DNA30E2200PA

DNA30E2200PA High Voltage Standard Rectifier VRRM = 2200 V I FAV = 30 A VF = 1.24 V Single Diode Part number DNA30E2200PA Backside: anode 1 3 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d DNA30E2200PA Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved max. Unit 2300 V 2200 V TVJ = 25°C 40 µA VR = 2200 V TVJ = 150°C 1.5 mA TVJ = 25°C 1.26 V 1.53 V 1.24 V IF = 30 A IF = 60 A IF = 30 A IF = 60 A TVJ = 150 °C TC = 140 °C 1.63 V T VJ = 175 °C 30 A TVJ = 175 °C 0.83 V 13.4 mΩ d = 0.5 for power loss calculation only R thCH typ. VR = 2200 V rectangular Ptot min. 0.7 K/W K/W 0.5 TC = 25°C 210 W t = 10 ms; (50 Hz), sine TVJ = 45°C 370 A t = 8,3 ms; (60 Hz), sine VR = 0 V 400 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 315 A t = 8,3 ms; (60 Hz), sine VR = 0 V 340 A t = 10 ms; (50 Hz), sine TVJ = 45°C 685 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 665 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 495 A²s 480 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 700 V; f = 1 MHz TVJ = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 7 pF 20191129d DNA30E2200PA Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 °C -55 150 °C 150 °C 2 Weight MD mounting torque FC mounting force with clip Product Marking Part Number Logo Date Code Lot # g 0.4 0.6 Nm 20 60 N Part description D N A 30 E 2200 PA XXXXXX = = = = = = = Diode High Voltage Standard Rectifier (>= 2000V) Current Rating [A] Single Diode Reverse Voltage [V] TO-220AC (2) yywwZ 123456 Location Ordering Standard Ordering Number DNA30E2200PA Similar Part DNA30E2200PZ DNA30EM2200PZ DNA30E2200FE DNA30E2200IY Equivalent Circuits for Simulation I V0 R0 Marking on Product DNA30E2200PA Package TO-263AB (D2Pak) (2HV) TO-263AB (D2Pak) (2HV) i4-Pac (2HV) TO-262 (2HV) (I2PAK) * on die level Delivery Mode Tube Code No. 507762 Voltage class 2200 2200 2200 2200 T VJ = 175°C Rectifier V 0 max threshold voltage 0.83 V R0 max slope resistance * 10.2 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d DNA30E2200PA Outlines TO-220 A = supplier option H1 ØP D 4 3 L1 1 L 2x b2 2x b C e A2 1 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 5.08 5.85 10.66 BSC 6.85 0.390 0.200 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A1 Q E Dim. 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d DNA30E2200PA Rectifier 60 300 40 250 103 VR = 0 V TVJ = 45°C IF IFSM [A] [A] 20 TVJ = 45°C 2 It 200 TVJ = 150°C TVJ = 125°C TVJ = 25°C 0 0.5 1.0 [A2s] TVJ = 150°C TVJ = 150°C 50 Hz, 80% VRRM 1.5 2.0 102 150 0.001 VF [V] 0.01 0.1 1 1 t [s] Fig. 2 Surge overload current Fig. 1 Forward current versus voltage drop per diode 2 3 4 5 6 7 8 910 t [ms] 2 Fig. 3 I t versus time per diode 50 40 RthKA = 40 0.6 K/W 0.8 K/W 1.0 K/W 2.0 K/W 4.0 K/W 8.0 K/W dc = 1 0.5 0.4 0.33 0.17 0.08 30 Ptot 30 dc = 1 0.5 0.4 0.33 0.17 0.08 IF(AV)M 20 [A] 20 [W] 10 10 0 0 0 10 20 30 0 25 50 IF(AV)M [A] 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200 Tamb [°C] TC [°C] Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Max. forward current versus case temperature 0.8 0.6 Constants for ZthJC calculation: ZthJC i Rthi (K/W) 1 0.03 0.4 [K/W] 0.2 ti (s) 0.0003 2 0.072 0.0065 3 0.131 0.027 4 0.367 0.105 5 0.1 0.8 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d