°C] Fig. 5 Max. forward current vs. case temperature per diode Fig. 4 Power dissipation versusdirect output current and ambient temperature per diode 0.8 0.6 Constants for ZthJC calculation: ZthJC i 0.4 [K/W] 0.2 Rthi (K/W) ti (s) 1 0.06 0.0004 2 0.12 0.0100 3 0.20 0.0240 4 0.20 0.1000 5 0.12 0.4500 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case versus time per diode IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d