DNA30E2200PC-TUB

DNA30E2200PC High Voltage Standard Rectifier VRRM = 2200 V I FAV = 30 A VF = 1.24 V Single Diode Part number DNA30E2200PC Backside: anode 1 3 Features / Advantages: Applications: Package: TO-263 (D2Pak) ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Recommended replacement: DNA30E2200PZ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130123d DNA30E2200PC Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 2300 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 2200 V IR reverse current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case VR = 2200 V TVJ = 25°C 40 µA TVJ = 150°C 1.5 mA TVJ = 25°C 1.26 V 1.53 V 1.24 V 30 A IF = 60 A IF = 30 A IF = 60 A TVJ = 150 °C TC = 140°C rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 1.63 V T VJ = 175 °C 30 A TVJ = 175 °C 0.83 V d = 0.5 for power loss calculation only Ptot typ. VR = 2200 V IF = forward voltage drop min. 13.4 mΩ 0.7 K/W K/W 0.25 TC = 25°C 210 W t = 10 ms; (50 Hz), sine TVJ = 45°C 370 A t = 8,3 ms; (60 Hz), sine VR = 0 V 400 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 315 A t = 8,3 ms; (60 Hz), sine VR = 0 V 340 A t = 10 ms; (50 Hz), sine TVJ = 45°C 685 A²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 665 A²s TVJ = 150 °C 495 A²s 480 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 700 V; f = 1 MHz TVJ = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 7 pF 20130123d DNA30E2200PC Package Ratings TO-263 (D2Pak) Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 35 Unit A -55 150 °C -55 175 °C Weight 2 FC 20 mounting force with clip Product Marking D N A 30 E 2200 PC IXYS yyww z Logo Date Code Assembly Line 60 N Part number XXXXXXXXX Part No. g = = = = = = = Diode High Voltage Standard Rectifier (>= 2000V) Current Rating [A] Single Diode Reverse Voltage [V] TO-263AB (D2Pak) (2) 000000 Assembly Code Ordering Standard Alternative Part Number DNA30E2200PC DNA30E2200PC-TUB Similar Part DNA30EM2200PC DNA30E2200PA DNA30E2200FE DNA30E2200IY Equivalent Circuits for Simulation I V0 R0 Marking on Product DNA30E2200PC DNA30E2200PC Package TO-263AB (D2Pak) (2) TO-220AC (2) i4-Pac (2HV) TO-262 (2HV) (I2PAK) * on die level Delivery Mode Tape & Reel Tube Code No. 510322 509374 Voltage class 2200 2200 2200 2200 T VJ = 175 °C Rectifier V 0 max threshold voltage 0.83 V R 0 max slope resistance * 10.2 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Quantity 800 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20130123d DNA30E2200PC Outlines TO-263 (D2Pak) Dim. L1 c2 Supplier Option A1 H D E A D1 W 4 L L2 1 2 3 c 2x e 3x b2 10.92 (0.430) E1 W Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.098 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) 9.02 (0.355) mm (Inches) 2x b A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.5 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 1 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20130123d DNA30E2200PC Rectifier 60 103 300 VR = 0 V TVJ = 45°C 40 250 IF IFSM [A] [A] 20 TVJ = 45°C 2 It 2 200 TVJ = 150°C TVJ = 125°C TVJ = 25°C 0 0.5 1.0 [A s] TVJ = 150°C TVJ = 150°C 50 Hz, 80% VRRM 1.5 2.0 102 150 0.001 VF [V] 0.01 0.1 1 1 t [s] Fig. 2 Surge overload current Fig. 1 Forward current versus voltage drop per diode 2 3 4 5 6 7 8 910 t [ms] 2 Fig. 3 I t versus time per diode 40 50 RthKA = 40 0.6 K/W 0.8 K/W 1.0 K/W 2.0 K/W 4.0 K/W 8.0 K/W dc = 1 0.5 0.4 0.33 0.17 0.08 30 Ptot 30 dc = 1 0.5 0.4 0.33 0.17 0.08 IF(AV)M 20 [A] 20 [W] 10 10 0 0 0 10 20 30 0 25 50 IF(AV)M [A] 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200 TC [°C] Tamb [°C] Fig. 4 Power dissipation vs. direct output current & ambient temperature Fig. 5 Max. forward current versus case temperature 0.8 0.6 Constants for ZthJC calculation: ZthJC i Rthi (K/W) 1 0.03 0.4 [K/W] 0.2 ti (s) 0.0003 2 0.072 0.0065 3 0.131 0.027 4 0.367 0.105 5 0.1 0.8 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130123d